Abstract: A device for determining the concentration of heparin in a fluid sample comprising: a container for holding the fluid sample; a container for holding the dye solution; a mixer for mixing the fluid sample and the dye solution; an illumination source for illuminating a mixture comprising the fluid sample and the dye solution with electromagnetic radiation having a substantially continuous range of wavelengths in the visible range; a detector for detecting the absorption spectrum of the mixture within the substantially continuous range of wavelengths; a recorder for recording the absorption spectrum of the mixture within the substantially continuous range of wavelengths; and a calculator for calculating a spectral parameter.

Abstract: A system for regulating gate oxide layer formation is provided. The system includes one or more light sources, each light source directing light to one or more gate oxide layers being deposited and/or formed on a wafer. Light reflected from the gate oxide layers is collected by a measuring system, which processes the collected light. The collected light is indicative of the thickness and/or uniformity of the respective gate oxide layers on the wafer. The measuring system provides thickness and/or uniformity related data to a processor that determines the thickness and/or uniformity of the respective gate oxide layers on the wafer. The system also includes a plurality of gate oxide layer formers where each gate oxide former corresponds to a respective portion of the wafer and provides for gate oxide layer formation thereon. The processor selectively controls the gate oxide layer formers to regulate gate oxide layer formation on the respective gate oxide layer formations on the wafer.

Abstract: An image pickup apparatus having a higher resolution and S/N ratio by use of a line confocal optical system and a photomask defect inspection system using the same. A first spatial filter having a plurality of slits extending in a direction perpendicular to a direction of movement of a sample is arranged in front of a light source and illuminates the sample with lines of light. The transmitted light or reflected light from the sample is received by an image sensor through a second spatial filter having slits substantially the same as the first spatial filter. Each image sensor has light receiving elements arranged in a two-dimensional array and transfers charges stored in the light receiving elements for each line. A charge transfer speed of the image sensors and speed of movement of the sample are linked with each other. The sample is illuminated a plurality of times, the charge produced by each illumination is accumulated, and the cumulative charge is output.

Abstract: Types of defects on a wafer are discriminated according to defect measurements obtained from a wafer inspection system which includes a plurality of dark field detectors. Using the wafer measurement system, it is determined whether first, second and third conditions are satisfied. The first condition is when a size of a defect on the wafer measured by the wafer inspection system is smaller than a limit value denoting a maximum size of crystal originated particles. The second condition is when a correlation between a plurality of defect light intensity values detected by a plurality of dark field detectors of the wafer measurement system satisfies a reference value. The third condition is when a location of the defect measured by the wafer inspection system is within a vacancy-rich area of the wafer. The type of the defect is then determined to be a crystal originated particle when the first, second and third conditions are all satisfied.

Abstract: Provided is a visual displacement sensor which comprises a laser diode (112) for impinging a line beam onto an object to be measured at a prescribed angle, a two-dimensional CCD (122) for monitoring the object to be measured, on which the line beam is impinged, from a different angle, measurement object range defining means for defining one or more than one measurement object range (K11, K12) within a field of view of the two-dimensional CCD, measurement point coordinate determining means for determining one or more than one measurement point coordinate (A7) contained in the defined measurement object range according to an image captured by the two-dimensional CCD, and displacement measuring means for measuring a desired displacement according to the determined one or more than one measurement point coordinate.

Abstract: A system for regulating nitrided gate oxide layer formation is provided. The system includes one or more light sources, each light source directing light to one or more nitrided gate oxide layers being deposited and/or formed on a wafer. Light reflected from the nitrided gate oxide layers is collected by a measuring system, which processes the collected light. The collected light is indicative of the nitrogen concentration of the respective nitrided gate oxide layers on the wafer. The measuring system provides nitrogen concentration related data to a processor that determines the nitrogen concentration of the respective nitrided gate oxide layers on the wafer. The system also includes one or more nitrided gate oxide layer formers where a nitride gate oxide former corresponds to a respective portion of the wafer and provides for nitrided gate oxide layer formation thereon.

Abstract: A light source produces laser beams that are subjected to frequency modulation whose frequency can be adequately set or varied. A light modulator modulates laser beams with respect to the center wavelength, so that the lower sideband is used as probe light input into one end of the measured optical fiber. A pulse modulator produces laser pulses based on laser beams as pump light, which is input into the other end of the measured optical fiber, along which correlation peaks emerge at different positions. The output light is extracted from the other end of the measured optical fiber and is supplied to a timing adjuster, which adjusts a transmission timing to allow transmission of light proximate to a measuring point in the measured optical fiber therethrough. Thus, it is possible to reliably measure characteristics of the measured optical fiber entirely over the relatively long distance with high spatial resolutions.

Abstract: A method and an apparatus for analyzing line structures during semiconductor wafer processing. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. Film property data from the semiconductor wafer is acquired. Data from a reference library is accessed; the data comprising optical data relating to a line structure formation on a semiconductor wafer, based upon the film property data. The metrology data is compared to data from the reference library. A line structure fault detection analysis is performed in response to the comparison of the metrology data and the reference library data.

Abstract: The object of the invention is a method and an apparatus for optical measurement of a surface profile of a specimen, a series of n images of the specimen being acquired with an image acquisition apparatus in different planes in the z direction of a coordinate system (x, y, z). The image contents of all n images of the resulting image stack are compared to each other in the z direction at each coordinate point (x, y) in order to determine a plane therefrom according to predetermined criteria, assign its plane number (N) to that coordinate point (x, y), and store it in a mask image. The mask image contains all the 3D data of the specimen surface. Processing can be performed using 2D image processing procedures. The 3D information can be quickly and easily retrieved from the mask image. The surface profile can be reconstructed and displayed three-dimensionally.

Abstract: A measurement system is provided that is capable of analyzing light at the input of an optical waveguide of an optical device under test (DUT) and/or at the output of the waveguide, preferably at both. At the input of the waveguide, light having a particular polarization state generated by a polarization controller is output from the polarization controller and coupled into a proximal end of an optical fiber. The measurement system analyzes the polarization state of the light being launched from the opposite, or distal, end of the optical fiber into the waveguide input of the DUT to determine whether and by how much the polarization state of the light has been changed by the optical fiber. The polarization controller is altered, if necessary, to compensate for any changes in the polarization state caused by the optical fiber so that the polarization state of light being launched into the input of the optical fiber is known and is controllable.

Abstract: Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of plates that are formed from a UV grade glass. The PSF may also include a relatively thin first and second ITO layer that results in a sheet resistance between about 100 and about 300 &OHgr; per square.

Abstract: Disclosed are mechanisms for selectively filtering spatial portions of light emanating from a sample under inspection within an optical system. In one embodiment, a programmable spatial filter (PSF) is constructed from materials that are compatible with light in a portion of the UV wavelength range. In a specific implementation, the PSF is constructed from a UV compatible material, such as a polymer stabilized liquid crystal material. In a further aspect, the PSF also includes a pair of plates that are formed from a UV grade glass. The PSF may also include a relatively thin first and second ITO layer that results in a sheet resistance between about 100 and about 300 &OHgr; per square. The PSF provides selective filtering in two directions. In other words, the PSF provides two dimensional filtering.

Abstract: A method and apparatus for detecting properties of reflective transparent surface coatings on a sheet of transparent material, such as a sheet of glass or a sheet of plastic material. One or more light beams are directed at an angle to the surfaces of the material under test and the energy in surface reflections is sensed. The presence and surface location of a surface coating is determined from the relative magnitudes of surface reflections of the light beam. The type of coating is determined from the magnitudes of reflections from the surface coating of one or more different wavelength light beams. The surface coating may be, for example, a Low-E coating, or a metal or metal oxide coating left on a sheet of float glass.

Abstract: The present invention is directed to a method and apparatus for testing a fiber-optic cable. An Optical Time Domain Reflectometer (OTDR) is presented. Test signals are generated from the OTDR and received by the OTDR for processing. The received test signals are sampled and analyzed. The received test signals include reflectance spikes and a slope. A first-order derivative is taken of the received signal. The first-order derivative is then filtered to remove the reflectance spikes and the slope. Discontinuities in the filtered first-order derivative denote a fault in the fiber-optic cable.

Abstract: The present invention relates to a method of determining a thickness of at least one layer on at least one semiconductor wafer (12), comprising the steps of: projecting a first laser pulse (14) on a surface (16) of the at least one layer (10), thereby generating an acoustical wave due to heating of the surface of the at least one layer (10); after a propagation time of the acoustical wave, projecting a series of second laser pulses (18) on the surface (16) of the at least one layer (10); measuring reflected laser pulses (20) of the second laser pulses (18), thereby sensing the times of reflection property changes of the surface (16) of the at least one layer (10); and determining the thickness of the at least one layer (10) by analyzing the times of reflection property changes. The present invention further relates to a system for determining a thickness of a layer (10) on a semiconductor wafer (12).

Abstract: A liquid measuring cell for measuring optical properties of liquids, with a measuring chamber (16), which is adjoined on one side by a transparent window (11), and with a reflector (30) disposed on the opposite side of the measuring chamber (16), which reflects the light striking it toward the outside through the measuring chamber (16) and the window (11), is particularly easy to clean and permits favorably reproducible measurements if another transparent window (33) is disposed between the reflector (30) and the measuring chamber (16) and this window (33) adjoins the measuring chamber (16) on the other side.

Abstract: A device for analyzing plasma enclosed in a chamber. The device has a lens array which has a plurality of lens array lenses. The lens array lenses are located in a position so that the line of sight for each lens array lens intersects one another at a single point in front of the lens array. Each lens array lens is also located in a position so that each lens array lens is focused near a rear wall of the chamber. Behind each lens array lens is a cable having a first end and a second end. The first end of the cable is located in a position to receive emission elements through the lens array lens. A collimating lens is located at the second end of the cable to couple the emission elements from the second end of the cable through a wavelength selective element. A recording device is located in a position to record the emission elements through the wavelength selective element.

Abstract: The surface inspection apparatus according to the present invention obtains images of a test piece by capturing images of the test piece with an image-capturing device while varying at least one apparatus condition (e.g., the wafer tilt angle) through apparatus condition adjustment and determines an optimal setting at which a surface inspection is to be conducted on the test piece based upon the images thus obtained. As a result, the optimal setting for the inspection can be accurately ascertained with ease even when the pitch of a pattern formed at the surface of the test piece is not known, thereby making it possible to perform a surface inspection while sustaining high levels of accuracy and efficiency at all times.

Abstract: The present invention has a configuration in which a line confocal optical system is formed and plural times of illumination by lines of lights are carried out. Particularly, in the present invention, the diffraction grating 32 produces the m×n number of sub beams. Further, the m×n number of sub beams are deflected by the acoustic optical element 33 so that their irradiation areas are to be continuous. Therefore, since the beam carries out scanning using the m×n number of sub beams, scanning can be completed in a short time.

Abstract: An optical measuring device for measuring in a fiber optic network, comprises a measuring unit for performing the measurement in the fiber optic network, a processing unit for processing the measuring results from the measuring unit, and a display for visualizing the processed measuring results. The processing unit further receives imaging signals provided by an imaging unit and processes such imaging signals to be displayed by the display.