Abstract: The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.

Abstract: IHSs (Information Handling Systems) may include connectors, such as an XDP connector, that support couplings by diagnostic tools that utilize a debugging interface that is supported by the IHS, such as JTAG interface. These connectors provide a useful debugging mechanism but may be exploited to access protected information and to install malicious software. Detecting when these debugging capabilities have been compromised is very difficult. In embodiments, a remote access controller of the IHS disables the JTAG interface prior to initialization of the IHS processor by maintaining the interface in reset state. The remote access controller does not include instructions necessary for releasing the JTAG interface from this reset state until its firmware has been updated. If the remote access controller detects debugging activity while the JTAG interface is still in a reset state, the remote access controller signals an attempt to conduct an unauthorized debug session.

Abstract: A system comprises a plurality of memory devices storing a set of codewords and a processing device, operatively coupled to the plurality of memory devices, to perform operations including: detecting a power-on of the system; determining a read-retry trigger rate (TR) based on reading a subset of the codewords during a time interval directly after actual initialization of the plurality of memory devices, wherein the time interval includes a time period before entering a normal operating mode, and no full-memory refresh operation is performed during the normal operating mode; determining whether the TR satisfies a threshold criterion; and in response to the TR not satisfying the threshold criterion, initializing the full-memory refresh operation of the plurality of memory devices.

Abstract: A memory controller includes: a test module for generating a test command, a test address, and test data during a test operation; a refresh control module for receiving the test command and the test address as an active command and an active address, and generating a first target address by sampling the active address according to the active command, during the test operation; a command/address generation module for providing the active address together with the active command, and providing the first target refresh command together with the first target address to a memory device, while determining whether to repair the active address according to a repair control signal; and a repair analysis module for generating the repair control signal based on a comparison result of the test data and read data from the memory device, during the test operation.

Abstract: A method for testing a memory area. The method includes jumping from a destination address to a source address, reading a data word at the source address after jumping to the source address, and examining the data word. The source address was determined based on a static test.

Abstract: A decoder decodes a memory address and selectively drives a select line (such as a word line or mux line) of a memory. An encoding circuit encodes the data on select lines to generate an encoded address. The encoded address and the memory address are compared by a comparison circuit to generate a test result signal which is indicative of whether the decoder is operating properly. To test the comparison circuit for proper operation, a subset of an MBIST scan routine causes the encoded address to be blocked from the comparison circuit and a force signal to be applied in its place. A test signal from the scan routine and the force signal are then compared by the comparison circuit, with the test result signal generated from the comparison being indicative of whether the comparison circuit itself is operating properly.

Abstract: A system and method for optimizing seasoning trim values based on form factors in memory sub-system manufacturing. An example method includes selecting a baseline set of trim values based on a set of memory sub-system form factors; generating a first modified set of trim values for seasoning operations by modifying a first trim value of the baseline trim values; causing each memory sub-system of a plurality of memory sub-systems to perform seasoning operations using the first modified set of trim values; responsive to determining that a memory sub-system of the plurality of memory sub-system failed to satisfy a predetermined criterion, determining whether the memory sub-system is extrinsically defective; responsive to determining that the memory sub-system is extrinsically defective, removing the extrinsically defective memory sub-system from the set of memory sub-systems; and generating a second modified set of trim values for seasoning operations.

Abstract: Data verification technology for ordered event stream (OES) events written into an ordered event stream storage system is disclosed. The verification technology provides perfect reliability. The verification technology further requires low storage overhead in comparison to typical checksums, storing replicated data, etc. Test event data can be generated in a reproducible manner based upon determined OES metadata. OES metadata can be determined from input received via a user interface, via characteristics of an OES storage system, etc., and can be stored for later use in data verification. The test event data can be stored to a portion of an OES storage system under test. The stored test event data can subsequently be verified by using the stored OES metadata to regenerate test event data for comparison to the stored test event data. The test event ordering can be verified via sequence information included in the stored test event data.

Abstract: Manufacturers perform tests on chips before the chips are shipped to customers. However, defects can occur on a chip after the manufacturer testing and when the chips are used in a system or device. The defects can occur due to aging or the environment in which the chip is employed and can be critical; especially when the chips are used in systems such as autonomous vehicles. To verify the structural integrity of the IC during the lifetime of the product, an in-system test (IST) is disclosed. The IST enables self-testing mechanisms for an IC in working systems. The IST mechanisms provide structural testing of the ICs when in a functional system and at a manufacturer's level of testing. Unlike ATE tests that are running on a separate environment, the IST provides the ability to go from a functional world view to a test mode.

Abstract: Methods, systems, and devices for testing of multi-level signaling associated with a memory device are described. A tester may be used to test one or more operations of a memory device. The memory device may be configured to communicate data using a modulation scheme that includes three or more symbols. The tester may be configured to communicate data using a modulation scheme that includes three or fewer symbols. Techniques for testing the memory device using such a tester are described.

Abstract: A circuit includes a test circuit in an integrated circuit to test signal timing of a logic circuit under test in the integrated circuit. The signal timing includes timing measurements to determine if an output of the logic circuit under test changes state in response to a clock signal. The test circuit includes a bit register that specifies which bits of the logic circuit under test are to be tested in response to the clock signal. A configuration register specifies a selected clock source setting from multiple clock source settings corresponding to a signal speed. The selected clock source is employed to perform the timing measurements of the specified bits of the bit register.

Abstract: A memory system includes a processing device (e.g., a controller implemented using a CPU, FPGA, and/or logic circuitry) and memory regions (e.g., in a flash memory or other non-volatile memory) storing data. The processing device receives an access request from a host system that is requesting to read the stored data. In one approach, the memory system is configured to: receive, from the host system over a bus, a read command to access data associated with an address in a non-volatile memory; in response to receiving the read command, access, by the processing device, multiple copies of data stored in at least one memory region of the non-volatile memory; match, by the processing device, data from the copies with each other; select, based on matching data from the copies with each other, first data from a first copy of the copies; and provide, to the host system over the bus, the first data as output data.

Abstract: A method for the secured storing of a data element of a predefined data type to be stored by a computer program in an external memory, which is connected to a microcontroller, an error correction value of one error correction value data type being used. The method includes, when creating the computer program: defining a composite data element that includes one element of the data type and one element of the error correction value data type, in the computer program; and when executing the computer program: calculating the error correction value for the data element to be stored; forming an error correction data element as the composite data element, which contains the data element to be stored and the associated error correction value, which has been calculated for the data element; and writing the error correction data element to a memory address for the error correction data element.

Abstract: A processing device in a memory system determines a first error rate corresponding to a first set of write-to-read delay times at a first end of a range of write-to-read delay times for a memory device and a second error rate corresponding to a second set of write-to-read delay times at a second end of the range of write-to-read delay times, and determines whether a ratio of the first error rate to the second error rate satisfies a threshold criterion.

Abstract: The disclosure provides a test platform and a redundancy fuse latch analysis method. In a DRAM chip, a first redundant memory cell group is used to repair a failed memory cell group. The DRAM chip performs a write operation for a repaired address corresponding to the failed memory cell group, so as to write identification data corresponding to the repaired address into a second redundant memory cell group actually corresponding to the repaired address. The DRAM chip performs a read operation for a redundancy address corresponding to the repaired address to read the readout data from the first redundant memory cell group corresponding to the redundancy address. The test platform compares the readout data with the identification data to verify whether the first redundant memory cell group corresponding to the redundancy address and the second redundant memory cell group actually corresponding to the repaired address are the same one.

Abstract: A method for testing a circuit includes performing, by a test engine, a test of bit write to a memory. The test includes defining a bit group based on a set of bits from an address of a memory location. The test further includes generating a bit mask for the bit group. The test further includes performing a bit write operation to the address to store a sequence of bits, the sequence of bits selected using a predetermined bit pattern. The test further includes reading content of the address. The test also includes comparing, using the bit mask, only bits corresponding to the bit group from the sequence of bits and from the content of the address.

Abstract: The present technology relates to a memory system and a method of operating the same. The memory system includes a memory device including a plurality of semiconductor memories, and a controller configured to control the memory device to select a victim block based on a fail bit number of some data, among data that is programmed in each of the plurality of semiconductor memories, corresponding to a specific program state, and configured to perform a garbage collection operation on the selected victim blocks.

Abstract: There is provided a decoding circuit including; a first decoding unit that decodes a first signal from a multiplexed signal in which the first signal and a second signal are multiplexed in an LDM (Layered Division Multiplexing) system; and a second decoding unit that decodes the second signal from the multiplexed signal using the decoding result of the decoded first signal, wherein the second signal is selectively decoded based on noise information related to a reception state of the multiplexed signal.

Abstract: A memory device such as a page mode NAND flash including a page buffer, and an input/output interface for I/O data units having an I/O width less than the page width supports continuous page read with non-sequential addresses. A controller controls a continuous page read operation to output a stream of pages at the I/O interface. The continuous read operation includes responding to a series of commands to output a continuous stream of pages. The series of commands including a first command and a plurality of intra-stream commands received before completing output of a preceding page in the stream. The first command includes an address to initiate the continuous page read operation, and at least one intra-stream command in the plurality of intra-stream commands includes a non-sequential address to provide the non-sequential page in the stream of pages.

Abstract: A storage device includes a nonvolatile memory device, a memory controller, and a buffer memory. The memory controller determines a first memory block of the nonvolatile memory device, which is targeted for a read reclaim operation, and reads target data from a target area of the first memory block. The target data are stored in the buffer memory. The memory controller reads at least a portion of the target data stored in the buffer memory in response to a read request corresponding to at least a portion of the target area.