Abstract: A core-shell nanowire with an uneven surface structure can be advantageously used in thermoelectric devices. The core-shell nanowire with the uneven surface structure includes a core region and a shell region, wherein the uneven surface structure is formed in the shell region.

Abstract: Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.

Abstract: A composite structure includes; graphene and at least one substantially one-dimensional nanostructure disposed on the graphene.

Abstract: A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.

Abstract: A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.

Abstract: A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

Abstract: A three-dimensional light emitting device and a method for fabricating the light emitting device are provided. The light emitting device comprises a substrate and a semiconductor nanoparticle layer wherein the substrate is provided with a plurality of three-dimensional recesses and the surface having the recesses is coated with semiconductor nanoparticles. According to the three-dimensional light emitting device, the formation of the semiconductor nanoparticles on the surface of the recessed substrate increases the light emitting area and enhances the luminescence intensity, leading to an increase in the amount of light emitted from the light emitting device per unit area. Therefore, the three-dimensional light emitting device has the advantage of improved luminescence efficiency.

Abstract: An inorganic electroluminescence device including: a substrate; a first electrode formed on the substrate; an inorganic light emitting layer layer formed on the first electrode; a dielectric layer formed on the inorganic light emitting layer; a second electrode formed on the dielectric layer; and a quantun dot layer that is formed between the first electrode and the inorganic light emitting layer and emits light by being excited by visible light emitted from the inorganic light emitting layer.

Abstract: Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.

Abstract: An electroluminescent element and an electronic device including the electroluminescent element include a glass template having a silica layer as a matrix, electrodes and a luminescent material. Since the electroluminescent element according to the present invention includes silica as a matrix, the electroluminescent element has a stabilized structure even though a space between the luminescent layer and the electrode of the glass template is not filled. Further, such an electroluminescent element may be easily prepared, and thus may be effectively applied to various electronic devices, such as display devices, illumination devices and backlight units.

Abstract: A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.

Abstract: A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

Abstract: A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto.

Abstract: Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.

Abstract: Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.

Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

Abstract: A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.

Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

Abstract: Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.