Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

Abstract: The invention provides method and associated controller for improving temperature adaptability of an amplifier; the method may include: receiving a temperature value, and adjusting a supply voltage supplied to the amplifier according to the temperature value.

Abstract: An operational amplifier includes a single-stage amplifier and a current controller. The single-stage amplifier receives an input signal, and amplifies the input signal to generate an output signal, wherein the single-stage amplifier includes a voltage controlled current source circuit that operates in response to a bias voltage input. The current controller receives the input signal, and generates the bias voltage input according to the input signal. The bias voltage input includes a first bias voltage, a second bias voltage, a third bias voltage, and a fourth bias voltage. None of the first bias voltage, the second bias voltage, the third bias voltage, and the fourth bias voltage is directly set by the input signal of the single-stage amplifier.

Abstract: A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.

Abstract: Disclosed herein is a method including sinking current from a pair of input transistors of a differential amplifier while sourcing more current to the pair of input transistors than is sunk. The method further includes generating a pair of input differential signals using a pair of input voltage regulators, and amplifying a difference between the pair of input differential signals to produce a pair of differential output voltages, using the differential amplifier. The method also includes amplifying the pair of differential output voltages using at least one voltage gain amplifier, and generating control signals for current sources that source the current to the pair of input transistors of the differential amplifier, from the pair of differential output voltages after at least amplification.

Abstract: The present disclosure relates to Class D amplifier circuitry comprising a mode controller configured to dynamically adjust an operational switching mode of the Class D amplifier over a range between a Class AD mode and a Class BD mode.

Abstract: Differential amplifier circuitry including: first and second main transistors of a given conductivity type: and first and second auxiliary transistors of an opposite conductivity type, where the first and second main transistors are connected along first and second main current paths passing between first and second main voltage reference nodes and first and second output nodes, respectively, with their source terminals connected to the first and second output nodes, respectively, and with their gate terminals controlled by component input signals of a differential input signal; and the first and second auxiliary transistors are connected along first and second auxiliary current paths passing between first and second auxiliary voltage reference nodes and the first and second output nodes, respectively, with their drain terminals connected to the first and second output nodes, respectively, and with their gate terminals controlled by the component input signals of the differential input signal.

Abstract: A MOSFET has a current conduction path between source and drain terminals. A gate terminal of the MOSFET receives an input signal to facilitate current conduction in the current conduction path as a result of a gate-to-source voltage reaching a threshold voltage. A body terminal of the MOSFET is coupled to body voltage control circuitry that is sensitive to the voltage at the gate terminal of the MOSFET. The body voltage control circuitry responds to a reduction in the voltage at the gate terminal of the MOSFET by increasing the body voltage of the MOSFET at the body terminal of the MOSFET. As a result, there is reduction in the threshold voltage. The circuit configuration is applicable to amplifier circuits, comparator circuits and current mirror circuits.

Abstract: Gallium nitride based RF transistor amplifiers include a semiconductor structure having a gallium nitride based channel layer and a gallium nitride based barrier layer thereon, and are configured to operate at a specific direct current drain-to-source bias voltage. These amplifiers are configured to have a normalized drain-to-gate capacitance at the direct current drain-to-source bias voltage, and to have a second normalized drain-to-gate capacitance at two-thirds the direct current drain-to-source bias voltage, where the second normalized drain-to-gate capacitance is less than twice the first normalized drain-to-gate capacitance.

Abstract: Systems, methods, and devices relate to tunable baluns for multimode power amplification. For example, a variable-gain amplification system can include a power amplifier configured to provide an amplified signal and to selectively operate in at least a first gain mode and a second gain mode. The variable-gain amplification system can also include a tunable balun circuit configured to receive the amplified signal from the power amplifier and to provide an output signal. The tunable balun circuit can be configured to implement a first turn ratio for the first gain mode and a second turn ratio for the second gain mode.

Abstract: A common-source differential power amplifier comprises a compensation circuit, which comprises a first and a second compensation transistors and two signal terminals, a source and a drain of the first compensation transistor are short-circuited and connected to a gate of the second compensation transistor and one signal terminal of the compensation circuit, the source and the drain of the second compensation transistor are short-circuited and connected to the gate of the first compensation transistor and the other signal terminal of the compensation circuit, the two signal terminals of the compensation circuit are further respectively connected to two differential signal input terminals of the common-source differential power amplifier directly or via a capacitor, where the first and second compensation transistors in the same compensation circuit are both NMOS transistors or both PMOS transistors. An electronic device including the power amplifier is also disclosed.

Abstract: A circuit includes first through fourth transistors and a device. The first transistor has a control input and first and second current terminals. The control input provides a first input to the circuit. The second transistor has a control input and first and second current terminals. The control input provides a second input to the circuit. The third transistor has a control input and first and second current terminals. The fourth transistor has a control input and first and second current terminals. The second current terminal of the fourth transistor is coupled to the second current terminal of the third transistor, and the control input of the fourth transistor is coupled to the first current terminals of the first and second transistors. The device is configured to provide a fixed voltage to the control input of the third transistor.

Abstract: A power amplification system comprises a current source configured to provide a bias current, a current mirror configured to mirror the bias current, and a comparator configured to compare the mirrored bias current to a threshold current and, in response to the mirrored bias current exceeding the threshold current, cause a reduction of output power.

Abstract: Differential amplifier circuitry including: first and second main transistors of a given conductivity type; and first and second auxiliary transistors of an opposite conductivity type, where the first and second main transistors are connected along first and second main current paths passing between first and second main voltage reference nodes and first and second output nodes, respectively, with their source terminals connected to the first and second output nodes, respectively, and with their gate terminals controlled by component input signals of a differential input signal; and the first and second auxiliary transistors are connected along first and second auxiliary current paths passing between first and second auxiliary voltage reference nodes and the first and second output nodes, respectively, with their drain terminals connected to the first and second output nodes, respectively, and with their gate terminals controlled by the component input signals of the differential input signal.

Abstract: Memories for receiving or transmitting voltage signals might include an input or output buffer including a first stage having first and second inputs and configured to generate a current sink and source at its first and second outputs responsive to a voltage difference between its first and second inputs, and a second stage having a first input connected to the first output of the first stage, a second input connected to the second output of the first stage, a first voltage signal node connected to its first input through a first resistance, and a second voltage signal node connected to its second input through a second resistance, wherein a first inverter is connected in parallel with the first resistance, a second inverter is connected in parallel with the second resistance, and a pair of cross-coupled inverters are connected between the first voltage signal node and the second voltage signal node.

Abstract: A power amplifier includes an active device and an output matching circuit operably connected with the active device. The output matching circuit includes a bandpass impedance transformer, in particular, a multimode bandpass impedance transformer. The multimode bandpass impedance transformer may include a multimode resonator and coupling feed lines.

Abstract: A radio frequency (RF) summer circuit having a characteristic impedance Zo comprises first and second ports coupled by first and second resistances, respectively, to a junction. The circuit further comprises a series combination of a third resistance and a switch movable between open and closed positions and an amplifier having input and output terminals and operable in an off state and an on state wherein the series combination is coupled across the input and output terminals of the amplifier between the junction and a third port. The first resistance, second resistance, and the third resistance are all substantially equal to Z0/3. Further, when the switch is moved to the closed position and the amplifier is switched to the off state a passive mode of operation is implemented and when the switch is moved to the open position and the amplifier is switched to the on state an active mode of operation is implemented.

Abstract: A power amplifier circuit includes a first amplifier that amplifies an input signal and outputs an output signal; a second amplifier that, in accordance with a control signal, amplifies a signal corresponding to the input signal, generates a signal having an opposite phase to that of the output signal, and adds the signal to the output signal; and a control circuit that supplies the control signal to the second amplifier. The control circuit outputs the control signal so that during operation of the power amplifier circuit in a first power mode, a gain of the second amplifier is not less than zero and less than a predetermined level and during operation in a second power mode lower than the first power mode in output power level, a gain of the second amplifier is not less than the predetermined level and less than a gain of the first amplifier.

Abstract: A method for controlling gain of a line amplifier on a cable, the method comprising selecting an unused carrier frequency; transmitting a pulsed pilot signal on the unused carrier frequency into the cable; determining a pilot signal output strength by measuring signal strength of the pilot signal after amplification by the line amplifier; comparing the pilot signal output strength with a target signal strength to determine a difference; and adjusting the gain of the line amplifier corresponding to the difference.

Abstract: A differential input stage of a circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. Drains of the first and third transistors couple together at a first node, and drains of the second and fourth transistors couple together at a second node. A first slew boost circuit includes a fifth transistor and a first current mirror. A gate of the fifth transistor couples to the second node. A source of the fifth transistor couples to the first node. The first current mirror couples to the fifth transistor and to the second node. A second slew boost circuit includes a sixth transistor and a second current mirror. A gate of the sixth transistor couples to the first node. A source of the sixth transistor couples to the second node. The second current mirror couples to the sixth transistor and to the first node.