Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

Abstract: A field-effect transistor includes an n-type semiconductor layer that includes a Ga2O3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.

Abstract: A semiconductor device includes a lead frame including a raised portion on a surface, and a semiconductor element that is face-down mounted on the lead frame and includes a substrate including a Ga2O3-based semiconductor, an epitaxial layer including a Ga2O3-based semiconductor and stacked on the substrate, a first electrode connected to a surface of the substrate on an opposite side to the epitaxial layer, and a second electrode connected to a surface of the epitaxial layer on an opposite side to the substrate and including a field plate portion at an outer peripheral portion. The semiconductor element is fixed onto the raised portion. An outer peripheral portion of the epitaxial layer, which is located on the outer side of the field plate portion, is located directly above a flat portion of the lead frame that is a portion at which the raised portion is not provided.

Abstract: A method for manufacturing a semiconductor element includes preparing a semiconductor wafer that includes a substrate including a Ga2O3-based semiconductor and an epitaxial layer including a Ga2O3-based semiconductor and located on the substrate, fixing the epitaxial layer side of the semiconductor wafer to a support substrate, thinning the substrate of the semiconductor wafer fixed to the support substrate, after the thinning of the substrate, forming an electrode on a lower surface of the substrate, bonding or forming a support metal layer on a lower surface of the electrode of the semiconductor wafer, and dicing the semiconductor wafer into individual pieces, thereby obtaining plural semiconductor elements each including the support metal layer. Thermal conductivity of the support metal layer is higher than thermal conductivity of the substrate.

Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.

Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has an outer peripheral trench surrounding the anode electrode in a plan view. The surface of the drift layer positioned between the anode electrode and the outer peripheral trench is covered with a semiconductor layer having a conductivity type opposite to that of the drift layer.

Abstract: Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (Y1-x-y-zLuxGdyCez)3+aAl5?aO12 (0?x?0.9994, 0?y?0.0669, 0.001?z?0.004, ?0.016?a?0.315) and a particle diameter (D50) of not less than 20 ?m. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.

Abstract: A gate driver includes: driver boards mountable on an IGBT module which is a driving-target external device; gate driver circuits which are formed on the driver boards and each apply a drive signal generated using power and a signal which are externally input through an input connector, to semiconductor elements of the IGBT module; and an insulating surrounding member disposed to surround a peripheral edge of the input-side driver board.

Abstract: An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.

Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 ?m in a region including the inner surface of the trench.

Abstract: A drive circuit is provided. When the switching element is in turn-on state and a collector-emitter voltage of the switching element is equal to or higher than a first predetermined voltage value, the first diode is turned on; the first transistor and the second transistor are turned on; and, after a mask time in which a first capacitor is started to be charged with a current from a current source and a voltage value at two ends becomes equal to or higher than a second predetermined voltage value higher than the first predetermined voltage value, an abnormality detection signal is output to the control unit. The control unit stops an output of the pulse signal to the switching element in response to the abnormality detection signal.

Abstract: A wavelength conversion member includes a sintered body of a phosphor. An average diameter of pores in an arbitrary cross section falls within a range of not less than 0.28 ?m and not more than 0.98 ?m. A ratio of an area of pores to a whole area in an arbitrary cross section falls within a range of not less than 0.04% and not more than 2.7%. An average diameter of grains of the phosphor in an arbitrary cross section falls within a range of not less than 1 ?m and not more than 3 ?m.

Abstract: A high-side driver circuit is a circuit that drives a power semiconductor switch. The high-side driver circuit comprises a main switch N-channel MOSFET that has a drain terminal that is connected to a plus-side Vdc of a power supply and has a source terminal that is connected to an OUT terminal for a signal that drives the power semiconductor switch, a charge storage circuit that stores charge from the Vdc, and a voltage detection-capable switch that detects the voltage difference between an output terminal of the charge storage circuit and the Vdc and, upon detecting that the output terminal voltage of the charge storage circuit is at least a specific voltage higher than the voltage of a plus-side Vcc of the power supply, applies part or all of the output voltage of the charge storage circuit to a gate terminal of the main switch N-channel MOSFET.

Abstract: An electronic component 100 includes: a circuit board module 104 which is composed of a plurality of layers, and in which a primary circuit 120 and secondary circuits 122, 124 are each formed using wring patterns of a first layer L1 to an eighth layer L8; and a magnetic core 106 which magnetically couples the primary circuit 120 and the secondary circuits 122, 124. The circuit board module 104 includes: a primary winding 120b and secondary windings 122b, 124b which are formed spirally around the magnetic core 106; and a third layer L3 and a sixth layer L6 interposed between a fourth layer L4 of the primary winding 120b and a second layer L2 of the secondary winding 122b and between a fifth layer L5 of the primary winding 120b and a seventh layer L7 of the secondary winding 124b.

Abstract: A diode includes an n-type semiconductor layer including an n-type Ga2O3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.

Abstract: A small size reactor that effectively utilizes a space is provided. This reactor includes: a reactor body which includes a core and a coil attached to the core, a casing which houses therein the reactor body and which has an opening where a part of the reactor body protrudes outwardly, a bus bar which is a conductive component electrically connected to the coil and which covers a part of a side of the reactor body protruding from the opening, and a terminal stage which includes an extended portion formed of a resin material where a part of the bus bar is embedded and provided along an edge of the opening, and which supports an electrical connection portion between the bus bar and an exterior.

Abstract: A reactor includes: a reactor main body including a core formed of a powder magnetic core, a resin member covering the circumference of the core, and a coil wound around the outer circumference of the resin member; a casing which includes a bottom surface and a side wall standing upright therefrom, and which houses therein the reactor main body; and a filler molding portion formed of a cured filler, and fastening the reactor main body to the casing. The resin member is provided with a bottom opening provided in an end surface that faces the bottom surface of the casing and exposing the core, and a back-side opening provided in an end surface orthogonal to the winding direction of the coil and facing the side wall, and exposing the core. The back-side opening is provided with exposing portions which is not covered with the filler molding portion and is exposed.

Abstract: A gas purifying apparatus has: a compressing unit for compressing a gas in which an atmosphere or inert gas and a substance vaporized by heating have been mixed; and an expanding unit for liquefying the substance by expanding the gas compressed by the compressing unit, wherein the gas in which the substance has been reduced is obtained

Abstract: Provided are a core and coil molding structure and a manufacturing method thereof which are capable of eliminating a void between coil layers to prevent foreign materials from entering therein, and which improve the vibration resistance and shock resistance of a reactor. A core and coil molding structure includes a coil that is a rectangular coil, a core yoke member in a block shape, and a resin member molding at least a part of those. The presence of a positioning member in a pin shape which positions the coil within a mold forms a groove in the inner circumference of the coil in the resin member.

Abstract: A terminal block includes a terminal and a base having a terminal attachment part to which the terminal is attached. The terminal includes a coupling part coupled to the terminal attachment part. The terminal attachment part is formed with an insertion hole extending in a first direction and into which the coupling part is inserted, and a fitting hole communicating with the insertion hole. The coupling part includes a click part configured to fit into the fitting hole, and the click part projects toward the fitting hole by being bent at a root of the click part along a straight line substantially parallel to the first direction.