Abstract: The invention is directed to an antimicrobial polymer that can preferably be processed thermoplastically, a method for the preparation of said antimicrobial polymer and its use in antimicrobial treatment. The invention is further directed to polymer blends containing antimicrobial polymers and the use of special monomers in the preparation of antimicrobial polymers that can be processed thermoplastically.

Abstract: The present invention relates to a radically curable chemical composition in the form of a resin for the production of materials with an intrinsically antimicrobial effect, as well as a process for the production of such resins and materials, as well as the use of an amino-functionalized styrene derivative as reactive diluents. The cross-linked plastic formed upon curing has an intrinsically antimicrobial effect without the use of additional biocides.

Abstract: The present invention is directed to a radically curable chemical composition in form of a resin for the production of materials having an intrinsic antimicrobial effect, to the applications of these materials, to a method for the preparation of these resins and materials, and to the use of an amino-functionalized styrene derivative as a reactive diluent. The cross-linked plastic materials formed after curing have an intrinsic antimicrobial effect without the use of additional biocides.

Abstract: A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active area and the edge, a source metallization on the first surface and a drain metallization. In the active area, first conductivity type drift portions alternate with second conductivity type compensation regions. The drift portions contact the drain metallization and have a first maximum doping concentration. The compensation regions are in Ohmic contact with the source metallization. The peripheral area includes a first edge termination region and a second semiconductor region in Ohmic contact with the drift portions having a second maximum doping of the first conductivity type which lower than the first maximum doping concentration by a factor of ten. The first edge termination region of the second conductivity type adjoins the second semiconductor region and is in Ohmic contact with the source metallization.

Abstract: A semiconductor device includes a semiconductor body, which includes transistor cells and a drift zone between a drain layer and the transistor cells. The drift zone includes a compensation structure. Above a depletion voltage a first output charge gradient obtained by increasing a drain-to-source voltage from the depletion voltage to a maximum drain-to-source voltage deviates by less than 5% from a second output charge gradient obtained by decreasing the drain-to-source voltage from the maximum drain-to-source voltage to the depletion voltage. At the depletion voltage the first output charge gradient exhibits a maximum curvature.

Abstract: A scrubbing solution is provided having an absorbent for carbon dioxide based on amines, or ethanolamines, or amino acid salts, or potash, or a combination thereof, and an additive activating the absorption rate, wherein the activating additive is a germanium dioxide. A corresponding method for accelerating the absorption of carbon dioxide is also provided, wherein a carbon dioxide-containing gas is contacted with such a scrubbing solution, wherein the carbon dioxide is physically dissolved in the scrubbing solution and is chemically absorbed with the participation of the absorbent, and wherein the germanium dioxide acts catalytically for at least one reaction step of the chemical absorption of the carbon dioxide.

Abstract: A washing solution for the absorption of carbon dioxide is provided. A method for separating carbon dioxide out of a flue gas of an incineration plant is also provided, wherein at least one alkali metal oxide is added as an oxidation agent for nitrites to a washing solution having an amine-containing absorption agent, the flue gas is brought into contact with the washing solution prepared in this manner and the contained carbon dioxide is absorbed, and wherein the washing solution is then heat-treated and the carbon dioxide is desorbed. A corresponding washing solution having an amine-containing absorption agent and having at least one alkali metal oxide as an oxidation agent for nitrites is also provided.

Abstract: A method for depositing carbon dioxide from a flue gas (RG) of a combustion system is provided. A scrubbing solution (A) with an amine-containing absorption agent is mixed together with ozone and/or hydrogen peroxide as an oxidizing agent for nitrite. The flue gas (RG) is brought into contact with the scrubbing solution (A) prepared in this manner, whereby carbon dioxide contained in the flue gas is absorbed, and the scrubbing solution (A) is then thermally treated, whereby the carbon dioxide is desorbed. A corresponding scrubbing solution (A) with an amine-containing absorption agent and with ozone and/or hydrogen peroxide as an oxidizing agent for nitrite is also provided.

Abstract: The present disclosure relates to a device for delivering substances to specific embryonic structures, including heart and blood vessels, within a developing avian egg. The disclosure also relates to methods of using the device to produce enhanced avian embryos. Methods include administering to chicken embryos various substances, including vaccines, nutrients, and stem cells. Chickens resulting from enhanced avian embryos have advantages, including greater growth potential and resistance to pathogen infection/infestation.

Abstract: Apparatus and process for removal of volatile degradation products from the absorbent circuit of a CO2 separation process are provided. The CO2 separation process may use the absorbent circuit in an absorption process and a desorption process. Condensate is withdrawn from a condensation process connected downstream of the desorption process, and purified to substantially free such condensate of degradation products. The purified condensate is recycled back to the absorbent circuit.

Abstract: A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active area and the edge, a source metallization on the first surface and a drain metallization. In the active area, first conductivity type drift portions alternate with second conductivity type compensation regions. The drift portions contact the drain metallization and have a first maximum doping concentration. The compensation regions are in Ohmic contact with the source metallization. The peripheral area includes a first edge termination region and a second semiconductor region in Ohmic contact with the drift portions having a second maximum doping of the first conductivity type which lower than the first maximum doping concentration by a factor of ten. The first edge termination region of the second conductivity type adjoins the second semiconductor region and is in Ohmic contact with the source metallization.

Abstract: A super junction semiconductor device includes a layered compensation structure with an n-type compensation layer and a p-type compensation layer, a dielectric layer facing the p-type layer, and an intermediate layer interposed between the dielectric layer and the p-type compensation layer. The layered compensation structure and the intermediate layer are provided such that when a reverse blocking voltage is applied between the n-type and p-type compensation layers, holes accelerated in the direction of the dielectric layer have insufficient energy to be absorbed and incorporated into the dielectric material. Since the dielectric layer absorbs and incorporates significantly less holes than without the intermediate layer, the breakdown voltage remains stable over a long operation time.

Abstract: A solvent for selective absorption of CO2 from the flue gas from a combustion plant is provided. The solvent includes an aqueous solution of a secondary amine as an active scrubbing substance and an additive which inhibits the formation of nitrosamine, the additive including a primary amine. A process for providing an absorption liquid is also provided.

Abstract: A solvent for selective absorption of CO2 from the flue gas from a combustion plant is provided. The solvent includes an aqueous solution of a secondary amine an active scrubbing substance and an additive, the additive including a salt of vitamin C or E. A process for providing an absorption liquid, and to the use of the solvent for selective absorption of CO2 from the flue gas from a combustion plant is also provided.

Abstract: A process for purifying a product contaminated with nitrosamines from an operating plant is proposed. The contaminated product is heated to a temperature T at which the nitrosamines are thermally destroyed. The temperature T is set at a higher level than the maximum temperature in the operating plant, and maintained for a residence time t. An apparatus for regeneration of a nitrosamine-contaminated product from a CO2 capture plant is also proposed.

Abstract: A solvent for selective absorption of CO2 from the flue gas from a combustion plant is provided. The solvent includes an aqueous solution of a secondary amino acid salt as an active scrubbing substance and an additive, the additive including a primary amino acid salt. A process for providing an absorption liquid is also provided as well as a process for activating a solvent.

Abstract: The invention relates to methods for determining the sex of birds' eggs. It can be used for an early determination of the sex, in particular in poultry farming, and in this respect also with non-incubated eggs. In the method in accordance with the invention, electromagnetic radiation is emitted onto the blastodisk of an egg by a radiation source and, after a switching off of the radiation source, the decay behavior of the autofluorescence intensity excited by the electromagnetic radiation is detected by a detector at the irradiated region of the blastodisk with time resolution and spectral resolution for at least one wavelength of the autofluorescence. The fractal dimension DF is calculated using the determined measured intensity values and the value of the fractal dimension DF is compared with a species-specific and sex-specific limit value, wherein, when the limit value is exceeded, the respective egg is classified as female and, when it is not reached, the egg is classified as male.

Abstract: The invention relates to an anti-slip insert mat having a carrier layer and a textile catching layer formed of filaments/fibers, wherein the catching layer has raised regions and compressed regions of lower height, wherein the raised regions are formed by free ends of the fibers and the compressed regions of the catching layer are formed by permanently pressing the free ends of the fibers.

Abstract: The invention relates to methods for determining the sex of birds' eggs. It can be used for an early determination of the sex, in particular in poultry farming, and in this respect also with non-incubated eggs. In the method in accordance with the invention, electromagnetic radiation is emitted onto the blastodisk of an egg by a radiation source and, after a switching off of the radiation source, the decay behavior of the autofluorescence intensity excited by the electromagnetic radiation is detected by a detector at the irradiated region of the blastodisk with time resolution and spectral resolution for at least one wavelength of the autofluorescence. The fractal dimension DF is calculated using the determined measured intensity values and the value of the fractal dimension DF is compared with a species-specific and sex-specific limit value, wherein, when the limit value is exceeded, the respective egg is classified as female and, when it is not reached, the egg is classified as male.

Abstract: Transistor structures, with one source/drain region connected to a charge storage device to be insulated includes an asymmetric gate conductor structure. At a first side wall, which faces the one source/drain region, the asymmetric gate conductor structure has a side wall oxide with a greater thickness and a bird's beak structure with a greater length than at an opposite, second side wall. An effective channel length is increased for the same feature size of the gate conductor structure. Memory cells can be realized in a higher density.