Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An electronic apparatus includes a substrate and an electrical element mounted on the substrate. The electrical element includes a base material including a first principal surface and a second principal surface that are deformable and flat or substantially flat surfaces and a conductor pattern included on the base material. The electrical element further includes a first connection portion and a second connection portion that connect to a circuit included on the substrate and a transmission line portion located in a position different from positions of the first connection portion and the second connection portion that electrically connects the first connection portion and the second connection portion. The conductor pattern includes a conductor pattern of the first connection portion, a conductor pattern of the second connection portion, a conductor pattern of the transmission line portion, and an electrical-element-side bonding pattern arranged in the transmission line portion.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: Disclosed herein is a remote control apparatus for performing wireless communication with an electronic device, the remote control apparatus including: a reader/writer configured to read and/or write information from or to an information storage medium; and a transmission/reception section configured to transmit and receiving a signal to or from the electronic device via the wireless communication, wherein the transmission/reception section uses the same wireless communication system for both transmission of an operation instruction to the electronic device and transmission of information read from the information storage medium and reception from the electronic device of information to be written to the information storage medium.

Abstract: A communication system is provided which implements more comfortable user operation where an electric apparatus which is remotely controlled by a remote controller (remote control apparatus) carries out processing operation in which an information recording medium is used. Remote controller data, remote controller controlling commands and reader/writer commands are placed into and transmitted by command data cmdDATA in packets of the same format. Further, reader/writer command data rwDATA and a reader/writer communication footer (parity for an error check and so forth) rwFT which have a longer data length are divided and placed divisionally into and transmitted together with the command data cmdDATA in communication packets. The transmitted data are received and merged.

Abstract: A remote control apparatus for communicating with an electric apparatus by radio communication is provided. The remote control apparatus includes a reader/writer for carrying out reading out and writing of information from and into an information recording medium; a transmission/reception section configured to transfer a signal to and from the electric apparatus by the radio communication; and a control section having a power control function for controlling the power of the reader/writer; the control section controlling the reader/writer to the low power consumption state when the power supply to the remote control apparatus is made available.

Abstract: A portable file server includes a radio field intensity input unit, a current controller, and an antenna. A radio field intensity for use in wireless communication between the portable file server and a terminal through the antenna is inputted to the radio field intensity input unit. The current controller increases or decreases the amount of signal current for data to be transmitted to the terminal in accordance with the radio field intensity inputted to the radio field intensity input unit. The signal current is, in turn, outputted to the antenna. Thus, the radio field intensity is controlled such that the radio waves can be received only in the area where wireless communication between the portable file server and the terminal takes place; thus, unauthorized wireless access from outside of this area will be prevented. Hence, the portable file server provides enhanced security.

Abstract: Disclosed herein is a remote control apparatus for communicating with an electric apparatus by radio communication, including: a plurality of operation keys; a transmission/reception section for transferring a signal to and from the electric apparatus by the radio communication; and a control section having at least a power control function for controlling the power of the remote control apparatus; the control section controlling the transmission/reception section to a normal power state until a predetermined period of time elapses after a signal is inputted thereto by an input of any of the operation keys to enable transfer of a signal from the electric apparatus by the transmission/reception section, the control section controlling the transmission/reception section to a low power consumption state after the predetermined period of time elapses.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A communication apparatus includes a signal detector that detects incoming (i.e., receives) information from a signal received wirelessly. The signal detector includes a wave detector, an equalizer, and a detector. The wave detector accepts an incoming signal wherein information is modulated onto a carrier signal, analyzes the envelope variation of the incoming signal, and generates a detection signal containing the incoming information. The equalizer corrects the detection signal and outputs a corrected detection signal. The detector then detects the incoming information from the corrected detection signal.

Abstract: A remote control apparatus for remotely operating an electronic device. The remote control apparatus including: an operation section having a plurality of operation keys; and a reader/writer configured to read and/or write information from or to an information storage medium, wherein in said operation section, at least one of the plurality of operation keys is arranged so as to overlap a read/write portion of said reader/writer, the read/write portion being used for the reading and/or writing of the information from or to the information storage medium.

Abstract: Disclosed is a semiconductor device fabricating method. A substrate is provided thereon with: an inorganic insulating film; a first inorganic sacrifice film stacked on the inorganic insulating film and having components different from those of the inorganic insulating film; a second sacrifice film formed of an inorganic insulative film stacked on the first sacrifice film, wherein a pattern for forming grooves for wiring embedment is formed in the second sacrifice film; and an organic layer including a photoresist film, wherein a pattern for forming holes for wiring embedment is formed in the organic film. According to the present invention, the thickness of the organic layer is set to be greater than the sum of the thicknesses of etch target films, i.e., the insulating film, the first sacrifice film and the second sacrifice film; the etch target films are etched in a selectivity-less manner by using plasma generated from a mixed gas of CF4 gas and CHF3 gas.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A communication system is provided which implements more comfortable user operation where an electric apparatus which is remotely controlled by a remote controller (remote control apparatus) carries out processing operation in which an information recording medium is used. Remote controller data, remote controller controlling commands and reader/writer commands are placed into and transmitted by command data cmdDATA in packets of the same format. Further, reader/writer command data rwDATA and a reader/writer communication footer (parity for an error check and so forth) rwFT which have a longer data length are divided and placed divisionally into and transmitted together with the command data cmdDATA in communication packets. The transmitted data are received and merged.

Abstract: A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.