Abstract: Embodiments in accordance with the present invention encompass self-imageable polymer compositions containing a variety of photobase generators which are useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays. The compositions of this invention can be tailored to form positive tone or negative tone images depending upon the intended application in aqueous developable medium. The images formed therefrom exhibit improved properties including low wafer stress and better thermo-mechanical properties, among other property enhancements.

Abstract: Embodiments encompassing a series of compositions containing polymers of norbornadiene and maleic anhydride monomers which are useful in forming a variety of photopatternable structures are disclosed and claimed. The compositions are useful as permanent dielectric materials. More specifically, embodiments encompassing compositions containing a series of ter- and tetrapolymers of a variety of norbornadiene, maleic anhydride, maleimide and norbornene-type cycloolefinic monomers in which maleic anhydride is fully or partially hydrolyzed (i.e., ring opened and fully or partially esterified), and a photoactive compound are disclosed, which are useful in forming permanent dielectric materials having utility in a variety of electronic material applications, among various other uses.

Abstract: A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), wherein Mb+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.

Abstract: A resist composition contains: a novolak resin (A1) having a protective group capable of being cleaved by action of an acid, an acid generator (B), an anticorrosive agent (G), and a solvent (D) as well as a method for producing a resist pattern includes steps (1) to (4); (1) applying the resist composition according to the above onto a substrate; (2) drying the applied composition to form a composition layer; (3) exposing the composition layer; and (4) developing the exposed composition layer.

Abstract: The present invention relates to a photosensitive resin composition for a color filter and an application of the same. The photosensitive resin composition includes an alkali-soluble resin (A), a compound (B) having an ethylenically unsaturated group, a photoinitiator (C), an organic solvent (D) and a pigment (E). The alkali-soluble resin (A) includes a first alkali-soluble resin (A-1) having the structure represented by formula (1). The aforementioned photosensitive resin composition is advantageously applied for the color filer with better contrast.

Abstract: Various cycloolefinic/maleic anhydride/maleimide polymers and compositions thereof useful for forming self-imageable films encompassing such polymers are disclosed. Such polymers encompass norbornene-type repeating units, maleimide repeat units and maleic anhydride-type repeating units where at least some of such maleic anhydride-type repeating units have been ring-opened. The films formed from such polymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices.

Abstract: A composition for forming a resist underlayer film which make possible to form a desired high-adhesion resist pattern. A resist underlayer film-forming composition for lithography containing a polymer having the following structure Formula (1) or (2) at a terminal of a polymer chain, crosslinker, compound promoting crosslinking reaction, and organic solvent. (wherein R1 is a C1-6 alkyl group optionally having a substituent, phenyl group, pyridyl group, halogeno group, or hydroxy group, R2 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, halogeno group, or ester group of —C(?O)O—X wherein X is a C1-6 alkyl group optionally having a substituent, R3 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, or halogeno group, R4 is a direct bond or divalent C1-8 organic group, R5 is a divalent C1-8 organic group, A is an aromatic ring or heteroaromatic ring, t is 0 or 1, and u is 1 or 2.

Abstract: A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process.

Abstract: Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.

Abstract: The present invention provides a resist under layer film composition containing a novolak resin having a repeating unit shown by the formula (1) and either or both of a novolak resin having a repeating unit shown by the formula (2) and a bisnaphthol derivative shown by the formula (3). There is provided a resist under layer film composition that is excellent in filling property, generates little outgas, and has excellent dry etching resistance and heat resistance.

Abstract: A radiation-sensitive resin composition comprising a binder resin (A), radiation-sensitive compound (B), cross-linking agent (C), and silane coupling agent (D) represented by the following general formula (1) is provided. In the general formula (1), R1 to R3 respectively independently are a monovalent alkyl group having 1 to 5 carbon atoms. R4 is a divalent alkylene group having 1 to 10 carbon atoms, R5 is a hydrogen atom or monovalent alkyl group having 1 to 5 carbon atoms, and R6 to R10 are a hydrogen atom or monovalent alkyl group having 1 to 5 carbon atoms.

Abstract: To a resist composition comprising a polymer comprising recurring units having an acid labile group and an acid generator is added a metal-acid complex. The metal is Ce, Cu, Zn, Fe, In, Y, Yb, Sn, Tm, Sc, Ni, Nd, Hf, Zr, Ti, La, Ag, Ba, Ho, Tb, Lu, Eu, Dy, Gd, Rb, Sr or Cs. The acid is a fluoroalkylsulfonic acid, fluorinated arylsulfonic acid, fluorinated tetraphenylboric acid, fluoroalkylsulfonimidic acid or fluoroalkylsulfonemethide acid. Due to a high contrast of alkaline dissolution rate before and after exposure, high resolution, high sensitivity, and controlled acid diffusion rate, the composition forms a pattern with satisfactory profile and minimal line edge roughness.

Abstract: The purpose of the present invention is to provide: a resin composition, a cured product of which has extremely low residual stress and exhibits excellent adhesion to a metal substrate such as a Pt, LT or Ta substrate after a wet heat test in the fields of semiconductors and MEMS/micromachine applications; a laminate of this resin composition; and a cured product of this resin composition or the laminate. The present invention is a photosensitive resin composition which contains an epoxy resin (A), a compound having a phenolic hydroxyl group (B) and a cationic photopolymerization initiator (C), and wherein: the epoxy resin (A) has a weighted average epoxy equivalent weight of 300 g/eq. or more; 20% by mass or more of the epoxy resin (A) is an epoxy resin represented by formula (1) and having an epoxy equivalent weight of 500-4,500 g/eq.; and the compound having a phenolic hydroxyl group (B) contains a phenolic compound having a specific structure.

Abstract: A photoresist composition and methods of using the same are disclosed. The photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to one of: the ALG and a crosslinker. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.

Abstract: Embodiments encompassing a series of compositions containing polymers of norbornadiene and maleic anhydride monomers which are useful in forming a variety of photopatternable structures are disclosed and claimed. The compositions are useful as permanent dielectric materials. More specifically, embodiments encompassing compositions containing a series of ter- and tetrapolymers of a variety of norbornadiene, maleic anhydride, maleimide and norbornene-type cycloolefinic monomers in which maleic anhydride is fully or partially hydrolyzed (i.e., ring opened and fully or partially esterified), and a photoactive compound are disclosed, which are useful in forming permanent dielectric materials having utility in a variety of electronic material applications, among various other uses.

Abstract: A photosensitive resin composition comprises a component (A): a resin having a phenolic hydroxyl group; a component (B): an aliphatic compound having two or more functional groups, the functional groups being one or more group selected from an acryloyloxy group, a methacryloyloxy group, a glycidyloxy group and a hydroxyl group; a component (C): a photosensitive acid generator; and a component (D): an inorganic filler having an average particle diameter of 100 nm or less.

Abstract: Embodiments in accordance with the present invention encompass negative-tone, solvent developable, self-imageable polymer compositions containing photobase generators which are useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.

Abstract: Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. In the above Chemical Formula 1, A, A? , X, Y, I, m and n are the same as described in the detailed description.

Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.

Abstract: A block copolymer useful in electron beam and extreme ultraviolet photolithography includes a first block with units derived from a base-solubility-enhancing monomer and an out-of-band absorbing monomer, and a second block having a low surface energy. Repeat units derived from the out-of-ban absorbing monomer allow the copolymer to absorb significantly in the wavelength range 150 to 400 nanometers. When incorporated into a photoresist composition with a photoresist random polymer, the block copolymer self-segregates to form a top layer that effectively screens out-of-band radiation.