Patents by Inventor Anirudha V. Sumant

Anirudha V. Sumant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160308263
    Abstract: A thermally conductive electrochemical cell comprises a lithium ion-containing liquid electrolyte contacting a cathode and anode. The cathode and anode are in the form of electroactive sheets separated from each other by a membrane that is permeable to the electrolyte. One or more of the cathode and anode comprises two or more layers of carbon nanotubes, one of which layers includes electrochemically active nanoparticles and/or microparticles disposed therein or deposited on the nanotubes thereof. The majority of the carbon nanotubes in each of the layers are oriented generally parallel to the layers. Optionally, one or more of the layers includes an additional carbon material such as graphene, nanoparticulate diamond, microparticulate diamond, and a combination thereof.
    Type: Application
    Filed: July 2, 2015
    Publication date: October 20, 2016
    Inventors: Elena SHEVCHENKO, Anirudha V. SUMANT, Alexander BALANDIN, Bonil KOO, Christopher JOHNSON, Tijana RAJH, Eungje LEE
  • Patent number: 9441940
    Abstract: A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.
    Type: Grant
    Filed: January 21, 2015
    Date of Patent: September 13, 2016
    Assignee: UCHICAGO ARGONNE, LLC
    Inventors: Anirudha V. Sumant, Xinpeng Wang
  • Patent number: 9418814
    Abstract: A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
    Type: Grant
    Filed: January 12, 2015
    Date of Patent: August 16, 2016
    Assignee: UCHICAGO ARGONNE, LLC
    Inventors: Anirudha V. Sumant, Sergey V. Baryshev, Sergey P. Antipov
  • Publication number: 20160209199
    Abstract: A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.
    Type: Application
    Filed: January 21, 2015
    Publication date: July 21, 2016
    Applicant: UChicago Argonne, LLC
    Inventors: Anirudha V. Sumant, Xinpeng Wang
  • Publication number: 20160203937
    Abstract: A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
    Type: Application
    Filed: January 12, 2015
    Publication date: July 14, 2016
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anirudha V. Sumant, Sergey V. Baryshev, Sergey P. Antipov
  • Publication number: 20160101974
    Abstract: Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.
    Type: Application
    Filed: May 20, 2014
    Publication date: April 14, 2016
    Applicant: UChicago Argonne, LLC
    Inventors: Anirudha V. Sumant, Federico Buja, Willem Merlijn van Spengen
  • Patent number: 9299526
    Abstract: A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters. This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube “forest” (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: March 29, 2016
    Assignees: UChicago Argonne, LLC, The Curators of the University of Missouri
    Inventors: Anirudha V. Sumant, Ralu Divan, Chrystian M. Posada, Carlos H. Castano, Edwin J. Grant, Hyoung K. Lee
  • Patent number: 9269519
    Abstract: An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: February 23, 2016
    Assignee: UChicago Argonne, LLC
    Inventors: Anirudha V. Sumant, Orlando H. Auciello, Derrick C. Mancini
  • Publication number: 20150367381
    Abstract: A low friction wear surface with a coefficient of friction in the superlubric regime including graphene and nanoparticles on the wear surface is provided, and methods of producing the low friction wear surface are also provided. A long lifetime wear resistant surface including graphene exposed to hydrogen is provided, including methods of increasing the lifetime of graphene containing wear surfaces by providing hydrogen to the wear surface.
    Type: Application
    Filed: June 19, 2014
    Publication date: December 24, 2015
    Inventors: Anirudha V. Sumant, Diana Berman, Ali Erdemir
  • Patent number: 9202684
    Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: December 1, 2015
    Assignee: UChicago Argonne, LLC
    Inventors: Anirudha V. Sumant, Alexander Balandin
  • Publication number: 20150311022
    Abstract: An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
    Type: Application
    Filed: June 5, 2015
    Publication date: October 29, 2015
    Applicant: UChicago Argonne, LLC
    Inventors: Anirudha V. Sumant, Orlando H. Auciello, Derrick C. Mancini
  • Publication number: 20150295134
    Abstract: A system and method for transparent diamond semiconductor electronics are provided. The system may include a transparent substrate, a diamond active layer, a conductive layer, and an application that incorporates the transparent layer, the diamond layer, and the conductive layer. The method may include selecting a transparent substrate, creating a diamond material having a diamond lattice on the substrate, introducing acceptor dopant atoms to the diamond lattice to create ion tracks, introducing substitutional dopant atoms, annealing the diamond lattice, adding a conductive layer to the diamond lattice, and incorporating the substrate, and the diamond lattice, and the conductive layer into an application.
    Type: Application
    Filed: April 9, 2015
    Publication date: October 15, 2015
    Inventors: Adam Khan, Anirudha V. Sumant, Kostas Kostopolous
  • Publication number: 20150206748
    Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
    Type: Application
    Filed: December 8, 2014
    Publication date: July 23, 2015
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anirudha V. Sumant, Diana Berman
  • Publication number: 20150197701
    Abstract: A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.
    Type: Application
    Filed: July 18, 2013
    Publication date: July 16, 2015
    Applicant: UChicago Argonne, LLC
    Inventors: Anirudha V. Sumant, Ali Erdemir, Junho Choi, Diana Berman
  • Patent number: 8963659
    Abstract: The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: February 24, 2015
    Inventors: Charles L. Goldsmith, Orlando H. Auciello, Anirudha V. Sumant, Derrick C. Mancini, Chris Gudeman, Suresh Sampath, John A. Carlilse, Robert W. Carpick, James Hwang
  • Patent number: 8906772
    Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: December 9, 2014
    Assignee: UChicago Argonne, LLC
    Inventor: Anirudha V. Sumant
  • Publication number: 20140147994
    Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
    Type: Application
    Filed: January 29, 2014
    Publication date: May 29, 2014
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anirudha V. SUMANT, Alexander BALANDIN
  • Patent number: 8673164
    Abstract: A method to fabricate nanoporous diamond membranes and a nanoporous diamond membrane are provided. A silicon substrate is provided and an optical lithography is used to produce metal dots on the silicon substrate with a predefined spacing between the dots. Selective seeding of the silicon wafer with nanodiamond solution in water is performed followed by controlled lateral diamond film growth producing the nanoporous diamond membrane. Back etching of the under laying silicon is performed to open nanopores in the produced nanoporous diamond membrane.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: March 18, 2014
    Assignee: UChicago Argonne, LLC
    Inventor: Anirudha V. Sumant
  • Patent number: 8652946
    Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
    Type: Grant
    Filed: April 16, 2012
    Date of Patent: February 18, 2014
    Assignee: Uchicago Argonne, LLC.
    Inventors: Anirudha V. Sumant, Alexander Balandin
  • Publication number: 20140027294
    Abstract: A continuous or semi-continuous process for fabricating nanowires or microwires makes use of the substantially planar template that may be moved through electrochemical solution to grow nanowires or microwires on exposed conductive edges on the surface of that template. The planar template allows fabrication of the template using standard equipment and techniques. Adhesive transfer may be used to remove the wires from the template and in one embodiment to draw a continuous wire from the template to be wound around the drum.
    Type: Application
    Filed: July 23, 2013
    Publication date: January 30, 2014
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anirudha V. SUMANT, Michael Zach, Alan David Marten