Patents by Inventor Anthony Yen

Anthony Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD PROVIDING FOR ASYMMETRIC PUPIL CONFIGURATION FOR AN EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS
    Publication number: 20170228490
    Abstract: A pattern of features of an integrated circuit is provided. A configuration of a pupil of an extreme ultraviolet wavelength radiation beam (also referred to as an illumination mode), is selected. The selected configuration is an asymmetric, single pole configuration. At least one disparity is determined between a simulated imaging using the selected configuration and a designed imaging for the pattern of features. A parameter (also referred to as a compensation parameter) is then modified to address the at least one disparity, wherein the parameter at least one a design feature, a mask feature, and a lithography process parameter. A substrate is then exposed to the pattern of features using the selected configuration and the modified parameter.
    Type: Application
    Filed: February 10, 2016
    Publication date: August 10, 2017
    Inventors: Chia-Chun Chung, Norman Chen, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Method of semiconductor integrated circuit fabrication
    Patent number: 9728408
    Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A dielectric layer is formed over a substrate. An interlayer is formed over the dielectric layer. A first photoresist layer with a first opening is formed over the interlayer and a second photoresist layer having a second opening is formed over the first photoresist layer. Spacers are formed along sidewalls of the first opening and the second opening. A first trench is formed in the interlayer by using the spacer along the first opening as an etch mask. A second trench is formed in the interlayer by using the spacer along the second opening as an etch mask. The first trench and the second trench are extended down into the dielectric layer as a lower portion and an upper portion, respectively, of a dielectric trench.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: August 8, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Ju Lee, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Tsung-Min Huang, Anthony Yen
  • Method to define multiple layer patterns with a single exposure by charged particle beam lithography
    Patent number: 9726983
    Abstract: The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: August 8, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • EUV mask and manufacturing method by using the same
    Patent number: 9709884
    Abstract: The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over the substrate. A capping layer is disposed over the reflective structure. An absorber layer is disposed over the capping layer. The absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: July 18, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Extreme ultraviolet lithography process and mask
    Patent number: 9690186
    Abstract: An extreme ultraviolet lithography (EUVL) process is disclosed. The process comprises receiving a mask. The mask includes a low thermal expansion material (LTEM) substrate, a reflective multilayer (ML) over one surface of the LTEM substrate, a first region having a phase-shifting layer over the reflective ML, and a second region having no phase-shifting layer over the reflective ML. The EUVL process also comprises exposing the mask by a nearly on-axis illumination with partial coherence less than 0.3 to produce diffracted light and non-diffracted light, removing at least a portion of the non-diffracted light, and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: June 27, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Cheng Lu, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Photomask for forming multiple layer patterns with a single exposure
    Patent number: 9685367
    Abstract: The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: June 20, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • EUV lithography system and method with optimized throughput and stability
    Patent number: 9678431
    Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography process. The process includes loading a wafer to an EUV lithography system having an EUV source; determining a dose margin according to an exposure dosage and a plasma condition of the EUV source; and performing a lithography exposing process to the wafer by EUV light from the EUV source, using the exposure dosage and the dose margin.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: June 13, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Cheng Lu, Jeng-Horng Chen, Shun-Der Wu, Anthony Yen
  • Method of making an extreme ultraviolet pellicle
    Patent number: 9664999
    Abstract: The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.
    Type: Grant
    Filed: August 24, 2016
    Date of Patent: May 30, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Tsung Shih, Tien-Hsi Lee, Chia-Jen Chen, Shang-Chieh Chien, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Mask and method for forming the same
    Patent number: 9651857
    Abstract: A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: May 16, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. LTD.
    Inventors: Yun-Yue Lin, Chia-Jen Chen, Hsin-Chang Lee, Ta-Cheng Lien, Anthony Yen
  • Treating A Capping Layer of a Mask
    Publication number: 20170108768
    Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.
    Type: Application
    Filed: December 30, 2016
    Publication date: April 20, 2017
    Inventors: PEI-CHENG HSU, CHIH-CHENG LIN, TA-CHENG LIEN, WEI-SHIUAN CHEN, HSIN-CHANG LEE, ANTHONY YEN
  • PHOTOMASK FOR FORMING MULTIPLE LAYER PATTERNS WITH A SINGLE EXPOSURE
    Publication number: 20170110366
    Abstract: The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern.
    Type: Application
    Filed: December 29, 2016
    Publication date: April 20, 2017
    Inventors: Yen-Cheng LU, Chih-Tsung SHIH, Shinn-Sheng YU, Jeng-Horng CHEN, Anthony YEN
  • Extreme ultraviolet lithography process and mask with reduced shadow effect and enhanced intensity
    Patent number: 9618837
    Abstract: An extreme ultraviolet (EUV) mask comprises a substrate, a first reflective layer above a surface of the substrate, and a second reflective layer over the first reflective layer. The second reflective layer has various openings that define a first state and a second state. The first state includes the first reflective layer and is free of the second reflective layer. The second state includes both the first and second reflective layers. The first state has a first reflection coefficient and a first reflectivity. The second state has a second reflection coefficient and a second reflectivity. A phase difference between the first and second reflection coefficients is about 180 degrees.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: April 11, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Structure and method for reflective-type mask
    Patent number: 9612523
    Abstract: A reflective mask includes a substrate; a reflective multilayer formed on the substrate; an absorber layer formed on the reflective multilayer, wherein the absorber layer is patterned to have openings according to an integrated circuit layout; and a protection layer formed over the reflective multilayer within the openings.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: April 4, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Tsung Shih, Chi-Lun Lu, Jeng-Horng Chen, Chia-Chen Chen, Shinn-Sheng Yu, Anthony Yen, Wei-Hung Liu
  • Method of fabricating an integrated circuit with enhanced defect repairability
    Patent number: 9612531
    Abstract: The present disclosure provides one embodiment of a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a mask to a lithography system. The mask includes defect-repaired regions and defines an integrated circuit (IC) pattern thereon. The method also includes setting an illuminator of the lithography system in an illumination mode according to the IC pattern, configuring a pupil filter in the lithography system according to the illumination mode and performing a lithography exposure process to a target with the mask and the pupil filter by the lithography system in the illumination mode.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: April 4, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof
    Patent number: 9588419
    Abstract: Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A removing process is provided to form an absorber with a top surface lower than a top surface of the capping layer.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: March 7, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • MASK CLEANING
    Publication number: 20170060005
    Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.
    Type: Application
    Filed: August 31, 2015
    Publication date: March 2, 2017
    Inventors: Shu-Hao Chang, Norman Chen, Jeng-Horng Chen, Kuo-Chang Kau, Ming-Chin Chien, Shang-Chieh Chien, Anthony Yen, Kevin Huang
  • EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK WITH REDUCED SHADOW EFFECT AND ENHANCED INTENSITY
    Publication number: 20170052441
    Abstract: An extreme ultraviolet (EUV) mask comprises a substrate, a first reflective layer above a surface of the substrate, and a second reflective layer over the first reflective layer. The second reflective layer has various openings that define a first state and a second state. The first state includes the first reflective layer and is free of the second reflective layer. The second state includes both the first and second reflective layers. The first state has a first reflection coefficient and a first reflectivity. The second state has a second reflection coefficient and a second reflectivity. A phase difference between the first and second reflection coefficients is about 180 degrees.
    Type: Application
    Filed: November 7, 2016
    Publication date: February 23, 2017
    Inventors: YEN-CHENG LU, SHINN-SHENG YU, JENG-HORNG CHEN, ANTHONY YEN
  • Method and system for reducing pole imbalance by adjusting exposure intensity
    Patent number: 9575412
    Abstract: A method and system for adjusting exposure intensity to reduce unwanted lithographic effects is disclosed. In some exemplary embodiments, the method of photolithography includes receiving a mask and a workpiece. An orientation of an illumination pattern relative to the mask is determined, and an intensity profile of the illumination pattern is adjusted according to the orientation. The mask is exposed to radiation according to the illumination pattern and the intensity profile. Radiation resulting from the exposing of the mask is utilized to expose the workpiece. In some such embodiments, the intensity profile includes an intensity that varies across an illuminated region of the illumination pattern.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: February 21, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Method To Define Multiple Layer Patterns With A Single Exposure By Charged Particle Beam Lithography
    Publication number: 20170045827
    Abstract: The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.
    Type: Application
    Filed: July 25, 2016
    Publication date: February 16, 2017
    Inventors: Yen-Cheng Lu, Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Extreme ultraviolet lithography mask and multilayer deposition method for fabricating same
    Patent number: 9557636
    Abstract: A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle ? is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: January 31, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Cheng Lu, Shinn-Sheng Yu, Anthony Yen