Abstract: Molded solder includes first metal powder and second metal powder. The first metal powder has a first solidus temperature and a first liquidus temperature and includes an alloy containing metal elements. The second metal powder has a melting temperature or a second solidus temperature and a second liquidus temperature and includes single metal element or an alloy containing metal elements. The melting temperature and the second liquidus temperature are higher than the first liquidus temperature. The molded solder is so constructed that a mixture of the first metal powder and the second metal powder are press-molded. The molded solder is so constructed that a first solidus temperature of a solder becomes higher when the molded solder becomes the solder after the first metal powder has been melted by heating the molded solder at a temperature equal to or higher than the first liquidus temperature.

Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.

Abstract: A semiconductor device includes a semiconductor layer including a Ga2O3-based single crystal, and an electrode that is in contact with a surface of the semiconductor layer. The semiconductor layer is in Schottky-contact with the electrode and has an electron carrier concentration based on reverse withstand voltage and electric field-breakdown strength of the Ga2O3-based single crystal.

Abstract: A current sensor 100 includes: a magnetic core 104 which focuses a magnetic field generated by continuity of a current to be sensed IP; an element 108 which outputs a sensing signal according to an intensity of the magnetic field focused by the magnetic core 104; a circuit 116 which applies a feedback current to a winding 118 based on the sensing signal from the element 108 and balances magnetism; and a coupling circuit 124 which couples supply paths 123, 124 of a power supply 122 to the circuit 116 and an application path 117 of a feedback current to the winding 118 via capacitors C1, C2.

Abstract: An electronic component 100 includes: a circuit board module 104 which is composed of a plurality of layers, and in which a primary circuit 120 and secondary circuits 122, 124 are each formed using wring patterns of a first layer L1 to an eighth layer L8; and a magnetic core 106 which magnetically couples the primary circuit 120 and the secondary circuits 122, 124. The circuit board module 104 includes: cutout portions 104b which are formed in a cutout shape from side edge portions toward an inner side and which position the magnetic core 106 at a predetermined attachment position in a state of housing the magnetic core 106; and widened portions 104c which continue from the cutout portions 104b and are formed in a cutout shape from the side edge portions toward the inner side of the circuit board module 104, and which are formed on sides of the magnetic core 106 so as to be larger than a width W1 for housing of the cutout portions 104b.

Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering an inner surface of the trench, and a trench MOS gate that is buried in the trench so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes a lower layer on a side of the first semiconductor layer and an upper layer on a side of the anode electrode having a higher donor concentration than the lower layer.

Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.

Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.

Abstract: An electronic component 100 includes: a circuit board module 104 which is composed of a plurality of layers, and in which a primary circuit 120 and secondary circuits 122, 124 are each formed using wring patterns of a first layer L1 to an eighth layer L8; and a magnetic core 106 which magnetically couples the primary circuit 120 and the secondary circuits 122, 124. The circuit board module 104 includes: cutout portions 104b which are formed in a cutout shape from side edge portions toward an inner side and which position the magnetic core 106 at a predetermined attachment position in a state of housing the magnetic core 106; and widened portions 104c which continue from the cutout portions 104b and are formed in a cutout shape from the side edge portions toward the inner side of the circuit board module 104, and which are formed on sides of the magnetic core 106 so as to be larger than a width W1 for housing of the cutout portions 104b.

Abstract: An electronic component 100 includes: a circuit board module 104 which is composed of a plurality of layers, and in which a primary circuit 120 and secondary circuits 122, 124 are each formed using wring patterns of a first layer L1 to an eighth layer L8; and a magnetic core 106 which magnetically couples the primary circuit 120 and the secondary circuits 122, 124. The circuit board module 104 includes: a primary winding 120b and secondary windings 122b, 124b which are formed spirally around the magnetic core 106; and a third layer L3 and a sixth layer L6 interposed between a fourth layer L4 of the primary winding 120b and a second layer L2 of the secondary winding 122b and between a fifth layer L5 of the primary winding 120b and a seventh layer L7 of the secondary winding 124b.

Abstract: Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.

Abstract: An annular core includes an upper core and a lower core. A coil is attached to the leg of the annular core in a way that the winding axis is aligned in the vertical direction. The surface of the upper core is covered by an upper cover formed of resin. The surface of the lower core is covered by the lower cover formed of resin. A casing formed of metal includes a bottom plate having an opening, and a side wall integrated with the bottom plate, and the lower core, the coil, and the upper core are housed in the casing. A part of the lower cover is exposed via the opening of the casing. A filler resin is filled in a gap between the circumference of the annular core and the coil, and the side wall of the casing or the lower cover.

Abstract: A lead-free solder alloy includes 1% by weight or more and 4% by weight or less of Ag, 1% by weight or less of Cu, 3% by weight or more and 5% by weight or less of Sb, 0.01% by weight or more and 0.25% by weight or less of Ni, and Sn.

Abstract: A solder composition of the invention includes: a flux composition containing a component (A) in a form of a rosin-based resin, a component (B) in a form of an activator, a component (C) in a form of a solvent and a component (D) in a form of a thixotropic agent; and a component (E) in a form of a solder powder. The component (C) in a form of the solvent contains a component (C1) in a form of a isobornyl cyclohexanol and a component (C2) in a form of a solvent whose viscosity at 20 degrees C. is 10 mPa·s or less and whose boiling point ranges from 220 degrees C. to 245 degrees C.

Abstract: A reactor includes: a reactor body having a core; and an installation destination object on which the reactor body is mounted; wherein the reactor body has three fixing portions for fixing the reactor body to the installation destination object, the installation destination object has mount portions for mounting the fixing portions, and the reactor body is fixed to the installation destination object by the fixing portions being mounted on the mount portions.

Abstract: A reactor is provided which can be reduced in size, can prevent falling off of the temperature sensor and can make accurate temperature detection. The reactor comprises: an annular core 10; a resin member 20 covering a periphery of the annual core 10; a coil 5 attached to an outer circumference of the resin member 20; and a temperature sensor 9 inserted into a gap between the resin member 20 and the coil 5. The temperature sensor 9 has a columnar temperature detection portion 9a, and at least a part of the temperature detection portion 9a is sandwiched by the resin member 20 and the coil 5 in close contact.

Abstract: A reactor coil includes first and second coil elements each formed by edgewise and rectangular winding of one piece of rectangular wire rod in a manner in which the wound rectangular wire rod is stacked rectangularly and cylindrically and, at a winding terminating end point of the first coil element, the rectangular wire rod is bent approximately 90 degrees in a direction opposite to the winding direction of the first coil element so that the rectangular wire rod is stacked in a direction opposite to the stacking direction of the first coil element and is wound edgewisely and rectangularly in a direction opposite to the winding direction of the first coil element to form the second coil element and, as a result, the first coil element and second coil element are aligned in parallel to each other in a continuous state.

Abstract: A gas purifying apparatus has: a compressing unit for corn pressing a gas in which an atmosphere or inert gas and a substance vaporized by heating have been mixed; and an expanding unit for liquefying the substance by expanding the gas compressed by the compressing unit, wherein the gas in which the substance has been reduced is obtained

Abstract: A method of growing a conductive Ga2O3-based crystal film by MBE includes producing a Ga vapor and a Si-containing vapor and supplying the vapors as molecular beams onto a surface of a Ga2O3-based crystal substrate so as to grow the Ga2O3-based crystal film. The Ga2O3-based crystal film includes a Si-containing Ga2O3-based single crystal film. The Si-containing vapor is produced by heating Si or a Si compound and Ga while allowing the Si or a Si compound to contact with the Ga.

Abstract: A lead-free solder alloy includes 1 mass % or more and 4 mass % or less of Ag, 0.1 mass % or more and 1 mass % or less of Cu, 1.5 mass % or more and 5 mass % or less of Sb, 1 mass % or more and 6 mass % or less of In, and Sn.