Abstract: A system and method for measuring the degradation of one or more memory devices of a memory sub-system. An example system including a memory controller operatively coupled with a memory device and configured to perform operations comprising: testing different values for a setting of the memory device, wherein the setting of the memory device affects a duty cycle of a signal internal to the memory device; selecting an optimum value for the setting based on access errors during the testing, wherein the optimum value minimizes access errors; determining a degradation measurement for the memory device based on the optimum value; and providing a notification to a host system based on the degradation measurement.

Abstract: Embodiments of the present disclosure provide a scheme for decoding over a small subgraph which highly likely includes some errors. A controller is configured to: control the first decoder to decode the data, read from the memory device, using a parity check matrix for the error correction code; extract one or more subgraphs from the entire bipartite graph of the parity check matrix, which is defined by a plurality of variable nodes and a plurality of check nodes when a particular condition satisfied; and control the second decoder to decode the decoding result of the first decoder using a submatrix of the parity check matrix corresponding to the extracted subgraphs.

Abstract: Scan channel slicing methods and systems for testing of scan chains in an integrated circuit (IC) reduce the number of test cycles needed to effectively test all the scan chains in the IC, reducing the time and cost of testing. In scan channel slicing, rather than loading and unloading into scan chains high-power patterns having numerous switching transitions over the length of each scan chain, loading and unloading the entirety of the scan chain scan while observing it, chain load data is sliced, apportioning between the different scan chains independently observable sections (slices) of transition data in which all four bit-to-bit transitions (“0” to “0”, “0” to “1”, “1” to 0”, “1” to “1”) are ensured to exist. The remainder of the scan chain load data, which is not observed in the test procedure, can be low-transition data that consumes low dynamic power, such as mostly zeroes or mostly ones.

Abstract: Systems, apparatus and methods are provided for loopback testing techniques for memory controllers. A memory controller that may comprise loopback testing circuitry that may comprise a first multiplexer having a first input coupled to an output of an input buffer and a second input coupled to a first data output from the memory controller, an inverter coupled to the output of the input buffer, and a second multiplexer having a first input coupled to an output of the inverter and a second input coupled to a second data output from the memory controller.

Abstract: An example apparatus can include a memory array and control circuitry. The memory array can include a first portion including a first plurality of memory cells. The memory array can further include a second portion including a second plurality of memory cells. The control circuitry can be configured to designate the first portion as active responsive to a determination that the first portion passed a performance test. The control circuitry can be configured to designate the second portion as inactive responsive to a determination that the second portion failed the performance test.

Abstract: A tool for performing a logic built-in self-test of an electronic circuit operating on a clock cycle basis. The tool stores a configurable test signature in a random-access memory together with a pattern counter for a test pattern, wherein a number of the at least one additional signature register corresponds to a number of entries in the random access memory. The tool determines an error based, at least in part, on a compare operation for a given test pattern, wherein the compare operation determines whether the test signature in the first signature register before a capture cycle of a next test pattern differs from the corresponding configurable test signature. The tool stores the error in a corresponding additional signature register.

Abstract: A memory sub-system configured to read soft bit data by adjusting the read voltage applied to read hard bit data from memory cells. For example, in response to a read command identifying a group of memory cells, a memory device is to: read the group of memory cells using a first voltage to generate hard bit data indicating statuses of the memory cells subjected to the first voltage; change (e.g., through boosted modulation) the first voltage, currently being applied to the group of memory cells, to a second voltage and then to a third voltage; reading the group of memory cells at the second voltage and at the third voltage to generate soft bit data (e.g., via an exclusive or (XOR) of the results of reading the group of memory cells at the second voltage and at the third voltage).

Abstract: A method and apparatus for calibrating read threshold for cells of a target wordline (WL) that may be conducted on a die, in a controller connected to a memory die, or both. Voltage values of one or more adjacent WL cells are read, and based on the voltage values of the adjacent cells, cells of the target WL are grouped. A read threshold calibration is carried out on each group. The calibration thresholds are then used for read operations on the cells of each distinct group of the target WL.

Abstract: A random noise generator for generating a plurality of random noise samples per clock cycle, the noise samples having a distribution. The random noise generator comprises at least a first comparator unit and a second comparator unit, the first comparator unit configured to generate a first plurality of samples representing a high-probability part of the distribution and the second comparator unit configured to generate a second plurality of samples representing a low-probability part of the distribution; and a random selection unit connected to at least the first comparator unit and the second comparator unit. The random selection unit is configured to receive the first plurality of samples generated by the first comparator unit and the second plurality of samples generated by the second comparator unit, to output a random selection of samples from the first plurality of samples and the second plurality of samples.

Abstract: A memory device includes a first comparison circuit suitable for comparing read data read from a plurality of memory cells with write data written in the memory cells and outputting a comparison result, a path selection circuit suitable for transferring selected data selected among the read data and test data as read path data based on the comparison result of the first comparison circuit, and an output data alignment circuit suitable for converting the read path data into serial data to output the serial data as output data.

Abstract: The present technology relates to a transmission method and a reception device for securing favorable communication quality in data transmission using an LDPC code. In group-wise interleaving, the LDPC code with a code length N of 17280 bits is interleaved in units of 360-bit bit groups 0 to 47. In group-wise deinterleaving, a sequence of the LDPC code after group-wise interleaving is returned to an original sequence. The present technology can be applied, for example, in a case of performing data transmission using an LDPC code, and the like.

Abstract: A row decoder located on one side of a memory array selectively drives word lines in response to a row address. A word line fault detection circuit located on an opposite side of the first memory array operates to detect an open word line fault between the opposed sides of the memory array. The word line fault detection circuit includes a first clamp circuit that operates to clamp the word lines to ground. An encoder circuit encodes signals on the word lines to generate an encoded address. The encoded address is compared to the row address by a comparator circuit which sets an error flag indicating the open word line fault has been detected if the encoded address does not match the row address.

Abstract: A computer-implemented method includes refreshing a set of memory channels in a memory system substantially simultaneously, each memory channel refreshing a rank that is distinct from each of the other ranks being refreshed. Further, the method includes marking a memory channel from the set of memory channels as being unavailable for the rank being refreshed in the memory channel. In one or more examples, the method further includes blocking a fetch command to the memory channel for the rank being refreshed in the memory channel.

Abstract: A method of data recovery for a distributed storage system is a method of recovering multiple failed nodes concurrently with the minimum feasible bandwidth when failed nodes exist in a distributed storage system. By means of selecting assistant nodes, obtaining helper data sub-blocks through computing the selected assistant nodes, then computing a repair matrix and finally multiple the repair matrix and the helper data sub-blocks, the missing data blocks are reconstructed; or the missing data blocks are reconstructed by decoding. The method is applicable to data recovery in the case of any number of failed nodes and any reasonable combinations of coding parameters. The data recovery herein can reach the theoretical lower limit of the minimum recovery bandwidth.

Abstract: A system and method for optimizing seasoning trim values based on form factors in memory sub-system manufacturing. An example method includes selecting a baseline set of trim values based on a set of memory sub-system form factors; generating a first modified set of trim values by modifying a first trim value of the baseline trim values; instructing each memory sub-system to perform seasoning operations using the first modified set of trim values; responsive to determining that each memory sub-system passed failure scanning operations, generating a second modified set of trim values; instructing each memory sub-system to perform seasoning operations using the second modified set; responsive to determining that a memory sub-system failed the failure scanning operations, determining whether the failed memory sub-system is defective; and responsive to determining that the failed memory sub-system does is not defective, storing the first modified trim values for the set of form factors.

Abstract: The present technology relates to a transmission device, a transmission method, a reception device, and a reception method for securing good communication quality in data transmission using an LDPC code. The LDPC coding is performed on the basis of the parity check matrix of the LDPC code with the code length N of 17280 bits and the coding rate r of 7/16 or 8/16. The LDPC code includes information bits and parity bits, and the parity check matrix includes an information matrix portion corresponding to the information bits and a parity matrix portion corresponding to the parity bits. The information matrix portion is represented by a parity check matrix initial value table, and the parity check matrix initial value table is a table representing positions of elements of 1 of the information matrix for every 360 columns. The present technology can be applied to, for example, data transmission using an LDPC code.

Abstract: A system and method for virtually addressing an array of accelerator tiles of a mixed-signal integrated circuit includes testing each of a plurality of distinct matrix multiply accelerator (MMA) tiles of a grid of MMA tiles, the grid of MMA tiles being defined by the plurality of distinct grid of MMA tiles being arranged in a plurality of rows and a plurality of columns along an integrated circuit, each of the plurality of distinct MMA tiles within the grid of MMA tiles having a distinct physical address on the integrated circuit; identifying one or more defective MMA tiles within the grid of MMA tiles based on the testing; and configuring the grid of MMA tiles with a plurality of virtual addresses for routing data to or routing data from one or more non-defective MMA tiles of grid of MMA tiles based on identifying the one or more defective MMA tiles.

Abstract: Encoding bits with a Q-ary linear error correction code defined over a binary-extension Galois field GF(2k), defined by a quasi-cyclic parity-check matrix comprising: first, second and third circulant sub-matrices comprising respective circulants respectively having first, second and third shifts and defined by first, second and third parameters belonging to the Galois field GF(2k), the second shift equal to a difference between a number of rows of each circulant and the first shift. A first set of parity-check bits is determined according to a fourth circulant having a shift equal to a difference between the number of rows and the first and third shifts and defined by the multiplicative inverse of a product between the first and third parameters, and to the second and third circulant sub-matrices. A second set of parity-check bits is determined according to the first set of parity-check bits and the first and second circulant sub-matrices.

Abstract: An error rate measuring apparatus includes an operation unit that sets one Codeword length and one FEC Symbol length of FEC according to a communication standard of a device under test, data division means for dividing symbol string data obtained by converting a signal received from the device under test into MSB data and LSB data, a data comparison unit that compares each of the divided MSB data and LSB data with error data to detect MSB errors and LSB errors of each one Codeword length, and detects FEC Symbol Errors of each of the MSB data and the LSB data at one FEC Symbol interval, and error counting means for counting the detected MSB errors and LSB errors, and counting the FEC Symbol Errors.

Abstract: Provided is a failure mode analysis method for a memory device including the following steps. A wafer is scanned by a test system to generate a failure pattern of the wafer, and a failure count of a single-bit in the wafer is obtained by a test program. A single-bit grouping table is defined according to a word-line layout, a bit-line layout, and an active area layout. A core group and a gap group are formed through grouping in at least one process in a self-aligned double patterning process. Failure counts of single-bits in the core group and the gap group are respectively counted to generate core failure data and gap failure data.