Abstract: A capacitively-driven tunable coupler includes a coupling capacitor connecting an open end of a quantum object (i.e., an end of the object that cannot have a DC path to a low-voltage rail, such as a ground node, without breaking the functionality of the object) to an RF SQUID having a Josephson element capable of providing variable inductance and therefore variable coupling to another quantum object.

Abstract: A circuit includes a first delay filter, a first comparator, an inverter, a second delay filter, a second comparator, an OR gate, and a latch. A first delay filter input is coupled to an inverter input. The first comparator has a first comparator input coupled to a first delay filter output and a second comparator input. The second delay filter has an input coupled to an inverter output. The second comparator has a third comparator input coupled to a second delay filter output, and a fourth comparator input coupled to the second comparator input. The OR gate has an input coupled to a first comparator output and another input coupled to a second comparator output. The latch has a clock input coupled to an OR gate output and a latch input coupled to the inverter input. A latch output provides a deglitched signal.

Abstract: Reducing a sensitivity of an electromechanical sensor is presented herein. The electromechanical sensor comprises a sensitivity with respect to a variation of a mechanical-to-electrical gain of a sense element of the electromechanical sensor; and a voltage-to-voltage converter component that minimizes the sensitivity by coupling, via a defined feedback capacitance, a positive feedback voltage to a sense electrode of the sense element—the sense element electrically coupled to an input of the voltage-to-voltage converter component. In one example, the voltage-to-voltage converter component minimizes the sensitivity by maintaining, via the defined feedback capacitance, a constant charge at the sense electrode. In another example, the electromechanical sensor comprises a capacitive sense element comprising a first node comprising the sense electrode. Further, a bias voltage component can apply a bias voltage to a second node of the electromechanical sensor.

Abstract: A gate drive circuit includes a driver for driving a gate of a switching element, a peak voltage detector, and a drive capacity calculator. The peak voltage detector detects a peak voltage at a main terminal of the switching element when the switching element is OFF. The drive capacity calculator calculates a voltage difference value between the detected peak voltage and an allowable voltage value at the main terminal of the switching element, where the allowable voltage is based on the specifications of the switching element. The drive capacity calculator changes a drive capacity of the driver to gradually decrease the difference between the detected peak voltage and the allowable voltage.

Abstract: A multi-deck circuit arrangement including a first deck circuit having a negative supply terminal and a second deck having a positive supply terminal connected to the negative supply terminal. A single power supply provides a voltage across both the first and second decks. The total power consumption will be less than the prior art of having both deck circuits conventionally regulated. The supply rail connecting the second deck's positive supply terminal to the first deck's negative supply terminal may be regulated. In one embodiment, the rail voltage can be controlled to optimize deck circuit operation for speed and power and to avoid level shifters when interfacing to other circuits.

Abstract: Provided is a power relay assembly. The power relay assembly comprises: a support plate having at least one electrical element mounted on one surface thereof and including a plastic material having a heat dissipation property and insulation property; at least one bus bar electrically connected to the electrical element; and an electromagnetic wave shielding unit for shielding electromagnetic waves generated from the electrical element.

Abstract: A driver circuit drives a high voltage I/O interface using stacked low voltage devices in the pull-up and pull-down portions of the driver. The transistor closest to the PAD in the pull-up portion receives a dynamically adjusted gate bias voltage adjusted based on the value of the data supplied to the output circuit and the transistor in the pull-down portion closest to the PAD receives the same dynamically adjusted gate bias voltage. The transistors closest to the power supply nodes receive gate voltages that are level shifted from the core voltage levels of the data supplied to the output circuit. The transistors in the middle of the pull-up and pull-down transistor stacks receive respective static gate voltages. The bias voltages are selected such that the gate-drain, source-drain, and gate-source voltages of the transistors in the output circuit do not exceed the voltage tolerance levels of the low voltage devices.

Abstract: A level shifting circuit includes negative voltage shifting circuitry including a first leg and a second leg. The first leg includes a first NMOS transistor and a first PMOS transistor in series with a first input node and a negative amplified voltage, and the second leg includes a second NMOS transistor and a second PMOS transistor in series with a second input node and the negative amplified voltage. The level shifting circuit further includes positive voltage shifting circuitry including a first plurality of high voltage transistors in series with a positive amplified voltage and an output node of the level shifting circuit, and a second plurality of high voltage transistors in series with a first intermediate node of the first leg of the negative voltage shifting circuitry and the output node of the level shifting circuit. The level shifting circuitry further includes input circuitry including a plurality of inverters.

Abstract: A comparator having: a first transistor coupled to a first input terminal; a first current source coupled to the first transistor; a second transistor coupled to a second input terminal and coupled to the first current source; a third transistor coupled in series with the first transistor; a fourth transistor coupled in series with the second transistor; a fifth transistor coupled in series with the first transistor; a sixth transistor coupled in series with the second transistor; a seventh transistor coupled to the first input terminal and coupled as a source follower to the fifth transistor; and an eighth transistor coupled to the second input terminal and coupled as a source follower to the sixth transistor. The comparator also including a differential amplifier coupled to the first output terminal and coupled to the second output terminal.

Abstract: An output driver (1) comprises a driver transistor (MP0) having a gate node (GMP0) to apply a gate control voltage (GCV) and a gate control circuit (30) to control the gate node (GMP0) of the driver transistor (MP0). The output driver (1) is configured to be operable in a first operation mode and a second operation mode, the variable resistance of the current path of the driver transistor (MP0) being lower in the first operation mode than in the second operation mode. The gate control circuit (30) comprises a controllable resistor (RC), the controllable resistor (RC) being disposed between the gate node (GMP0) of the driver transistor (MP0) and an output node (QP) of the output driver (1), and a resistance of the controllable resistor (RC) being dependent on operating the output driver in the first or second operation mode.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: A driver IC (100) includes a pair of output terminals in each of a plurality of channels and in each of the channels, power is supplied from the pair of output terminals (OUT1 and OUT2, OUT3 and OUT4, OUT5 and OUT6 or OUT7 and OUT8) to a load (M1, M2, M3 or M4). In each of the channels, the pair of output terminals are adjacent to each other.

Abstract: A load switch circuit includes a power transistor. A first terminal is configured to receive a power supply voltage, and a second terminal is the output terminal of the load switch circuit and is coupled with an external inductive load. A clamping module includes at least a mutually coupled clamping unit and a driving unit. The clamping unit includes a voltage-current converter and a first resistor, the first resistor coupled between the output terminal of the voltage-current converter and the second terminal of the power transistor. The positive input terminal of the voltage-current converter receives the power supply voltage, and the negative input terminal is coupled to the second terminal of the power transistor.

Abstract: A sensor output circuit is limited with high accuracy, and reduces radio wave radiation by signal transmission using a single-line signal. The sensor output includes a pulse signal Vin that changes according to a physical quantity to be measured, MOS transistors that perform on/off operations according to the pulse signal Vin, a constant current source that generates a constant current, a MOS transistor which generates a gate voltage of a MOS transistor, MOS transistors which form a current mirror circuit, and the MOS transistor which works to maintain a drain voltage of the MOS transistor at a constant voltage, and the output terminal which is driven by the MOS transistors connected in series. In addition, an output signal from the sensor output circuit is transmitted to a control circuit via an output signal line. The control circuit includes a pull-up resistor, a capacitor, and an input gate circuit.

Abstract: Apparatus and methods that have a semiconductor charge pump can be implemented in a variety of applications. Such a charge pump can have a charge pump unit core that includes a pump section and a single passgate coupled to the pump section to transfer charge, where the single passgate is a n-channel metal-oxide semiconductor (NMOS) transistor coupled directly to an input and an output of the charge pump unit core. The transfer of charge can be based on a set of clock signals. Additional apparatus, systems, and methods are disclosed.

Abstract: An apparatus including a set of one or more receivers; a first replica circuit being a substantial replica of at least a portion of one of the set of one or more receivers; a first control circuit generates an output signal selectively coupled to an input of the first replica circuit; a second replica circuit being a substantial replica of at least a portion of one of the set of one or more receivers; a comparator including a first input coupled to a first output of the first replica circuit, a second input coupled to a second output of the second replica circuit, and an output; and a second control circuit including an input coupled to the output of the comparator, and an output coupled to the first replica circuit and to the set of one or more receivers.

Abstract: An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

Abstract: There is provided a device that includes a MOS transistor and a bias circuit coupled to the MOS transistor. The bias circuit is configured to bias the MOS transistor thereby maintaining the MOS transistor outside of saturation. The MOS transistor is configured to operate as a buffer or an amplifier, while being outside of saturation.

Abstract: A technique relates to a pulse shaping of microwave signals. A nondegenerate mixing device receives signals and a time-varying magnetic flux via input ports. The nondegenerate mixing device uses the signals and the time-varying magnetic flux to generate an output signal on an output port, the output signal having a waveform profile set by the time-varying magnetic flux.

Abstract: In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.