Abstract: It has been found that an organic component is emitted from a member such as a crucible or a gasket constituting an apparatus for vacuum treatment and an element is contaminated with said organic component emitted, and, as a result, members of the apparatus for vacuum treatment are subjected to a treatment for reducing the emission of an organic component. For example, a crucible is made from a material having a reduced catalytic activity to a material for use in the vapor deposition in question and a gasket is used after a treatment for reducing the bleeding of an organic component or is made from a material containing a reduced amount of an organic component.

Abstract: A visible light-reflecting member is disclosed which uses a plate or a film for reflecting visible lights, whose reflective surface is provided with an aluminum thin film having an aluminum purity of not less than 99 mass % and an X-ray diffraction pattern wherein, among peak intensities ascribed to aluminum, the peak intensity ascribed to the (111) plane is higher than the total of the other peak intensities.

Abstract: A thermoelectric conversion module includes a first insulated substrate formed in a plate shape, a second insulated substrate formed in a plate shape, the first insulated substrate and the second insulated substrate are provided so as to be paired, plural thermoelectric elements provided between the insulated substrates so as to be joined thereto, a first object joined to the first insulated substrate in a manner where the first object is cooled and a second object joined to the second insulated substrate in a manner where the second object is heated, wherein a thickness of the first insulated substrate is set on the basis of a linear expansion of the first object, and a thickness of the second insulated substrates is set on the basis of a linear expansion of the second object.

Abstract: It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments. According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.

Abstract: The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.

Abstract: A diaphragm valve 1 is provided with a body 2 having a flow-in passage 6, a flow-out passage 7, and a valve seat 8 formed between the passages; a diaphragm 3 installed in the body 2 and permitted to rest on and move away from the valve seat 8; and a driving means 4 installed on the body 2 to allow the diaphragm 3 to rest on and move away from the valve seat 8, wherein synthetic resin films 5 of predetermined thickness are coated on fluid-contacting parts 25 of the afore-mentioned body 2 and diaphragm 3. A diaphragm valve in accordance with the present invention prevents corrosion of the valve members caused by accumulation and adherence of substances produced by thermal decomposition, and prevents clogging caused by substances produced, and prevents seat leakage when applied in the vacuum exhaust system of a semiconductor manufacturing facility.

Abstract: A circuit board (100) having an insulator layer and a conductor (104) buried in the insulator layer, wherein the insulator layer has a first insulator (101) satisfying a relation ?r??r, assuming ?r is the dielectric constant and ?r is the relative permeability, and the conductor is substantially surrounded by the first insulator.

Abstract: A specified metal member included among the components of a valve, coupling or like fluid handling part for use in piping and fluid control devices is made of an alloy comprising, in % by weight, 0.001 to 0.01% of C, up to 5% of Si, up to 2% of Mn, up to 0.03% of P, up to 100 ppm of S, up to 50 ppm of O, 18 to 25% of Cr, 15 to 25% of Ni, 4.5 to 7.0% of Mo, 0.5 to 3.0% of Cu, 0.1 to 0.3% of N, and the balance substantially Fe and other inevitable impurities, the alloy having a CRI (crevice corrosion resistance index) value in the range of 40?CRI?55, as determined from the expression CRI=[Cr]+4×[Mo]+30×[N] wherein the amount of alloy components present in combination in the alloy to ensure crevice corrosion resistance are expressed in % by weight.

Abstract: A data storage system comprises a temporary cache for temporarily storing data, a permanent cache for storing data for a predetermined period, and a memory selector for selectively having the temporary cache and the permanent cache store the data received by a terminal communicator. A data sorter sorts the data into temporary cache data to be stored in the temporary cache and permanent cache data to be stored in the permanent cache. In this way, it may be unnecessary to confirm whether or not the permanent cache data is updated in the permanent cache may be eliminated.

Abstract: A dielectric resonator antenna which emits an electric wave by having a dielectric body resonate is disclosed. A magnetic material is contained in the electric body, thereby increasing the relative permeability to more than 1 and lowering the relative permittivity. Consequently, the Q-value of the resonance can be lowered while maintaining the rate of wavelength shortening. With this technique, a broadband dielectric resonator antenna can be realized.

Abstract: A specified metal member (e.g., a bolt) 5 included among a plurality of components 2, 3, 4, 5, 6 of a fluid handling part and having a surface exposed on an exterior of the fluid handling part is made of an alloy comprising, in % by weight, 0.001 to 0.01% of C, up to 5% of Si, up to 2% of Mn, up to 0.03% of P, up to 100 ppm of S, up to 50 ppm of O, 18 to 25% of Cr, 15 to 25% of Ni, 4.5 to 7.0% of Mo, 0.5 to 3.0% of Cu, 0.1 to 0.3% of N, and the balance substantially Fe and other inevitable impurities.

Abstract: A fluid control device 1 comprises a metal body 2 having a fluid inlet channel 2a, a fluid outlet channel 2b and a communication channel 2c for holding the two channels in communication, and a metal slide member 3 vertically movable in a vertical passage 11 including the communication channel 2c for closing or opening the communication channel 2c with an end portion thereof. At least the end portion 3a of the slide member 3 is made of an alloy comprising, in % by weight, 0.001 to 0.01% of C, up to 5% of Si, up to 2% of Mn, up to 0.03% of P, up to 100 ppm of S, up to 50 ppm of O, 18 to 25% of Cr, 15 to 25% of Ni, 4.5 to 7.0% of Mo, 0.5 to 3.0% of Cu, 0.1 to 0.3% of N, and the balance substantially Fe and other inevitable impurities.

Abstract: A cold cathode fluorescent tube where an electron emitting electrode is sealed in shows much deterioration in the luminance with time, thereby being not adequate for a long time use. The electrode emitting electrode is formed in such a shape that an electric field is not locally concentrated. By mixing a material of high heat conductivity, such as tungsten, as the material for the electron emitting electrode or using helium of high heat conductivity as the sealing gas, a long life of the cold cathode fluorescent tube is achieved.

Abstract: A pipe coupling 30 comprises a tubular body 31 for a pipe 32 to be inserted in through the rear end thereof, a front ring 33 and a back ring 34 to be fitted around the pipe 32 projecting from the rear end of the body 31, and a cap nut 35 for tightening up the front and back rings 33, 34 to fix the pipe 32 to the body 31. The back ring 34 is made of an alloy comprising, in % by weight, 0.001 to 0.01% of C, up to 5% of Si, up to 2% of Mn, up to 0.03% of P, up to 100 ppm of S, up to 50 ppm of O, 18 to 25% of Cr, 15 to 25% of Ni, 4.5 to 7.0% of Mo, 0.5 to 3.0% of Cu, 0.1 to 0.3% of N, and the balance substantially Fe and other inevitable impurities.

Abstract: A reactor for generating moisture wherein ignition of hydrogen gas, backfire to the gas supply source side, the peeling off of the platinum coat catalyst layer inside are prevented more completely to further increase the safety of the reactor for generating moisture and wherein the dead space in the interior space is reduced to further reduce the size of the reactor shell.

Abstract: A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.

Abstract: A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost. The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (Al2O3)-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.

Abstract: A reactor for generating moisture wherein ignition of hydrogen gas, backfire to the gas supply source side, and the peeling off of the platinum coat catalyst layer inside are all prevented more completely to further increase the safety of the reactor for generating moisture, and wherein the dead space in the interior space is reduced to further reduce the size of the reactor shell. The reactor has a reactor shell A with an interior space; a reflector on an inlet side facing a gas feed port in the interior space of the reactor; a reflector on an outlet side facing a moisture gas take-out port in the interior space; and a platinum coat catalyst layer 8 formed on an inside wall of a reactor structural component on the outlet side. Hydrogen and oxygen fed into the interior space of the reactor react without combustion.

Abstract: It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments. According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.

Abstract: A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.