Abstract: A surgical working instrument (3) is disclosed that is inserted in a working channel (7) of an endoscope (2) and is slidably located therein. A device (27) for determination of the relative position of the working instrument (3) to the endoscope (2) is configured to determine in an optical manner that the distal end (8) of the working instrument (3) has reached a distal end (8) of the working channel (7). The position determination device (27) comprises a light conductor (28) that is attached to the working instrument (3) and configured to receive light surrounding the working instrument (3) in the vicinity of its distal end (14), wherein based on the light received by the light conductor (28) the relative position of the light conductor (28) and thus the working instrument (3) in relation to the endoscope (2) can be determined.

Abstract: A vertical junction field effect transistor includes mesa regions and trench structures extending along a first lateral direction in a semiconductor body and arranged alternately along a second lateral direction. The trench structures include a gate contact material electrically connected to a gate region of a first conductivity type in the semiconductor body. A width of the trench structures satisfies one or more of the following conditions: i) the width of at least one trench structure arranged outermost along the second lateral direction is smaller than in a more central part of the trench structures; or ii) the width of at least some trench structures is smaller along an end part in the first lateral direction than in the more central part, an extent of the end part along the first lateral direction being larger than a pitch between neighboring trench structures along the second lateral direction.

Abstract: A transistor device is disclosed.

Abstract: A method and a device for treating poultry eggs with an electron beam bundle to sterilize the calcareous shell are disclosed. The method includes moving at least one egg through the beam path of an electron beam source; irradiating the eggs, whereby the calcareous shell is irradiated with a varying dose; and either carrying out an irradiation encompassing all regions of the calcareous shell of the egg by employing the electron beam bundle, whereby an element is inserted into the path of the electron beam bundle; carrying out an irradiation of a rolling/rolled egg by employing the electron beam source in the path of the electron beam bundle; or carrying out an irradiation of the held eggs by employing the electron beam source in the electron beam bundle path at a zero degree position of one side in a device arranged upstream of a turning device.

Abstract: A transistor device is enclosed. The transistor device includes: a semiconductor body; a plurality of drift regions of a first doping type; a plurality of compensation regions of a second doping type adjoining the drift regions; and a plurality of transistor cells each including a body region adjoining a respective one of the plurality of drift regions, a source region adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. The source regions of the plurality of transistor cells are connected to a source node, the body regions of the plurality of transistor cells are separated from the plurality of compensation regions in the semiconductor body, and the plurality of compensation regions are ohmically connected to the source node.

Abstract: A semiconductor device includes a semiconductor body having opposing first and second surfaces in a vertical direction, a first semiconductor region of a first doping type electrically coupled to a first terminal, a second semiconductor region of a second doping type electrically coupled to a second terminal, and a third semiconductor region of the second doping type, but less highly doped than the second semiconductor region, extending in an active region of the semiconductor device from the first to the second semiconductor region in the vertical direction. A horizontal field-stop-region of the first doping type extends in an edge region of the device from the first semiconductor region into the semiconductor body in the vertical direction, such that it directly adjoins the first and second semiconductor regions. A horizontal compensation region of the first doping type extends from the horizontal field-stop-region into the second semiconductor region in a horizontal direction.

Abstract: Methods and devices for determining the cooked state of eggs. These are characterised in particular in that the cooked state of the egg can be monitored and/or the cooking process can be ended when a desired cooked state has been reached. To this end, an egg is positioned in a vessel, the temperature is increased, and at least one light source is positioned on or in the direct vicinity of the egg. The transmission of light through the egg is determined and a transmission of at least 96% of the maximum transmission degree of a raw egg is achieved for a runny yolk, of at least 94% is achieved for a soft yolk, of at least 90% is achieved for a medium soft yolk, and at least 85% is achieved for a hard yolk.

Abstract: A power converter circuit includes an inductor and rectifier circuit having an inductor connected in series with an electronic switch, and a rectifier circuit, and a controller for generating a drive signal for driving the electronic switch. The electronic switch has drain, source and gate nodes, drift and compensation cells each including a drift region of a first doping type and a compensation region of a second doping type, and a control structure connected between the drift region of each of the drift and compensation cells and the source node. Each drift region is coupled to the drain node and each compensation region cells is coupled to the source node. A first type doping concentration N1 of the drift region is higher than a first doping level L1, and a second type doping concentration N2 of the compensation region is higher than a second doping level L2.

Abstract: A transistor device includes at least one transistor cell, having, in a semiconductor body, a source region of a first doping type in a body region of a second doping type, a drain region, and a drift region of the first doping type adjoining the body region and arranged between the body region and the drain region. A low-resistance region of the second doping type in the body region adjoins the source region. A gate electrode dielectrically insulated from the source and body regions by a gate dielectric is arranged above a first surface of the semiconductor body. A length of an overlap between the source region and the gate electrode is larger than 70 nanometers. A doping profile of the low-resistance region along a line that is vertical to the first surface and goes through an edge of the gate electrode has a maximum of higher than 1E19 cm?3.

Abstract: A transistor device is enclosed. The transistor device includes: a semiconductor body; a plurality of drift regions of a first doping type; a plurality of compensation regions of a second doping type adjoining the drift regions; and a plurality of transistor cells each including a body region adjoining a respective one of the plurality of drift regions, a source region adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. The source regions of the plurality of transistor cells are connected to a source node, the body regions of the plurality of transistor cells are separated from the plurality of compensation regions in the semiconductor body, and the plurality of compensation regions are ohmically connected to the source node.

Abstract: A transistor device comprises at least one gate electrode, a gate runner connected to the at least one gate electrode and arranged on top of a semiconductor body, a plurality of gate pads arranged on top of the semiconductor body, and a plurality of resistor arrangements. Each gate pad is electrically connected to the gate runner via a respective one of the plurality of resistor arrangements, and each of the resistor arrangements has an electrical resistance, wherein the resistances of the plurality of resistor arrangements are different.

Abstract: A semiconductor device includes a semiconductor body having opposing first and second surfaces in a vertical direction, a first semiconductor region of a first doping type electrically coupled to a first terminal, a second semiconductor region of a second doping type electrically coupled to a second terminal, and a third semiconductor region of the second doping type, but less highly doped than the second semiconductor region, extending in an active region of the semiconductor device from the first to the second semiconductor region in the vertical direction. A horizontal field-stop-region of the first doping type extends in an edge region of the device from the first semiconductor region into the semiconductor body in the vertical direction, such that it directly adjoins the first and second semiconductor regions. A horizontal compensation region of the first doping type extends from the horizontal field-stop-region into the second semiconductor region in a horizontal direction.

Abstract: Methods and devices for determining the cooked state of eggs. These are characterised in particular in that the cooked state of the egg can be monitored and/or the cooking process can be ended when a desired cooked state has been reached. To this end, an egg is positioned in a vessel, the temperature is increased, and at least one light source is positioned on or in the direct vicinity of the egg. The transmission of light through the egg is determined and a transmission of at least 96% of the maximum transmission degree of a raw egg is achieved for a runny yolk, of at least 94% is achieved for a soft yolk, of at least 90% is achieved for a medium soft yolk, and at least 85% is achieved for a hard yolk.

Abstract: A power converter circuit includes an inductor and rectifier circuit having an inductor connected in series with an electronic switch, and a rectifier circuit, and a controller for generating a drive signal for driving the electronic switch. The electronic switch has drain, source and gate nodes, drift and compensation cells each including a drift region of a first doping type and a compensation region of a second doping type, and a control structure connected between the drift region of each of the drift and compensation cells and the source node. Each drift region is coupled to the drain node and each compensation region cells is coupled to the source node. A first type doping concentration N1 of the drift region is higher than a first doping level L1, and a second type doping concentration N2 of the compensation region is higher than a second doping level L2.

Abstract: A switched-mode power supply includes a power semiconductor device that includes a semiconductor body comprising transistor cells and a drift zone between a drain layer and the transistor cells, the transistor cells comprising source zones, wherein the device exhibits a first output charge gradient when a voltage between the drain layer and the source zones of the transistor cells increases from a depletion voltage of the semiconductor device to a maximum drain/source voltage of the semiconductor device, wherein the device exhibits a second output charge gradient when a voltage between the drain layer and the source zones of the semiconductor device decreases from the maximum drain/source voltage to the depletion voltage of the semiconductor device, and wherein the semiconductor device is configured such that the first output charge gradient deviates by less than 5% from the second output charge gradient.

Abstract: A transistor device includes drain, source and gate nodes, a plurality of drift and compensation cells each including a drift region of a first doping type and a compensation region of a second doping type complementary to the first doping type, and a control structure connected between the drift region of each of the drift and compensation cells and the source node. Each drift region is coupled to the drain node and each compensation region cells is coupled to the source node. A first type doping concentration N1 of the drift region is higher than a first doping level L1, and a second type doping concentration N2 of the compensation region is higher than a second doping level L2.

Abstract: A semiconductor device includes a semiconductor body, which includes transistor cells and a drift zone between a drain layer and the transistor cells. The drift zone includes a compensation structure. Above a depletion voltage a first output charge gradient obtained by increasing a drain-to-source voltage from the depletion voltage to a maximum drain-to-source voltage deviates by less than 5% from a second output charge gradient obtained by decreasing the drain-to-source voltage from the maximum drain-to-source voltage to the depletion voltage. At the depletion voltage the first output charge gradient exhibits a maximum curvature.

Abstract: According to the present invention, a method and an apparatus are provided for creating an opening in the calcified shell of an incubated bird egg containing an embryo, in the region of the blunt end of the incubated bird egg. Within the region of the blunt end there is an outer membrane and an inner membrane with an air cell located therebetween. The apparatus comprises a holder on which the incubated bird eggs are stored with their pointed ends facing downwards, wherein the embryo adjoins the inner membrane, a first detection device configured to detect the position and geometry of the air cell, and an opening device configured to create an opening in the calcified shell at the blunt end of the incubated bird egg above the taut inner membrane. Due to the open calcified shell, the sex of the embryo may be determined in a reliable way.

Abstract: A transistor device comprises at least one gate electrode, a gate runner connected to the at least one gate electrode and arranged on top of a semiconductor body, a plurality of gate pads arranged on top of the semiconductor body, and a plurality of resistor arrangements. Each gate pad is electrically connected to the gate runner via a respective one of the plurality of resistor arrangements, and each of the resistor arrangements has an electrical resistance, wherein the resistances of the plurality of resistor arrangements are different.

Abstract: A transistor device includes at least one transistor cell, having, in a semiconductor body, a source region of a first doping type in a body region of a second doping type, a drain region, and a drift region of the first doping type adjoining the body region and arranged between the body region and the drain region. A low-resistance region of the second doping type in the body region adjoins the source region. A gate electrode dielectrically insulated from the source and body regions by a gate dielectric is arranged above a first surface of the semiconductor body. A length of an overlap between the source region and the gate electrode is larger than 70 nanometers. A doping profile of the low-resistance region along a line that is vertical to the first surface and goes through an edge of the gate electrode has a maximum of higher than 1E19 cm?3.