Abstract: A method of patterning a conductor on a substrate includes providing an inked elastomeric stamp inked with self-assembled monolayer-forming molecules and having a relief pattern with raised features. Then the raised features of the inked stamp contact a metal-coated visible light transparent substrate. Then the metal is etched to form an electrically conductive micropattern corresponding to the raised features of the inked stamp on the visible light transparent substrate.

Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.

Abstract: An antireflection structure that can be formed in a desired shape, and a method for manufacturing the same are provided. An antireflection structure 100 includes a resin layer 200 formed in a desired shape, and inorganic material fine particles 201 dispersed inside the resin layer. A plurality of fine concaves 202 having an average inner diameter shorter than or equal to the minimum wavelength of light whose reflection should be suppressed are formed at the surface of the antireflection structure 100, thereby reducing the equivalent refractive index at the surface of the resin layer 200. The fine concaves 202 are formed by, after forming a composite material in which the nanosized inorganic material fine particles 201 are dispersed in the resin layer, dissolving the inorganic material fine particles 201 dispersed at the surface of the resin layer 200, using a solvent that dissolves only the inorganic material fine particles 201.

Abstract: A silicon nitride polishing liquid for chemical mechanical polishing of a body to be polished in a planarization process for manufacturing of a semiconductor integrated circuit, the body to be polished including at least a first layer containing silicon nitride and a second layer containing at least one silicon-including material selected from the group consisting of polysilicon, modified polysilicon, silicon oxide, silicon carbide, and silicon oxycarbide, the silicon nitride polishing liquid having a pH of 2.5 to 5.0, and including (a) colloidal silica, (b) an organic acid that has at least one sulfonic acid group or phosphonic acid group in the molecular structure thereof and functions as a polishing accelerator for silicon nitride, and (c) water.

Abstract: The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.

Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.

Abstract: According to a method of manufacturing a vertical-cavity surface-emitting semiconductor laser element in accordance with the present invention, a process of wet etching is performed for a part that is oxidized in a layer of an AlGaAs (42) which configures a layer having an index of refraction as lower and in which a composition of aluminum is designed to be as higher comparing to the other pairs of layers in a DBR mirror at an upper side that are formed at an inner side of a mesa post (38). And then a process of filling up again is performed with making use of a layer of polyimide (26). Moreover, an etchant that includes such as a hydrofluoric acid or a buffered hydrofluoric acid or an aqueous ammonia or the like is made use in order to perform such the process of wet etching.

Abstract: There is provided a thin-sheet glass substrate laminate which is approximately 100% impermeable to gas or vapor and has a high transparency and a thin thickness, and a method of manufacturing the same. A support is temporarily attached to one surface of a glass substrate after forming a pattern P on the one surface, the glass substrate is thinned by etching another surface of the glass substrate, a film base is temporarily attached to the etched another surface, the temporarily attached support is peeled off from the one surface of the glass substrate, the one surface from which the support is peeled off is laminated to a surface of a cover glass, and the temporarily attached film base is peeled off from the another surface.

Abstract: A method for manufacturing a magnetic device that obtains sufficient processing accuracy without increasing mask removal steps. A first mask layer is formed above a magnetic layer using one selected from the group consisting of Ti, Ta, W, and an oxide or a nitride thereof. A second mask layer is formed on the first mask layer using Ru or Cr. A resist pattern is formed on the second mask layer. A second mask pattern is formed by performing reactive ion etching with reactive gas containing oxygen on the second mask layer using the resist pattern. A first mask pattern is formed by performing reactive ion etching with reactive gas containing halogen gas on the first mask layer using the second mask pattern. A magnetic pattern is formed by performing reactive ion etching with reactive gas containing oxygen on the magnetic layer using the first mask pattern.

Abstract: A magnetic head suitable for high-density recording is provided at a high yield by a method that suppresses a reduction in reproducing output signal due to ion-beam irradiation. After an air-bearing surface of a read element, a magnetic-head element, or a row bar is mechanically polished, the air-bearing surface is irradiated with an ion beam, such that an orthographic projection of an ion-beam incidence direction onto the air-bearing surface forms an in-plane incidence angle of 30 degrees to 150 degrees or of 210 degrees to 330 degrees with respect to a track-width direction. Thereby, the formation of a short circuit due to ion-beam irradiation may be hindered.

Abstract: A method of processing a SOI substrate to form a groove in the SOI substrate in which a silicon layer is stacked on both sides of an oxide layer is disclosed. In accordance with an embodiment of the present invention, the method includes dividing a portion of the silicon layer, in which the groove is to be processed, into a plurality of unit portions, performing dry etching on certain portions of the plurality of divided unit portions such that the oxide layer is exposed and removing remaining portions of the plurality of divided unit portions by removing the oxide layer.

Abstract: A method for manufacturing a magnetic write head having a write pole and a trailing wrap around magnetic shield, and having a non-magnetic step layer and a non-magnetic bump to provide additional spacing between the write pole and the trailing wrap around shield at a location removed from the air bearing surface. A magnetic write pole material is deposited on a substrate and a non-magnetic step layer is deposited over the write pole. A reactive ion milling can he used to pattern the non-magnetic step layer to have a front edge that is located a desired distance from an air hearing surface. A patterning and ion milling process is then performed to define a write pole, and then a layer of alumina is deposited and ion milled to from a tapered, non-magnetic bump at the front the non-magnetic step layer.

Abstract: A method of fabricating a PTFE seal element and rotary shaft seal assembly therewith. The method includes providing a PTFE seal element and a vacuum chamber having electrodes therein. Next, placing the PTFE seal element on one electrode and drawing a vacuum pressure in the chamber and introducing a first process gas into the chamber. Further, applying a high frequency signal to the electrodes and producing a discharge plasma and etching and chemically modifying a surface of the PTFE seal element with the discharge plasma. Then, purging the vacuum chamber with a second process gas and restoring the vacuum chamber to an atmospheric pressure. Thereafter, rinsing the seal element and applying an adhesion promoter to the etched and chemically modified surface. Lastly, attaching the etched and chemically modified surface of the PTFE seal element to the carrier by molding an elastomeric material between the seal element and the carrier.

Abstract: According to one embodiment, a method of manufacturing a magnetic recording medium includes forming on a magnetic recording layer a first hard mask, a second hard mask, a third hard mask and a resist, imprinting the resist with a stamper, removing a residue left in the recesses of the patterned resist, etching the third hard mask by use of the patterned resist as a mask, etching the second hard mask by use of the third hard mask as a mask, etching the first hard mask by use of the second hard mask as a mask, forming a pattern of the magnetic recording layer with ion beam irradiation, and removing the first hard mask by use of a remover liquid with higher reactivity to the metal material of the first hard mask than to a constituent element of the magnetic recording layer.

Abstract: The present invention provides a method for producing a liquid discharge head including a silicon substrate having, on a first surface, energy generating elements, and a supply port penetrating the substrate from the first surface to a second surface, which is a rear surface of the first surface of the substrate. The method includes the steps of: preparing the silicon substrate having a sacrifice layer at a portion on the first surface where the ink supply port is to be formed and an etching mask layer having a plurality of openings on the second surface, the volume of a portion of the sacrifice layer at a position corresponding to a portion between two adjacent said openings being smaller than the volume of a portion of the sacrifice layer at a position corresponding to the opening; etching the silicon substrate from the plurality of openings and etching the sacrifice layer.

Abstract: A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.

Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.

Abstract: The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.

Abstract: An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1 ?·cm using the etching liquid.

Abstract: An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process. A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.