Abstract: A metal implant for use in a surgical procedure is provided with a surface layer that is integral with the metal substrate, and which incorporates a biocidal material. The surface layer is grown by anodizing at a voltage between 50 and 150 V, and the biocidal material incorporated in it by ion exchange. This produces a significantly harder surface than anodizing at low voltage, and generates pits containing ion-absorbing material.

Abstract: A method of treating metallic workpieces with an anodizing solution, compositions of the anodizing solution and the coatings prepared with this anodizing solution for anodizing metallic surfaces, especially surfaces of magnesium, magnesium alloys, aluminum and aluminum alloys, are disclosed. The compositions are basic aqueous solutions comprising a water-soluble inorganic hydroxide, phosphorus and oxygen containing anions, at least one surfactant and an alkaline buffer based on at least one alkaline hydrolyzed silane, on at least one alcohol showing at least one alkaline radical group or on a mixture of them.

Abstract: A metal implant for use in a surgical procedure is provided with a surface layer that is integral with the metal substrate, and which incorporates a biocidal material. The surface layer may be grown from the metal substrate, by anodizing, and the biocidal material incorporated in it by ion exchange. Alternatively the layer may be deposited by electroplating, followed by diffusion bonding so as to become integral with the metal substrate. In either case, silver is a suitable biocidal material; and both the release rate and the quantity of biocidal material should be low to avoid toxic effects on body cells. Electropolishing the surface before formation of the surface layer is also beneficial, and this may be achieved by electropolishing.

Abstract: A patterned magnetic recording medium, accessible by a magnetic recording head, including a plurality of tracks, a width direction of each track and that of the magnetic recording head being of a skew angle. The patterned magnetic recording medium includes a plurality of magnetic dots, each corresponding to a recording bit, formed on a non-magnetic material. The plurality of magnetic dots are arranged in a plurality of arrays, each array corresponding to one of the tracks. Every N adjacent magnetic dots of the array define a polygon, one side thereof being parallel to the corresponding track, and another side thereof being parallel to a direction corresponding to the skew angle of the corresponding track.

Abstract: A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.

Abstract: Metal objects are treated by anodising the metal object in contact with an acidic solution, and then subjecting the anodised metal object to a reversed voltage (compared to the anodising voltage). The thus-treated metal object is then contacted with a biocidal metal-containing solution. Biocidal metal is deposited on the surface of the metal object, resulting in improved biocidal properties.

Abstract: An electrochemical method for producing a hole extraction layer in a solar cell based on organic semiconductor materials. Conjugated polymers are used to build a hole extraction layer and a photoactive layer. Poly(3,4-ethylenedioxythiophene) (PEDOT) is used as a hole extraction layer and is deposited electrochemically from an aqueous solution on an indium tin oxide (ITO) electrode. A nanofibrilar or nanogranular morphology of the PEDOT is achieved by carrying out the polymerization in the presence of a surfactant. A photoactive layer of poly(3-hexylthiophene)/[6,6]-phenyl-C61-butyric acid methyl ester (P3HT/PCBM) can be deposited by spin-coating technique on top of the PEDOT layer.

Abstract: Disclosed herein is an electric Al or Al alloy plating bath which comprises (A) an aluminum halide; (B) one kind of compound or at least two kinds of compounds selected from the group consisting of N-alkylpyridinium halides, N-alkylimidazolium halides, N,N?-alkylimidazolium halides, N-alkyl-pyrazolium halides, N,N?-alkylpyrazolium halides, N-alkylpyrrolidinium halides and N,N-alkyl-pyrrolidinium halides; and (C) a high boiling point aromatic hydrocarbon solvent, wherein the molar ratio of the aluminum halide (A) to the compound (B) ranges from 1:1 to 3:1 and the flash point of the plating bath is not less than 50° C. The plating bath never involves any risk of causing an explosion, can be handled industrially with safety and can provide a smooth and fine Al of Al alloy plated film.

Abstract: A process is provided for roughening both sides of a copper plate by forming protrusions with fine bump shapes on both sides of the copper plate in an electroplating solution for plating copper while reducing deterioration of the electroplating solution. Opposed pairs of negative electrodes (3c) and positive electrodes (3a) are provided in an electroplating copper solution (2), and a copper plate (4) is arranged between the pair of negative electrodes (3c). An anodic treatment for generating copper fine particles on both surfaces of the copper plate (4) is carried out by performing an electrolytic process for three to ten minutes with the copper plate (4) as a positive electrode between the negative electrodes (3c).

Abstract: A method for forming a ZrO2 oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrO2 film on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: Described are apparatus and methods for electroplating one or more metals onto a substrate. Embodiments include electroplating apparatus configured for, and methods including, efficient mass transfer during plating so that highly uniform plating layers are obtained. In specific embodiments, the mass transfer is achieved using a combination of impinging flow and shear flow at the wafer surface.

Abstract: The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: a container (10) intended to contain an electrolyte (E), a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), a counter-electrode (30) arranged in the container (10), illumination means (50) comprising a source (51) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction.

Abstract: The invention relates to a method for grafting an organic film onto an electrically conductive or semiconductive surface by electro-reduction of a solution, wherein the solution comprises one diazonium salt and one monomer bearing at least one chain polymerizable functional group. During the electrolyzing process, at least one protocol consisting of an electrical polarization of the surface by applying a variable potential over at least a range of values which are more cathodic that the reduction or peak potential of all diazonium salts in said solution is applied. The invention also relates to an electrically conducting or semiconducting surface obtained by implementing this method. The invention further relates to electrolytic compositions.

Abstract: A method for electroplating aluminum metal on a magnesium alloy includes providing an Lewis acidic ionic liquid having dissolved species of an aluminum metal salt; pre-treating a surface of the magnesium alloy including subjecting the surface of the magnesium alloy to a reverse current etching in the ionic liquid; electroplating the aluminum metal on the surface using the ionic liquid as the electrolyte; and subjecting the surface of the magnesium alloy to a post-treatment including neutralization rinsing in a rinsing solvent solution.

Abstract: Methods for producing a high temperature oxidation resistant coating on a superalloy component and the coated superalloy component produced thereby are provided. Aluminum or an aluminum alloy is applied to at least one surface of the superalloy component by electroplating in an ionic liquid aluminum plating bath to form a plated component. The plated component is heat treated at a first temperature of about 600° C. to about 650° C. and then further heat treated at a second temperature of about 700° C. to about 1050° C. for about 0.50 hours to about two hours or at a second temperature of about 750° C. to about 900° C. for about 12 to about 20 hours.

Abstract: An antireflection film of the present invention includes a plurality of first raised portions, each of which has a two-dimensional size of not less than 1 ?m and less than 100 ?m when seen in a direction normal to the film, and a plurality of second raised portions, each of which has a two-dimensional size of not less than 10 nm and less than 500 nm when seen in a direction normal to the film. In at least one embodiment, the antireflection film has a first surface shape or a second surface shape that is inverse to the first surface shape relative to a film surface. In the first surface shape, the second raised portions are provided on the first raised portions and between the plurality of first raised portions, and the elevation angle ? of a surface of the first raised portions relative to the film surface is about 90° or more. The antireflection film of the present invention has a more excellent antiglare function than conventional ones.

Abstract: An alumina nanohole array and a method of fabricating the same includes the steps of forming an aluminum thin-film on a substrate at a substrate temperature of ?80° C. or below so that crystal grain growth is suppressed, even when a high-purity aluminum material is used, thus providing improved surface smoothness; and anodizing the aluminum thin-film. Preferably, the method additionally includes texturing by pressing a mold having an orderly array of projections against the aluminum thin-film to form pits on the aluminum thin-film which enables a larger array area to be formed. When the mold and the aluminum thin-film are held at a temperature of 150 to 200° C., the pressure used for pit formation is reduced. A magnetic recording medium manufactured by a method therefore includes forming a magnetic layer within the nanoholes so that the medium is suitable as a bit patterned media for a perpendicular recording system.

Abstract: A method of fabricating a motheye mold according to the present invention includes the steps of: (a) anodizing a surface of an aluminum film (10a) via an electrode (32a) that is in contact with the surface, thereby forming a porous alumina layer which has a plurality of very small recessed portions; (b) after step (a), allowing the porous alumina layer to be in contact with an etchant, thereby enlarging the very small recessed portions of the porous alumina layer; and (c) after step (b), further anodizing the surface to grow the plurality of very small recessed portions. The aluminum film is made of aluminum with a purity of 99.99 mass % or higher. The electrode includes a first electrode portion (32a1) which is made of aluminum with a purity of 99.50 mass % or lower and a second electrode portion (32a2) which is made of aluminum with a higher purity than the aluminum of the first electrode portion and which is interposed between the surface and the first electrode portion.

Abstract: A method for enhancing the solderability of a metallic surface is disclosed where the metallic surface is plated with an immersion silver plate prior to soldering, which immersion silver plate is treated with an additive selected from the group consisting of fatty amines, fatty amides, quaternary salts, amphateric salts, resinous amines, resinous amides, fatty acids, resinous acids, ethoxylated derivatives of any of the foregoing, and mixtures of any of the foregoing. The immersion silver deposits created are resistant to electromigration.