Abstract: A gas purifying apparatus has: a compressing unit for corn pressing a gas in which an atmosphere or inert gas and a substance vaporized by heating have been mixed; and an expanding unit for liquefying the substance by expanding the gas compressed by the compressing unit, wherein the gas in which the substance has been reduced is obtained.

Abstract: The present disclosure provides a photosensitive dry film enabling a photocured film being excellent in insulation reliability and resolution and having a frosted appearance to be obtained. A photosensitive dry film including a support film having a first main surface and a second main surface opposite to the first main surface, and a photosensitive resin layer provided on the first main surface, in which the first main surface has an irregular surface formed by chemical etching.

Abstract: A semiconductor device includes a semiconductor layer including a Ga2O3-based single crystal, and an electrode that is in contact with a surface of the semiconductor layer. The semiconductor layer is in Schottky-contact with the electrode and has an electron carrier concentration based on reverse withstand voltage and electric field-breakdown strength of the Ga2O3-based single crystal.

Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.

Abstract: A current sensor 100 includes: a magnetic core 104 which focuses a magnetic field generated by continuity of a current to be sensed IP; an element 108 which outputs a sensing signal according to an intensity of the magnetic field focused by the magnetic core 104; a circuit 116 which applies a feedback current to a winding 118 based on the sensing signal from the element 108 and balances magnetism; and a coupling circuit 124 which couples supply paths 123, 124 of a power supply 122 to the circuit 116 and an application path 117 of a feedback current to the winding 118 via capacitors C1, C2.

Abstract: As one embodiment, the present invention provides a method for growing a ?-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a ?-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.

Abstract: A reactor includes a reactor main body that includes a core and a coil attached to the core, a casing that houses therein the reactor main body and has a portion where an opening is formed, a terminal stage that supports the portion of a conductor electrically connected to the coil, and a shielding member that is integrally formed with the terminal stage and suppresses the leakage of magnetic fluxes from the reactor main body while maintaining the opening opened.

Abstract: Provided is a Ga2O3-based single crystal substrate capable of achieving a high processing yield. A Ga2O3-based single crystal substrate having a crack density of less than 0.05 cracks/cm can be obtained that has as a principal surface thereof a surface rotated 10-150° from the (100) plane, when a rotation direction from the (100) plane to the (001) plane via the (101) plane is defined as positive, having the [010] axis as the rotation axis.

Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering an inner surface of the trench, and a trench MOS gate that is buried in the trench so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes a lower layer on a side of the first semiconductor layer and an upper layer on a side of the anode electrode having a higher donor concentration than the lower layer.

Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.

Abstract: Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.

Abstract: A reactor includes: a reactor body having a core; and an installation destination object on which the reactor body is mounted; wherein the reactor body has three fixing portions for fixing the reactor body to the installation destination object, the installation destination object has mount portions for mounting the fixing portions, and the reactor body is fixed to the installation destination object by the fixing portions being mounted on the mount portions.

Abstract: A Schottky barrier diode includes a semiconductor layer including a Ga2O3-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.

Abstract: Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.

Abstract: Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (Y1-x-y-zLuxGdyCez)3+aAl5?aO12 (0?x?0.9994, 0?y?0.0669, 0.001?z?0.004, ?0.016?a?0.315) and a particle diameter (D50) of not less than 20 ?m. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.

Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.

Abstract: A light emitting device includes a laser diode that emits a blue light, and a wavelength conversion part that absorbs a part of light emitted from the laser diode and converts a wavelength thereof. The wavelength conversion part includes a YAG-based single crystal phosphor. Irradiance of light emitted from the laser diode and irradiated on the wavelength conversion part is not less than 80 W/mm2.

Abstract: A current sensor includes core components that form a magnetic circuit and form a space where to dispose a probe coil on the magnetic circuit; and a clip that press-joins the core components with each other. Since magnetic reluctance decreases at a portion where the core components are press-joined by the clip, an amount of magnetic flux of an external magnetic field passing through this portion increases, and accordingly, an amount of magnetic flux interlinked with the probe coil decreases. This improves the immunity of the current sensor to an external magnetic field.