Abstract: A resist composition comprising a base polymer and a sulfonium salt of iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.

Abstract: An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.

Abstract: A pattern forming method includes forming a photosensitive resin composition layer on at least one surface of a substrate using a photosensitive transfer material, exposing the photosensitive resin composition layer; and developing the exposed photosensitive resin composition layer, in which the photosensitive transfer material includes a support, a thermoplastic resin layer, and a photosensitive resin composition layer in this order, and the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a photoacid generator (B).

Abstract: A photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to the ALG. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.

Abstract: A liquid solder resist composition contains a carboxyl group-containing resin (A), a thermosetting component (B), a photopolymerizable component (C), a photopolymerization initiator (D), and a coloring agent (E). The thermosetting component (B) contains a powdery epoxy compound (B11) represented by following formula (1), An amount of the epoxy compound (B11) with respect to a total amount of the carboxyl group-containing resin (A), the thermosetting component (B), and the photopolymerizable component (C) is within a range of 15 to 40 weight %.

Abstract: Organic coating composition are provided including antireflective coating compositions that can reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing or via-fill layer. Preferred organic coating compositions of the invention comprise one or more resins that can harden upon thermal treatment without generation of a cleavage product. Particularly preferred organic coating compositions of the invention comprise one or more components that comprise anhydride and hydroxy moieties.

Abstract: A liquid solder resist composition contains a carboxyl group-containing resin (A), a thermosetting component (B), a photopolymerizable component (C), and a photopolymerization initiator (D). The thermosetting component (B) contains a powdery epoxy compound (B11) represented by following formula (1).

Abstract: A photosensitive composition including a quantum dot complex having a polymeric outer layer, a carboxylic acid group-containing binder, a photopolymerizable monomer having a carbon-carbon double bond, a photoinitiator, and a solvent, wherein the polymeric outer layer includes a copolymer including: a first repeating unit having a moiety capable of interacting with a surface of the quantum dot, an organic ligand compound bonded to the surface of the quantum dot, or a combination thereof, and a second repeating unit having a reactive moiety.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate in a state of low irradiation with ionizing radiation or the like and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and the proportion of components having a molecular weight of less than 6,000 in the polymer is no greater than 0.5%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group. Va1 is a divalent hydrocarbon group. na1 represents an integer of 0 to 2. Ra?12 and Ra?13 are a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms or a hydrogen atom. Ra?14 is a phenyl group, a naphthyl group, or an anthryl group. In general formula (b1), Rb1 represents a cyclic hydrocarbon group. Yb1 represents a divalent linking group containing an ester bond. Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond. m is an integer of 1 or more, and Mm+ is an m-valent organic cation.

Abstract: Provided are a polymer that can be favorably used as a positive resist having a low film reduction rate under low irradiation, a high ? value, and high sensitivity, and a positive resist composition that can efficiently form a high-resolution pattern. The polymer includes an ?-methylstyrene unit and a methyl ?-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. In the polymer, the proportion of components having a molecular weight of less than 6,000 is no greater than 0.5% and the proportion of components having a molecular weight of greater than 80,000 is no greater than 6.0%. The positive resist composition contains the aforementioned polymer and a solvent.

Abstract: To provide a photosensitive resin composition containing a crosslinkable fluororesin which hardly damages a substrate of e.g. an organic semiconductor when a resin film is formed, and a resin film using it, an organic semiconductor device and its production process, and a fluororesin suitable for the photosensitive resin composition. A photosensitive resin composition comprising a fluororesin having a polymerizable carbon-carbon double bond and having a fluorine atom content of at least 47 mass %, a crosslinking agent having a polymerizable carbon-carbon double bond (excluding the fluororesin), a photoinitiator and a non-aromatic fluorinated solvent.

Abstract: A negative photosensitive composition including an epoxy group-containing resin; and a cationic polymerization initiator containing one or more types of the following cationic polymerization initiators: a compound represented by formula (b0-1) and a compound represented by formula (b0-2), and a cationic polymerization initiator which generates an acid having a pKa of ?3 or more. In the formulae, Rb01 to Rb04 are each independently a fluorine atom or an aryl group which may have a substituent, Rb05 is a fluorine atom or a fluorinated alkyl group which may have a substituent, a plurality of Rb05's may be the same as or different from each other, q is an integer of 1 or more, and Qq+'s are each independently a q-valent organic cation.

Abstract: A liquid solder resist composition contains a carboxyl group-containing resin, a photopolymerizable compound containing at least one compound selected from a group consisting of a photopolymerizable monomer and a photopolymerizable prepolymer, a photopolymerization initiator, a titanium dioxide, and a compound having a cyclic ether skeleton. The titanium dioxide contains both of a rutile titanium dioxide manufactured by a sulfuric acid method and a rutile titanium dioxide manufactured by a chlorine method.

Abstract: A resin composition comprising a binder resin (A), a phenoxy resin having a hydroxyl equivalent of 300 or more, and a cross-linking agent (C). The resin composition of the present invention preferably further comprises a photoacid generator (D). The photoacid generator (D) is more preferably a quinone diazide compound.

Abstract: Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity and planarization characteristics, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

Abstract: The present invention provides a tetracarboxylic acid diester compound shown by the following general formula (1), wherein X1 represents a tetravalent organic group; and R1 represents a group shown by the following general formula (2), Y1nRf)k??(2) wherein the dotted line represents a bond; Y1 represents an organic group with a valency of k+1; Rf represents a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms or an aromatic group in which a part or all of hydrogen atoms is/are substituted with a fluorine atom(s); “k” represents 1, 2, or 3; and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound that can give a polyimide precursor polymer soluble in a safe organic solvent widely used as a solvent of a composition, and usable as a base resin of a negative photosensitive resin composition.

Abstract: A photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-liable group, the acid generator generating an acid (I) or an acid (II): the acid (I) showing a hydrogen bonding parameter in the range of 12 (MPa)1/2 to 15 (MPa)1/2 and a polarity parameter in the range of 15 (MPa)1/2 or more; the acid (II) showing a hydrogen bonding parameter in the range of 12 (MPa)1/2 to 15 (MPa)1/2, and a distance of Hansen solubility parameters between the acid (II) and ?-butyrolactone being 7.5 or less, and the distance being calculated from formula (1): R=(4×(?dA?18)2+(?pA?16.6)2+(?hA?7.4)2)1/2??(1) in which ?dA represents a dispersion parameter of an acid, ?pA represents a polarity parameter of an acid, ?hA represents a hydrogen bonding parameter of an acid, and R represents a distance of Hansen solubility parameters between an acid and ?-butyrolactone.

Abstract: The present invention provides a tetracarboxylic acid diester compound represented by the following general formula (1), wherein, X1 represents a tetravalent organic group, and R1 represents a group represented by the following general formula (2), wherein, the dotted line represents a bonding, Y1 represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound which can lead a polymer of a polyimide precursor capable of using a base resin of a negative photosensitive resin composition which is capable of forming a fine pattern and giving high resolution, a polymer of a polyimide precursor obtained by using the tetracarboxylic acid diester compound and a method for producing the same.

Abstract: Provided is a photosensitive resin composition that contains (A) a photobase generator and (B) an alkali-soluble epoxy compound, wherein the photobase generator (A) contains a compound represented by formula (2-1): and the alkali-soluble epoxy compound (B) is an epoxy compound obtained by reacting (c) a polybasic acid anhydride with a product of a reaction between (a) an epoxy compound having two or more epoxy groups in the molecule and (b) a compound having one or more hydroxyl groups and one carboxyl group in the molecule.