Abstract: A method, system, apparatus, and/or device to creating a set of miniaturized electrode pillars. The method, system, apparatus, and/or device may include patterning a set of miniaturized electrode pillars on a substrate and coating the set of miniaturized electrode pillars with an interstitial filler disposed between the set of miniaturized electrode pillars. The interstitial filler may insulate the set of miniaturized electrode pillars from each other and bolster the set of miniaturized electrode pillars.

Abstract: There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate. A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.

Abstract: Methods of preparing porous wood products for painting or finishing are described. The methods comprise applying to a porous wood product a UV-curable coating and curing by UV light the top UV curable coating to 70% to 95% cure, preferably 85% to 95% for spray-applied top UV curable coatings to produce a partially cured porous wood product. The methods typically further include the step of sanding the surface of the partially cured porous wood product and painting or staining, for example with a water-based or solvent-based stain or paint.

Abstract: A method for fabricating an orifice in a semiconductor which can include: removing a first depth of the semiconductor using a first material removal technique and removing a second depth of the semiconductor using a second material removal technique. The method can optionally include: adding a sacrificial layer of material and reducing a depth of the semiconductor by a friction-based material removal technique. In examples, the method fabricates a wafer-scale processor with a set of fastening features.

Abstract: Method of manufacturing a micromechanical component intended to cooperate with another micromechanical component, the method comprising the steps of providing a substrate, forming a mould on said substrate, said mould defining sidewalls arranged to delimit said micromechanical component, providing particles on at least said sidewalls, depositing a metal in said mould so as to form said micromechanical component, and liberating said micromechanical component from said mould and removing said particles.

Abstract: The present invention relates to a HEA foam prepared by selective dissolution of a second phase within a two-phase separating alloy comprising the HEA and a manufacturing method thereof. The manufacturing method of the HEA foam of the present invention has the effect of preparing a novel HEA foam, which was not available in the past, by leaving only a first phase after manufacturing a two-phase separating alloy comprising a first phase by HEA, wherein at least 3 metal elements act as a common solvent. Furthermore, the HEA foam of the present invention has a structure, wherein pores are distributed inside the HEA, in which at least 3 metal elements act as a common solvent. By adding a functional characteristic of low heat conductivity, etc., to the existing high strength characteristic of HEA, the HEA foam of the present invention can exhibit a complex effect by the combination of the two particular effects, thereby being capable of exhibiting excellent physical characteristics.

Abstract: Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11.

Abstract: A method capable of increasing a degree of freedom of process conditions that can be set in a plasma treatment while limiting deterioration in the electrical characteristics of a silicon or metal oxide film exposed to plasma, in performing the plasma treatment on a substrate. The method includes: processing a substrate on which a silicon or metal oxide film is formed, with plasma obtained by plasmarizing a process gas composed of a halogen compound; and subsequently, heating the substrate at a temperature of 450 degrees C. or higher in an inert gas atmosphere or a vacuum atmosphere in a state where the metal oxide film exposed to the plasma is exposed. Thus, deterioration in the characteristics of the oxide film caused by the plasma treatment are restored.

Abstract: Systems and methods can involve wedge dissectors attached to strips in turn attached to medical balloons, for forming serrations within vascular wall tissue for angioplasty as well as drug delivery.

Abstract: According to one embodiment, a glass article may include a glass body having a first surface and a second surface opposite the first surface. The first surface and the second surface each have a radius of curvature. The first surface of the glass body comprises a flaw population extending from the first surface into a thickness of the glass body with a maximum initial flaw depth Ai. The first surface of the glass body may be etched to a depth less than or equal to about 25% of the maximum initial flaw depth Ai of the flaw population present in the first surface. When the glass article is under uniaxial compressive loading, at least a portion of the first surface is in tension and a uniaxial compressive strength of the glass article is greater than or equal to 90% of a uniaxial compressive strength of a flaw-free glass article.

Abstract: Methods of etching an inorganic layer on a glass substrate are described, the methods comprising contacting the glass substrate including an inorganic layer with an etching solution comprising a polar organic solvent and an etchant, wherein the inorganic layer is removed at an inorganic layer etching rate and the glass substrate is etched as a glass etching rate.

Abstract: Processes for localized film deposition on semiconductor device surfaces having non-planar features. The processes use combinations of Limited-Dose Atomic Layer Etch, Limited Dose Atomic Layer Deposition, and Atomic Layer Deposition to provide localized coatings only near or on the bottom, or only near the center, or only near or on the top and bottom of trench and Fin features.

Abstract: A method of manufacturing three-dimensional thin-film nitinol (NiTi) devices includes: depositing multiple layers of nitinol and sacrificial material on a substrate. A three-dimensional thin-film nitinol device may include a first layer of nitinol and a second layer of nitinol bonded to the first layer at an area masked and not covered by the sacrificial material during deposition of the second layer.

Abstract: A method for selectively etching a dielectric layer with respect to an epitaxial layer or metal-based hardmask is provided. The method comprises performing a plurality of cycles. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas, wherein the deposition gas comprises helium and a hydrofluorocarbon or fluorocarbon, forming the deposition gas into a plasma to effect a fluorinated polymer deposition, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, forming the activation gas into a plasma, providing an activation bias to cause ion bombardment of the fluorinated polymer deposition, wherein the ion bombardment activates fluorine from the fluorinated polymer deposition to etch the dielectric layer, and stopping the flow of the activation gas.

Abstract: A method for cutting a workpiece includes cutting the workpiece along a predefined cutting contour to separate a workpiece part from a scrap part, and checking whether the workpiece part has been fully separated from the scrap part during the cutting. The workpiece is re-cut along an additional cutting contour laterally offset from the predefined cutting contour if it is found during the checking that the workpiece part has not been fully separated from the scrap part. The disclosure also relates to an associated machine for cutting a workpiece.

Abstract: A carrier apparatus includes an article including a first major surface, a second major surface, a thickness between the first major surface and the second major surface, and an outer edge extending across the thickness between the first major surface and the second major surface. The carrier apparatus includes a coating including a central portion disposed on the first major surface of the article and an outer exposed portion disposed on the outer edge of the article, and a gasket including a first surface contacting the coating. An outer interface between the first surface of the gasket and the coating defines an outer boundary isolating the central portion of the coating from the outer exposed portion of the coating. Methods of processing a carrier apparatus to remove at least a portion of the coating from the article are also provided.

Abstract: There is provided a method for manufacturing a magnetic tunnel junction element which prevents properties degradation due to hydrogen ions, and to which RIE processing that is capable of securing an etching shape is applied. A multilayer film which has a magnetic film and an oxidation film, of which a thickness of the magnetic film is 2 nm or less, and of which the magnetic film and the oxidation film have an interface in a film surface direction is generated, a mask layer that is patterned is formed on the multilayer film, etching is performed with respect to the multilayer film on which the mask layer is formed, by using a mixed gas of a hydrogen gas and a nitrogen gas as a reaction gas, and a ratio of a flow rate of the hydrogen gas to a flow rate of the mixed gas is 50% or less.

Abstract: Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.

Abstract: An etching method of etching a silica-based residue containing a base component formed in an SiO2 film, includes selectively etching the silica-based residue by supplying an HF gas, an H2O gas or an alcohol gas to a target substrate having the SiO2 film, on which the silica-based residue is formed, and removing an etching residue caused by the selectively etching the silica-based residue, after the selectively etching the silica-based residue. The removing an etching residue includes a first process of supplying an H2O gas or an alcohol gas to the target substrate and a second process of heating the target substrate after the first process.