Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si?C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.

Abstract: A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer.

Abstract: A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers in a solution of a non-polymerizable compound containing a nitrogen atom to which an acid labile group is bound. This prevents deprotection reaction of the acid labile group in the case of positive resist-forming polymer or crosslinking reaction in the case of negative resist-forming polymer.

Abstract: A composition for forming an interlayer insulating film including a polymerizable monomer, an imide compound represented by general formula (z-1), a reaction promoter which promotes the polymerization of the polymerizable monomer and the imide compound, and a polymerization initiator, an interlayer insulating film containing a polymerized product thereof, a method for forming an interlayer insulating film pattern, and a device including the interlayer insulating film on a support. In the formula (z-1), R1 and R2 represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. Rz00 represents a divalent organic group containing an aliphatic hydrocarbon group and/or an aromatic hydrocarbon group, Rz01 and Rz02 represent an alkyl group or an alkoxy group, and n1 and n2 are 0 or 1.

Abstract: A salt represented by formula (I): wherein Q1 and Q2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, R1 and R2 independently each represent a hydrogen atom, a fluorine atom or a C1-C6 perfluoroalkyl group, z represents an integer of 0 to 6, X1 represents *—C(?O)—O—, *—O—C(?O)—, *—O—C(?O)—O— or —O—, where * represents a binding site to —C(R1)(R2)— or —C(Q1)(Q2)-, A1 represents a C2-C36 divalent hydrocarbon group in which a methylene group can be replaced by an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group and in which a hydrogen atom can be replaced by a substituent, R3 represents a hydrogen atom or a methyl group, and Z+ represents an organic cation.

Abstract: Provided is a negative photoresist composition for a KrF laser for semiconductor pattern formation, which includes a predetermined compound in order to improve the properties of a conventional negative photoresist, thereby realizing high transparency, high resolution and an excellent profile, even in the presence of an exposure source having a short wavelength compared to the conventional negative photoresist, and is thus suitable for use in semiconductor processing.

Abstract: A composition for forming an interlayer insulating film including a polymerizable monomer, an alkali-soluble elastomer containing a polymerizable group, an imide compound represented by general formula (z-1), and a polymerization initiator, an interlayer insulating film containing a polymerized product thereof, a method for forming an interlayer insulating film pattern, and a device including the interlayer insulating film on a support. In the formula (z-1), R1 and R2 represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Rz00 represents a divalent organic group containing an aliphatic hydrocarbon group and/or an aromatic hydrocarbon group, Rz01 and Rz02 represent an alkyl group or an alkoxy group, and n1 and n2 are 0 or 1.

Abstract: A solder resist composition includes: (A) a carboxyl group-containing resin; (B) an epoxy compound; (C) titanium dioxide; (D) a photopolymerization initiator; and (E) an antioxidant. The component (B) contains a hydroquinone epoxy compound represented by following formula (1). The component (D) contains (D1) a bisacylphosphine oxide-based photopolymerization initiator and (D2) an ?-hydroxy alkylphenone-based photopolymerization initiator.

Abstract: A method of fabricating a structure includes disposing a liquid photoreactive composition on a substrate, exposing a portion of the liquid photoreactive composition to laser light of sufficient intensity and wavelength to cause polymerization via two-photon excitation of the two-photon sensitizer and polymerization of a portion of the liquid photoreactive composition thereby providing an exposed composition; and developing the exposed composition to provide the structure. The liquid composition includes: at least one cationically polymerizable polyepoxide; at least one compound comprising free-radically polymerizable groups; an effective amount of a two-photon photoinitiator system, wherein the weight ratio of component (a) to component (b) is from 25:75 to 75:25, inclusive. The two-photon photoinitiator system includes a two-photon sensitizer and an aromatic onium salt. The liquid photoreactive composition may contain less than about one percent by weight of organic solvent.

Abstract: Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si—O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices.

Abstract: The present invention relates to a photosensitive resin composition containing (A) an acid-modified vinyl group-containing epoxy resin, (B) a photopolymerization initiator, (C) a thiol group-containing compound, and (E) a photopolymerizable compound, wherein the component (A) contains at least one acid-modified vinyl group-containing epoxy resin (A1) which is obtained from a bisphenol-novolak epoxy resin (a1) having a structural unit represented by a general formula (IV) or (V), and an acid-modified vinyl group-containing epoxy resin (A2) which is obtained from an epoxy resin (a2) differing from the epoxy resin (a1).

Abstract: The present invention provides a silicone skeleton-containing polymer compound containing a repeating unit shown by the general formula (1). There can be provided a silicone skeleton-containing polymer compound suitable used as a base resin of a chemically amplified negative resist composition that can remedy the problem of delamination generated on a metal wiring such as Cu and Al, an electrode, and a substrate, especially on a substrate such as SiN, and can form a fine pattern without generating a scum and a footing profile in the pattern bottom and on the substrate.

Abstract: A method of forming a pattern comprises diffusing an acid formed by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer having acid decomposable groups and attachment groups covalently bonded to the surface of the substrate and/or forming an interpolymer crosslink. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region on the underlayer, with the shape of the pattern. The photosensitive layer is removed, forming a self-assembling layer comprising a block copolymer having a first block with an affinity for the polar region, and a second block having less affinity for the polar region. The first block forms a domain aligned to the polar region, and the second block forms another domain aligned to the first. Removing either domain exposes a portion of the underlayer.

Abstract: A resist underlayer film composition for lithography, including: a silane: at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes a silane having a cyclic organic group containing as atoms making up the ring, a carbon atom, a nitrogen atom, and a hetero atom other than a carbon and nitrogen atoms. The hydrolyzable organosilane may be a hydrolyzable organosilane of Formula (1), wherein, at least one group among R1, R2, and R3 is a group wherein a —Si(X)3 group bonds to C1-10 alkylene group, and other group(s) among R1, R2, and R3 is(are) a hydrogen atom, C1-10 alkyl group, or C6-40 aryl group; a cyclic organic group of 5-10 membered ring containing atoms making up the ring, a carbon atom, at least one of nitrogen, sulfur or oxygen atoms; and X is an alkoxy group, acyloxy group, or halogen atom.

Abstract: An additive for a resist underlayer film-forming composition containing a copolymer having structural units of Formulae (1) to (4), and a resist underlayer film-forming composition containing the additive: (where each R1 is independently a hydrogen atom or methyl group, Ar is arylene group, Pr is a protecting group or a hydrogen atom, X is a direct bond or a —C(?O)O—R2— group, R2 constituting the —C(?O)O—R2— group is a C1-3 alkylene group, the alkylene group is bonded to a sulfur atom, R3 is a hydrogen atom, methyl group, methoxy group, or halogeno group, R4 is a C1-3 alkyl group in which at least one hydrogen atom is substituted with a fluoro group, and Z is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, or norbornane skeleton).

Abstract: A photosensitive resin composition for forming an interlayer insulating film, which contains an alkali-soluble resin (A), a photosensitizer (B), a thermal acid generator (T) which generates an acid when heated, and a silane coupling agent (C), and wherein the alkali-soluble resin (A) has a constituent unit (A1) represented by general formula (a-1) or an alicyclic epoxy group-containing unit (A3). In general formula (a-1), R represents a hydrogen atom or a methyl group; and Ra01 represents a hydrogen atom or an organic group having a hydroxyl group.

Abstract: A photosensitive composition, a method for producing a cured film using the photosensitive composition, a cured film prepared by curing the photosensitive composition, and a touch panel and a display device that use the cured film are provided. The photosensitive composition contains: a compound having two or more ethylenically unsaturated groups; a photopolymerization initiator; a polymer A1 containing a constitutional unit a1 represented by the following Formula 1 and a constitutional unit a2 having a carboxylic acid anhydride structure; particles; and a solvent. A molar content ratio of the constitutional unit a1 to the constitutional unit a2 in the polymer A1 is in a range of a1:a2=3:1 to 6:1. An acid anhydride value of the polymer A1 is from 1.30 to 3.00 mmol/g. A number average primary particle size of the particles is from 10 to 200 nm.

Abstract: Various polycycloolefinic polymers containing phenolic pendent groups and compositions thereof useful for forming self-imageable films encompassing such polymers are disclosed. Such polymers encompass norbornene-type repeating units containing phenolic pendent groups which contain very low levels of fluorine containing monomers. The films formed from such polymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices.

Abstract: A resin composition for forming an insulating film including a polymer having a structural unit of the following formula (1a) and a structural unit of the following formula (1b); and an organic solvent; wherein T0 is a divalent organic group containing at least one arylene group in which at least one hydrogen atom is substituted with an amino group; and T1 is a divalent organic group containing at least one arylene group having at least one substituent, wherein the substituent is a substituent of the following formula (2); and wherein Z is a divalent, aliphatic, aromatic, or alicyclic group optionally having a substituent.

Abstract: The present invention provides a photosensitive composition having excellent heat resistance, low absorbance at the exposure light at wavelengths of g-line, h-line, and i-line, and satisfactory sensitivity even when the thickness of a resist film is increased, and also provides a resist material, a coating film thereof, a novolac phenol resin suitable for these applications, and a method for producing the phenol resin.