Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a substrate having a well, a first terminal including a first raised semiconductor layer, a second terminal including a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The base layer has an overlapping arrangement with the well. The structure further includes a dielectric layer positioned in a vertical direction between the first terminal and the substrate, the second terminal and the substrate, and the base layer and the substrate.

Abstract: A LED light display having a plurality of LED bulb arrays and a louver panel defining a plurality of hole arrays. Each hole array can define openings that are sized and spaced to receive at least the distal end portions of the bulbs forming a single LED bulb array. The louver panel further has a plurality of shaped protrusions in the form of louvers that are configured to extend outwardly and forwardly from a front surface of the louver panel and are arranged in a plurality of columns and in a plurality of rows in regularly repeating patterns related to the pattern of the placement of a plurality of the plurality of hole arrays in the louver panel and are further configured to block at least a portion of the emission of light from the LED bulbs in both a horizontal and vertical direction.

Abstract: A photocurable composition includes quantum dots, quantum dot precursor materials, a chelating agent, one or more monomers, and a photoinitiator. The quantum dots are selected to emit radiation in a first wavelength band in the visible light range in response to absorption of radiation in a second wavelength band in the UV or visible light range. The second wavelength band is different than the first wavelength band. The quantum dot precursor materials include metal atoms or metal ions corresponding to metal components present in the quantum dots. The chelating agent is configured to chelate the quantum dot precursor materials. The photoinitiator initiates polymerization of the one or more monomers in response to absorption of radiation in the second wavelength band.

Abstract: Some embodiments include an integrated assembly having a memory region and another region adjacent the memory region. Channel-material-pillars are arranged within the memory region, and conductive posts are arranged within said other region. A source structure is coupled to lower regions of the channel-material-pillars. A panel extends across the memory region and said other region, and separates a first memory-block-region from a second memory-block-region. Doped-semiconductor-material is directly adjacent to the panel within the memory region and the other region. Rings laterally surround lower regions of the conductive posts. The rings are between the conductive posts and the doped-semiconductor-material. The rings include laminates of two or more materials, with at least one of said two or more materials being insulative. Some embodiments include methods for forming integrated assemblies.

Abstract: An image display element includes micro light emitting elements disposed in an array on a driving circuit substrate. An excitation light emitting element includes a main body including a compound semiconductor, a metal electrode disposed on a side of the main body located closer to the driving circuit substrate, and a transparent electrode disposed on an opposite side to the driving circuit substrate, and a light emission layer included in the main body is disposed on a side opposite to the driving circuit substrate from a center portion of the main body.

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

Abstract: An inventive light-emitting apparatus comprises an array of multiple light-emitting pixels, and one or more transmissive optical elements positioned at a light-emitting surface of the light-emitting pixel array. One or more of the light-emitting pixels is defective. Each optical element is positioned at a location of a corresponding defective light-emitting pixel, and extends over that defective pixel and laterally at least partly over one or more adjacent pixels. Each optical element transmits laterally at least a portion of light emitted by the adjacent pixels to propagate away from the array from the location of the defective pixel, reducing the appearance of the defective pixel.

Abstract: A method of manufacturing a display device includes forming a first electrode on a substrate, forming a bank layer on the first electrode, wherein the bank layer includes an opening portion exposing at least a portion of the first electrode, forming a first bank layer and a second bank layer by baking the bank layer, wherein the second bank layer is on the first bank layer and has liquid repellency, forming a first layer on the first electrode, and forming a third bank layer and a fourth bank layer by baking the first bank layer and the second bank layer, wherein the fourth bank layer is on the third bank layer and has liquid repellency, wherein the fourth bank layer is thinner than the second bank layer.

Abstract: A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and having a minimum reflectance of 20% or more in a specific wavelength region, in which the specific wavelength region is from the emission peak wavelength of the phosphor to 800 nm, and a light-emitting device comprising the phosphor.

Abstract: A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.

Abstract: A method of making a semiconductor device includes depositing a TiN layer over a substrate. The method further includes doping a first portion of the TiN layer using an oxygen-containing plasma treatment. The method further includes doping a second portion of the TiN layer using a nitrogen-containing plasma treatment, wherein the second portion of the TiN layer directly contacts the first portion of the TiN layer. The method further includes forming a first metal gate electrode over the first portion of the TiN layer. The method further includes forming a second metal gate electrode over the second portion of the TiN layer, wherein the first metal gate electrode has a different work function from the second metal gate electrode, and the second metal gate electrode directly contacts the first metal gate electrode.

Abstract: A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and having a minimum reflectance of 20% or more in a specific wavelength region, in which the specific wavelength region is from the emission peak wavelength of the phosphor to 800 nm, and a light-emitting device comprising the phosphor.

Abstract: A transparent display panel, including a substrate, a first electrode layer disposed on the substrate, a light-emitting structure layer disposed on the first electrode layer, and a second electrode layer disposed on the light-emitting structure layer; the first electrode layer includes a plurality of first electrode groups arranged along a first direction; each of the first electrode groups includes at least one first electrode extending along a second direction, the second direction intersects with the first direction; each of the at least one first electrode includes at least two first electrode blocks and at least one connecting part, and two adjacent first electrode blocks are electrically connected with each other by a corresponding connecting part.

Abstract: A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2?=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2?=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.

Abstract: A semiconductor device includes a peripheral circuit region including a first substrate and circuit devices on the first substrate, a memory cell region including a second substrate on the first substrate, a horizontal conductive layer on the second substrate, gate electrodes stacked on the horizontal conductive layer in a first direction perpendicular to an upper surface of the second substrate and spaced apart from each other, and channel structures extending in gate electrodes in the first direction, each of the channel structures including a channel layer in physical contact with the horizontal conductive layer, and a through wiring region including a through contact plug extending in the first direction and electrically connecting the memory cell region to the peripheral circuit region, an insulating region bordering the through contact plug, and dummy channel structures partially extending into the insulating region in the first direction.

Abstract: A semiconductor light emitting device includes a substrate structure, first and second regions and a main region; a light emitting structure, first and second electrode layers, an interlayer insulating layer, and a pad electrode layer. The light emitting structure is provided on the third region. The first electrode layer is provided between the substrate structure and the light emitting structure, and has a first electrode extension that extends into the first region. The second electrode layer is provided between the first electrode layer and the light emitting structure, and has a second electrode extension that extends into the second region. The interlayer insulating layer is provided between the first and second electrode layers, and has an opening exposing a portion of the first electrode extension. The pad electrode layer is provided on the interlayer insulating layer, and is connected to the portion of the first electrode extension through the opening.

Abstract: A phosphor having a favorable emission peak wavelength, narrow full width at half maximum, and/or high emission intensity is provided. Additionally, a light-emitting device, an illumination device, an image display device, and/or an indicator lamp for a vehicle having favorable color rendering, color reproducibility and/or favorable conversion efficiency are provided. The present invention relates to a phosphor including a crystal phase having a composition represented by a specific formula, and when, in a powder X-ray diffraction spectrum of the phosphor, the intensity of a peak that appears in a region where 2?=38-39° is designated as Ix and the intensity of a peak that appears in a region where 2?=37-38° is designated as Iy, the relative intensity Ix/Iy of Ix to Iy is 0.140 or less, and a light-emitting device comprising the phosphor.

Abstract: Provided herein may be a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device may include a stacked body including a plurality of interlayer insulating layers and a plurality of gate electrodes that are alternately stacked on a substrate, and a plurality of channel structures configured to vertically pass through the stacked body. Each of the plurality of channel structures may include a core insulating layer, a first channel layer, a second channel layer, a tunnel insulating layer, and a charge storage layer that extend vertically towards the substrate. Electron mobility of the first channel layer may be higher than electron mobility of the second channel layer.

Abstract: Embodiments disclose LEDs that operate using impact ionization. Devices include a first conductivity type layer having a first conductivity type, a first intrinsic layer, a charge layer, an impact ionization layer, and a contact layer. The charge layer has a net charge of the first conductivity type and has a material comprising a polar oxide or a non-polar oxide. The charge layer forms a barrier for transporting carriers of the first conductivity type until a bias is applied between the first conductivity type layer and the contact layer to flatten the barrier.

Abstract: A gate structure includes a substrate divided into an N-type transistor region and a P-type transistor region. An interlayer dielectric covers the substrate. A first trench is embedded in the interlayer dielectric within the N-type transistor region. A first gate electrode having a bullet-shaped profile is disposed in the first trench. A gate dielectric contacts the first trench. An N-type work function layer is disposed between the gate dielectric layer and the first gate electrode. A second trench is embedded in the interlayer dielectric within the P-type transistor region. A second gate electrode having a first mushroom-shaped profile is disposed in the second trench. The gate dielectric layer contacts the second trench. The N-type work function layer is disposed between the gate dielectric layer and the second gate electrode. A first P-type work function layer is disposed between the gate dielectric layer and the N-type work function layer.