Abstract: A Schottky barrier diode includes a semiconductor layer of a first conductivity type including a wide-bandgap semiconductor and a trench defining a mesa portion on a first surface thereof, a high-resistance region under the trench of the semiconductor layer, the high-resistance region including an impurity of a second conductivity type different from the first conductivity type, an insulating film or a semiconductor film of the second conductivity type, the insulating film or semiconductor film covering at least a bottom surface among inner surfaces of the trench, an anode electrode on the semiconductor layer through the insulating film or the semiconductor film, the anode electrode being connected to the mesa portion, and a cathode electrode directly or through another layer on a second surface of the semiconductor layer on the opposite side to the first surface.

Abstract: A Schottky barrier diode includes a semiconductor layer including a Ga2O3-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.

Abstract: A solder alloy includes 45 mass % or more and 63 mass % or less of Bi, 0.1 mass % or more and less than 0.7 mass % of Sb, 0.05 mass % or more and 1 mass % or less of In, and a balance including Sn.

Abstract: A high-side driver circuit is a circuit that drives a power semiconductor switch. The high-side driver circuit comprises a main switch N-channel MOSFET that has a drain terminal that is connected to a plus-side Vdc of a power supply and has a source terminal that is connected to an OUT terminal for a signal that drives the power semiconductor switch, a charge storage circuit that stores charge from the Vdc, and a voltage detection-capable switch that detects the voltage difference between an output terminal of the charge storage circuit and the Vdc and, upon detecting that the output terminal voltage of the charge storage circuit is at least a specific voltage higher than the voltage of a plus-side Vcc of the power supply, applies part or all of the output voltage of the charge storage circuit to a gate terminal of the main switch N-channel MOSFET.

Abstract: A reactor capable of suppressing a deformation of a resin material in a gap between partial cores is provided. This reactor includes: a core that includes T-shaped cores which are at least a pair of partial cores disposed via the gap therebetween; a coil attached to respective parts of the T-shaped cores; and a core casing that is a core molding member which is formed integrally by a resin material and which covers the T-shaped cores. The core casing includes the coupling portion that is provided between the T-shaped cores at a location corresponding to the gap, and the coupling portion is provided with a through-hole, and a pair of connection portions which face with each other across the through-hole and which connects a space between the T-shaped cores.

Abstract: A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer. The n-type semiconductor layer further includes a guard ring surrounding a junction with the anode electrode.

Abstract: A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer.

Abstract: A wavelength conversion member includes a support, and a wavelength conversion layer that includes a phosphor particle group and a sealing member to seal the phosphor particle group and that is provided directly or through an other layer on the support. A predetermined region, in which a cross-sectional area rate of the phosphor particle group is not less than 50%, is included in an arbitrary cross section of the wavelength conversion layer taken parallel to a thickness direction thereof. The predetermined region includes a rectangular region with a width of 700 ?m and a thickness of 50 ?m from a bottom surface of the wavelength conversion layer when a thickness of the wavelength conversion layer is not less than 50 ?m, or a rectangular region with a width of 700 ?m and a thickness equal to the thickness of the wavelength conversion layer when it is less than 50 ?m.

Abstract: A solder composition of the invention contains: a flux composition containing (A) a rosin resin, (B) an activator, (C) an imidazoline compound having a phenyl group, and (D) an antioxidant; and (E) solder powder, in which the (B) component contains (B1) an organic acid, the (B1) component contains at least one selected from the group consisting of (B11) 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, and 1,4-dihydroxy-2-naphthoic acid, and the (C) component is at least one selected from the group consisting of 2-phenylimidazoline and 2-benzylimidazoline.

Abstract: Downsized and weight reduced reactor is provided. An annular core 3 includes a first leg 31 and a second leg 32 to which a coil 2 is mounted and which generates magnetic flux, and a pair of yokes 33 which form a closed magnetic path together with the legs. Recess portions 35a is formed at four corners of the annular core 3, and a part of the end surfaces 31a and 32a of the legs which is a magnetic flux generating part or an end surface of the magnetic flux generating part is exposed from the recess portion 35a.

Abstract: A lead-free solder alloy includes 2.0% by mass or more and 4.0% by mass or less of Ag, 0.3% by mass or more and 0.7% by mass or less of Cu, 1.2% by mass or more and 2.0% by mass or less of Bi, 0.5% by mass or more and 2.1% by mass or less of In, 3.0% by mass or more and 4.0% by mass or less of Sb, 0.001% by mass or more and 0.05% by mass or less of Ni, 0.001% by mass or more and 0.01% by mass or less of Co, and the balance being Sn.

Abstract: A lead-free solder alloy includes 2.0% by mass or more and 4.0% by mass or less of Ag, 0.3% by mass or more and 0.7% by mass or less of Cu, 1.2% by mass or more and 2.0% by mass or less of Bi, 0.5% by mass or more and 2.1% by mass or less of In, 3.0% by mass or more and 4.0% by mass or less of Sb, 0.001% by mass or more and 0.05% by mass or less of Ni, 0.001% by mass or more and 0.01% by mass or less of Co, and the balance being Sn.

Abstract: A field-effect transistor includes an n-type semiconductor layer that includes a Ga2O3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.

Abstract: A solder alloy includes 1.1% by mass or more and 8% by mass or less of Cu; 6% by mass or more and 20% by mass or less of Sb; 0.01% by mass or more and 0.5% by mass or less of Ni; and 0.001% by mass or more and 1% by mass or less of Co; a balance being Sn. An amount of Cu (% by mass) and an amount of Ni (% by mass) satisfies following formula: the amount of Ni/(the amount of Cu+the amount of Ni)<0.10.

Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.

Abstract: Molded solder includes first metal powder and second metal powder. The first metal powder has a first solidus temperature and a first liquidus temperature and includes an alloy containing metal elements. The second metal powder has a melting temperature or a second solidus temperature and a second liquidus temperature and includes single metal element or an alloy containing metal elements. The melting temperature and the second liquidus temperature are higher than the first liquidus temperature. The molded solder is so constructed that a mixture of the first metal powder and the second metal powder are press-molded. The molded solder is so constructed that a first solidus temperature of a solder becomes higher when the molded solder becomes the solder after the first metal powder has been melted by heating the molded solder at a temperature equal to or higher than the first liquidus temperature.

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

Abstract: A field-effect transistor includes an n-type semiconductor layer that includes a Ga2O3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.