Abstract: Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set.

Abstract: A manufacturing method for a magnetic head includes the steps of: forming a main pole; forming a spin torque oscillator; and forming a trailing shield. The step of forming the spin torque oscillator includes: a step of forming a layered film; a step of forming an interposition layer; a step of forming a mask; a first etching step of etching a portion of the interposition layer using the mask; a second etching step of etching a portion of the layered film using the mask and the interposition layer as an etching mask; a step of removing the interposition layer and the mask; and a patterning step of patterning the layered film into the spin torque oscillator.

Abstract: A method for microassembly of heterogeneous materials comprises contacting a stamp with an ink disposed on a donor substrate to form an inked stamp, where the ink is reversibly bound to the stamp. The inked stamp is stamped onto a receiving substrate or onto an object on the receiving substrate, and the stamp is removed, thereby transferring the ink to the receiving substrate. The ink and the receiving substrate or the ink and the object are thermally joined, thereby forming a microassembly of heterogeneous materials. The ink may comprise a first material and the receiving substrate or the object may comprise a second material different from the first material.

Abstract: The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises sequential reactions with a metal precursor and a halogen-containing gas. In other embodiments, the etching rate is increased by removing residual species bound to and/or adsorbed onto the surface.

Abstract: Provided is a method of selectively etching a substrate including at least one cycle of: depositing a chemical precursor on a surface of the substrate, the substrate including a first portion and a second portion, to selectively form a chemical precursor layer on a surface of the first portion of the substrate without forming or substantially without forming the chemical precursor layer on a surface of the second portion of the substrate, wherein the first portion of the substrate and the second portion of the substrate are of different composition; exposing the chemical precursor layer on the surface of the first portion of the substrate and the surface of the second portion of the substrate to a plasma environment subjected to a bias power; and selectively and in a self-limited fashion removing at least a part of the second portion of the substrate, and repeating the cycle until the second portion of the substrate is substantially or completely removed.

Abstract: An apparatus for processing a substrate is provided. The apparatus includes a processing apparatus and a controller. The processing apparatus includes a chamber. The controller includes a memory and a processor coupled to the memory. The memory stores computer-executable instructions for controlling the processor to control a process of the processing apparatus. The process includes first forming a first film in a first region of the substrate in the chamber by chemical vapor deposition. The process further includes second forming a second film in a second region of the substrate in the chamber by atomic layer deposition. The first forming and the second forming are performed without moving the substrate out of the chamber.

Abstract: A method for producing a reflection-reducing layer system is disclosed. In an embodiment, a method includes depositing an organic layer on the substrate, generating a nanostructure in the organic layer by a plasma etching process, applying a cover layer to the nanostructure, wherein the organic layer, the nanostructure and the cover layer together form a reflection-reducing structure, wherein the cover layer comprises an inorganic material or an organosilicon compound, and wherein the cover layer is at least 5 nm thick and performing a post-treatment after applying the cover layer, wherein a material of the organic layer is at least partially removed, decomposed or chemically converted, and wherein an effective refractive index neff,2 of the reflection-reducing structure after the post-treatment is smaller than an effective refractive index neff,1 of the reflection-reducing structure before the post-treatment.

Abstract: Provided is a method of manufacturing a glass sheet (G) having a disc shape including a cutout portion (Gb) in a peripheral edge portion (Ga), the method including etching the cutout portion (Gb).

Abstract: Implementations of the present disclosure generally relate to methods for cleaning processing chambers. More specifically, implementations described herein relate to methods for determining processing chamber cleaning endpoints. In some implementations, a “virtual sensor” for detecting a cleaning endpoint is provided. The “virtual sensor” is based on monitoring trends of chamber foreline pressure during cleaning of the chamber, which involves converting solid deposited films on the chamber parts into gaseous byproducts by reaction with etchants like fluorine plasma for example. Validity of the “virtual sensor” has been confirmed by comparing the “virtual sensor” response with infrared-based optical measurements. In another implementation, methods of accounting for foreline pressure differences due to facility design and foreline clogging over time.

Abstract: A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.

Abstract: A rigid substrate, a touch panel including the rigid substrate and a processing method of the rigid substrate are provided. The rigid substrate includes an ion strengthened surface layer completely covering the entire outer surface thereof. The rigid substrate has an etched wall, wherein an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall.

Abstract: A polishing agent comprises: a fluid medium; an abrasive grain containing a hydroxide of a tetravalent metal element; a first additive; a second additive; and a third additive, wherein: the first additive is at least one selected from the group consisting of a compound having a polyoxyalkylene chain and a vinyl alcohol polymer; the second additive is a cationic polymer; and the third additive is an amino group-containing sulfonic acid compound.

Abstract: Provided is a method of manufacturing an organic deposition mask used in manufacturing of an organic light emitting diode (OLED). More specially, provided is a method of manufacturing an organic deposition mask by which fine deposition openings may be formed on a thin board by electrochemical machining (ECM) using a multi array electrode having projecting electrode parts arrayed thereon. According to an embodiment of the present invention, the method of manufacturing an organic deposition mask including deposition openings formed of first openings facing a deposition source and second openings facing a deposited object, the method may include: forming the first openings on one side of a thin board; and forming the second openings on an opposite side of the thin board by electrochemical machining (ECM) using a second multi array electrode having second projecting electrode parts arrayed thereon so as to communicate with the first openings.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

Abstract: Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.

Abstract: A shape of a hole can be improved. The plasma etching method includes a recess forming of forming a recess having a depth smaller than a thickness of a silicon oxide film by etching the silicon oxide film by plasma; a removing process of removing a reaction product adhering to the recess by plasma generated from a fluorocarbon gas; and a penetrating process of forming a hole penetrating the silicon oxide film by etching the recess, from which the reaction product is removed, by plasma.

Abstract: Disclosed are an apparatus and a method for treating a substrate. The method includes repeatedly rotating the substrate alternately at a first speed and at a second speed while the treatment liquid is supplied, and the second speed is higher than the first speed.

Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.

Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.

Abstract: A method for performing atomic layer etching of a surface of a substrate is provided, including: performing a surface conversion operation by exposing the surface of the substrate to a surface conversion reactant; performing a ligand exchange operation by exposing the surface of the substrate to a ligand containing reactant; performing a desorption operation that effects removal of surface species from the surface of the substrate; performing a purge operation; repeating the surface conversion operation, the ligand exchange operation, the desorption operation, and the purge operation, for a predefined number of cycles.