Patents by Inventor Anirudha V. Sumant

Anirudha V. Sumant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140023864
    Abstract: A system and method for forming graphene on a substrate and an opposed wear member having a DLC coating. The system includes graphene formed by an exfoliation process to dispose solution processed graphene onto a substrate. The system further includes an opposing wear member of DLC disposed on another substrate and a gas atmosphere of an inert gas like N2.
    Type: Application
    Filed: July 19, 2012
    Publication date: January 23, 2014
    Inventors: Anirudha V. Sumant, Ali Erdemir, Junho Choi, Diana Berman
  • Publication number: 20130273720
    Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
    Type: Application
    Filed: April 16, 2012
    Publication date: October 17, 2013
    Inventors: Anirudha V. SUMANT, Alexander A. Balandin
  • Publication number: 20130273723
    Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
    Type: Application
    Filed: May 25, 2012
    Publication date: October 17, 2013
    Inventor: Anirudha V. SUMANT
  • Patent number: 8525185
    Abstract: A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: September 3, 2013
    Assignee: UChicago Argonne, LLC
    Inventors: Charles L. Goldsmith, Orlando H. Auciello, John A. Carlisle, Suresh Sampath, Anirudha V. Sumant, Robert W. Carpick, James Hwang, Derrick C. Mancini, Chris Gudeman
  • Publication number: 20130084436
    Abstract: A method to fabricate nanoporous diamond membranes and a nanoporous diamond membrane are provided. A silicon substrate is provided and an optical lithography is used to produce metal dots on the silicon substrate with a predefined spacing between the dots. Selective seeding of the silicon wafer with nanodiamond solution in water is performed followed by controlled lateral diamond film growth producing the nanoporous diamond membrane. Back etching of the under laying silicon is performed to open nanopores in the produced nanoporous diamond membrane.
    Type: Application
    Filed: September 29, 2011
    Publication date: April 4, 2013
    Applicant: UCHICAGO ARGONNE, LLC
    Inventor: Anirudha V. Sumant
  • Patent number: 8354290
    Abstract: An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
    Type: Grant
    Filed: April 5, 2011
    Date of Patent: January 15, 2013
    Assignee: UChicago Argonne, LLC
    Inventors: Anirudha V. Sumant, Orlando H. Auciello, Derrick C. Mancini
  • Publication number: 20120193685
    Abstract: A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.
    Type: Application
    Filed: April 7, 2011
    Publication date: August 2, 2012
    Applicant: UChicago Argonne, LLC
    Inventors: Charles L. Goldsmith, Orlando H. Auciello, John A. Carlisle, Suresh Sampath, Anirudha V. Sumant, Robert W. Carpick, James Hwang, Derrick C. Mancini, Chris Gudeman
  • Publication number: 20120193684
    Abstract: An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
    Type: Application
    Filed: April 5, 2011
    Publication date: August 2, 2012
    Applicant: UChicago Argonne, LLC
    Inventors: Anirudha V. Sumant, Orlando H. Auciello, Derrick C. Mancini
  • Publication number: 20110107473
    Abstract: Diamond-like carbon (DLC) coated nanoprobes and methods for fabricating such nanoprobes are provided. The nanoprobes provide hard, wear-resistant, low friction probes for use in such applications as atomic force microscopy, nanomachining, nanotribology, metrology and nanolithography. The diamond-like carbon coatings include a carbon implantation layer which increases adhesion of a deposited DLC layer to an underlying nanoprobe tip.
    Type: Application
    Filed: March 14, 2007
    Publication date: May 5, 2011
    Inventors: Robert W. Carpick, Kumar Sridharan, Anirudha V. Sumant
  • Publication number: 20070220959
    Abstract: A monolithically integrated 3-D membrane or diaphragm/tip (called 3-D tip) of substantially all UNCD having a tip with a radius of about less than 50 nm capable of measuring forces in all three dimensions or being used as single tips or in large arrays for imprint of data on memory media, fabrication of nanodots of different materials on different substrates and many other uses such as nanolithography production of nanodots of biomaterials on substrates, etc. A method of molding UNCD is disclosed including providing a substrate with a predetermined pattern and depositing an oxide layer prior to depositing a carbide-forming metallic seed layer, followed by seeding with diamond nano or micropowder in solvent suspension, or mechanically polishing with diamond powder, or any other seeding method, followed by UNCD film growth conforming to the predetermined pattern.
    Type: Application
    Filed: October 4, 2006
    Publication date: September 27, 2007
    Applicant: UChicago Argonne LLC
    Inventors: Anirudha V. Sumant, Robert W. Carpick, Orlando H. Auciello, John A. Carlisle