Patents by Inventor Anirudha V. Sumant
Anirudha V. Sumant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180171251Abstract: A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.Type: ApplicationFiled: January 10, 2018Publication date: June 21, 2018Applicant: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Ali Erdemir, Junho Choi, Diana Berman
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Publication number: 20180155844Abstract: A continuous or semi-continuous process for fabricating nanowires or microwires makes use of the substantially planar template that may be moved through electrochemical solution to grow nanowires or microwires on exposed conductive edges on the surface of that template. The planar template allows fabrication of the template using standard equipment and techniques. Adhesive transfer may be used to remove the wires from the template and in one embodiment to draw a continuous wire from the template to be wound around the drum.Type: ApplicationFiled: January 16, 2018Publication date: June 7, 2018Applicant: UCHICAGO ARGONNE, LLCInventors: Anirudha V. Sumant, Michael Zach, Alan David Marten
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Patent number: 9991512Abstract: A thermally conductive electrochemical cell comprises a lithium ion-containing liquid electrolyte contacting a cathode and anode. The cathode and anode are in the form of electroactive sheets separated from each other by a membrane that is permeable to the electrolyte. One or more of the cathode and anode comprises two or more layers of carbon nanotubes, one of which layers includes electrochemically active nanoparticles and/or microparticles disposed therein or deposited on the nanotubes thereof. The majority of the carbon nanotubes in each of the layers are oriented generally parallel to the layers. Optionally, one or more of the layers includes an additional carbon material such as graphene, nanoparticulate diamond, microparticulate diamond, and a combination thereof.Type: GrantFiled: July 2, 2015Date of Patent: June 5, 2018Assignee: UCHICAGO ARGONNE, LLCInventors: Elena Shevchenko, Anirudha V. Sumant, Alexander Balandin, Bonil Koo, Christopher Johnson, Tijana Rajh, Eungje Lee
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Patent number: 9903033Abstract: A continuous or semi-continuous process for fabricating nanowires or microwires makes use of the substantially planar template that may be moved through electrochemical solution to grow nanowires or microwires on exposed conductive edges on the surface of that template. The planar template allows fabrication of the template using standard equipment and techniques. Adhesive transfer may be used to remove the wires from the template and in one embodiment to draw a continuous wire from the template to be wound around the drum.Type: GrantFiled: July 23, 2013Date of Patent: February 27, 2018Assignee: UChicago Argonne LLCInventors: Anirudha V. Sumant, Michael Zach, Alan David Marten
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Publication number: 20180053827Abstract: A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.Type: ApplicationFiled: August 18, 2016Publication date: February 22, 2018Inventors: Anirudha V. Sumant, Kiran Kumar Kovi
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Patent number: 9890345Abstract: A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.Type: GrantFiled: July 18, 2013Date of Patent: February 13, 2018Assignee: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Ali Erdemir, Junho Choi, Diana Berman
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Patent number: 9875894Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.Type: GrantFiled: December 8, 2014Date of Patent: January 23, 2018Assignee: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Diana Berman
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Publication number: 20170372896Abstract: A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.Type: ApplicationFiled: August 14, 2017Publication date: December 28, 2017Inventors: Anirudha V. SUMANT, Adam KHAN
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Patent number: 9842958Abstract: A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.Type: GrantFiled: October 31, 2016Date of Patent: December 12, 2017Assignees: UChicago Argonne, LLC, Brookhaven Science Associates, LLC, The Research Foundation for the State University of New YorkInventors: Anirudha V. Sumant, John Smedley, Erik Muller
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Patent number: 9741561Abstract: A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.Type: GrantFiled: July 10, 2015Date of Patent: August 22, 2017Assignee: UCHICAGO ARGONNE, LLCInventors: Anirudha V. Sumant, Adam Khan
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Patent number: 9696222Abstract: A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.Type: GrantFiled: August 8, 2016Date of Patent: July 4, 2017Assignee: UCHICAGO ARGONNE, LLCInventors: Anirudha V. Sumant, Xinpeng Wang
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Publication number: 20170120293Abstract: A low friction wear surface with a coefficient of friction in the superlubric regime including graphene and nanoparticles on the wear surface is provided, and methods of producing the low friction wear surface are also provided. A long lifetime wear resistant surface including graphene exposed to hydrogen is provided, including methods of increasing the lifetime of graphene containing wear surfaces by providing hydrogen to the wear surface.Type: ApplicationFiled: January 17, 2017Publication date: May 4, 2017Inventors: Anirudha V. Sumant, Diana Berman, Ali Erdemir
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Publication number: 20170047468Abstract: A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.Type: ApplicationFiled: October 31, 2016Publication date: February 16, 2017Applicants: Brookhaven Science Associates, LLC, UChicago Argonne, LLC, The Research Foundation for the State University of New YorkInventors: Anirudha V. Sumant, John Smedley, Erik Muller
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Patent number: 9561526Abstract: A low friction wear surface with a coefficient of friction in the superlubric regime including graphene and nanoparticles on the wear surface is provided, and methods of producing the low friction wear surface are also provided. A long lifetime wear resistant surface including graphene exposed to hydrogen is provided, including methods of increasing the lifetime of graphene containing wear surfaces by providing hydrogen to the wear surface.Type: GrantFiled: June 19, 2014Date of Patent: February 7, 2017Assignee: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Diana Berman, Ali Erdemir
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Patent number: 9548394Abstract: A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.Type: GrantFiled: April 21, 2015Date of Patent: January 17, 2017Assignee: UChicago Argonne, LLCInventors: Saptarshi Das, Anirudha V. Sumant, Andreas Roelofs
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Publication number: 20170011914Abstract: A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.Type: ApplicationFiled: July 10, 2015Publication date: January 12, 2017Applicant: UCHICAGO ARGONNE, LLCInventors: Anirudha V. Sumant, Adam Khan
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Publication number: 20160349125Abstract: A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.Type: ApplicationFiled: August 8, 2016Publication date: December 1, 2016Applicant: UCHICAGO ARGONNE, LLCInventors: Anirudha V. Sumant, Xinpeng Wang
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Publication number: 20160332885Abstract: A method for coating a dielectric substrate with a R-GO film includes positioning the dielectric substrate in a chamber which is purged with a first gas to adjust a pressure of the chamber to a first pressure. A second gas at a second flow rate and a third gas at a third flow rate is inserted into the chamber to increase the chamber pressure to a second pressure greater than the first pressure. A chamber temperature is increased to a first temperature. The flow of the second gas and the third gas is stopped. The chamber is purged to a third pressure higher than the first pressure and lower than the second pressure. The pressure of the chamber is set at a fourth pressure greater than the first pressure and the third pressure. A fourth gas is inserted into the chamber at a fourth flow rate for a first time.Type: ApplicationFiled: May 13, 2015Publication date: November 17, 2016Applicant: UCHICAGO ARGONNE, LLCInventors: Anirudha V. Sumant, Richard Gulotty
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Patent number: 9484474Abstract: A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.Type: GrantFiled: July 2, 2015Date of Patent: November 1, 2016Assignees: UChicago Argonne, LLC, Brookhaven Science Associates, LLC, The Research Foundation for the State University of New YorkInventors: Anirudha V. Sumant, John Smedley, Erik Muller
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Patent number: 9475690Abstract: Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.Type: GrantFiled: May 20, 2014Date of Patent: October 25, 2016Assignee: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Federico Buja, Willem Merlijn van Spengen