Abstract: A ferroelectric random access memory (FRAM) device includes a memory cell array including a plurality of FRAM cells connected to a first bit line and a reference cell connected to a second bit line. The device also includes a sense amplifier circuit configured to evaluate an amount of charges induced in a FRAM cell at a first mode and sense data stored in the FRAM cell at a second mode, wherein the sense amplifier circuit comprises a reference voltage generator configured to output an externally applied voltage as a reference voltage at the first mode, and output the reference voltage in response to a voltage applied to the second bit line from the reference cell and a voltage charged to an offset node at the second mode, and an amplifier circuit configured to sense and amplify a difference between a voltage applied to the first bit line from a selected FRAM cell and the reference voltage.

Abstract: A flash memory device and a flash memory system are disclosed. The flash memory device includes a first non-volatile memory including a plurality of page data cells, storing page data, and reading and outputting the stored page data when a read command is applied from an external portion; and a second non-volatile memory including a plurality of spare data cells respectively adjacent to the plurality of page data cells, storing spare data, scanning the spare data and temporarily storing corresponding information when a file system is mounted, reading and outputting the stored spare data when the read command is applied.

Abstract: A ferroelectric RAM (Random Access Memory) device includes at least one memory cell constructed of one access transistor operating by a word line enable signal, and one ferroelectric capacitor connected between a bit line and the access transistor. The device has a cell array structure based on a repeated array of the memory cells. The device also includes a word line driver suitable for a high integration and reducing power consumption. The driving method in the ferroelectric RAM device generates a word line enable signal having a level of power source voltage, to read and write data. The method has advantages of being suitable for a high integration, enhancing an operating speed and reducing power consumption and providing stabilized read and write operations.

Abstract: A semiconductor memory device having a word line driver circuit configured in stages. A plurality of sub word line driver circuits are connected, in parallel, to each main word line, and provide a sub word line enable signal to a selected sub word line in response to a main word line enable signal provided through a main word line. A plurality of (local) word line driver circuits are connected in parallel, to each sub word line and provide a local word line enable signal to a selected local word line in response to the (main/sub) word line enable signal so as to operate a plurality of memory cells connected to the selected local word line. The transistor count and layout area of a semiconductor memory device decreases and a reduced chip area can be achieved.

Abstract: A redundancy circuit and repair method for a semiconductor memory device. The redundancy circuit comprises an address buffer for outputting a first internal address and a second internal address (used only during redundancy programming to carry failed memory addresses) based on an external address; and address storage and comparison units, each one of the address storage and comparison units being selected for programming using the second internal address. The address storage and comparison units comprise ferroelectric storage cells that store the address of a defective (failed) main memory cell and outputs a redundancy decoder enable signal in response to a first internal address matching the stored (second internal) address. Accordingly, the redundancy circuit with ferroelectric storage cells and a repair method allows the performance of a second repair when a defective cell is detected after a first repair or after a packaging process.

Abstract: A semiconductor memory having two different memory areas in one chip includes a memory cell array including a first variable memory area controlled to be accessible in at least first and second operation modes, and a second variable memory area controlled to be inaccessible in owe of the first and second operation modes; and a memory control unit for storing area information discriminating between the first memory area and the second memory area and generating memory control signals for controlling access to the first memory area and the second memory area. One memory can be substituted for a memory combination including ROMs and RAMs in one chip.

Abstract: Ferroelectric memory devices include a ferroelectric memory cell. The ferroelectric memory cell has at least one bit line and a plate line. A control circuit drives the at least one bit line with write data substantially concurrently with activation of the plate line during a write operation. The memory devices may also include a sense amplifier coupled to the ferroelectric memory cell and the control circuit may be further configured to deactivate the plate line substantially concurrently with activation of the sense amplifier during a read operation.

Abstract: A drive circuit of a FRAM (Ferroelectric Random Access Memory) includes an address buffer circuit that buffers an applied external address signal and generates an internal address signal, and detects a transition of the internal address signal and generates address transition detection signals for respective internal address signals. The FRAM includes a composite pulse signal generating circuit which limits a subsequent generation of a composite pulse signal for a delay interval provided after a generation of a previous composite pulse signal, in generating the second composite pulse signal obtained by totaling the respective address transition detection signals. The FRAM includes an internal chip enable buffer circuit which generates an internal chip enable signal to generate an internal control signal, in response to the composite pulse signal.

Abstract: A stacked ferroelectric memory device has selection transistors including a first gate structure, a first impurity region, a second impurity region, a first insulating interlayer covering the selection transistors, bit line structures electrically connected to the first impurity regions, a second insulating interlayer covering the bit line structures, doped single crystalline silicon plugs formed through the first and the second insulating interlayers, each of which contacts the second impurity region and has a height greater than that of the bit line structures, active patterns disposed on the plugs and the second insulating interlayer, each of which contacts the plugs, and ferroelectric transistors disposed on the active patterns, each of which has a second gate structure including a ferroelectric layer pattern and a conductive pattern, a third impurity region and a fourth impurity region. The ferroelectric memory device performs a random access operation and has a high degree of integration.

Abstract: A memory device includes one or more layers of parallel strings of ferroelectric gate transistors on a substrate, each layer of parallel strings including a plurality of parallel line-shaped active regions and a plurality of word lines extending in parallel transversely across the active regions and disposed on ferroelectric patterns on the active regions. A string select gate line may extend transversely across the active regions in parallel with the word lines. A ground select gate line may extend transversely across the active regions in parallel with the word lines.

Abstract: A ferroelectric random access memory (FRAM) device includes a memory cell array including a plurality of FRAM cells connected to a first bit line and a reference cell connected to a second bit line. The device also includes a sense amplifier circuit configured to evaluate an amount of charges induced in a FRAM cell at a first mode and sense data stored in the FRAM cell at a second mode, wherein the sense amplifier circuit comprises a reference voltage generator configured to output an externally applied voltage as a reference voltage at the first mode, and output the reference voltage in response to a voltage applied to the second bit line from the reference cell and a voltage charged to an offset node at the second mode, and an amplifier circuit configured to sense and amplify a difference between a voltage applied to the first bit line from a selected FRAM cell and the reference voltage.

Abstract: Disclosed is a word line driver circuit and a driving method thereof. An input to the circuit has a ground voltage level during a non-selected operating mode and, as the output signal of a word line decoding circuit, is applied at a power source voltage level during a selected operating mode. The output of the circuit has a ground voltage level during the non-selected operating mode and applies a higher voltage than the power source voltage to a word line connected to a memory cell during the selected operating mode. Optionally, a capacitor boosts the output voltage during the selected operating mode.

Abstract: A ferroelectric random access memory (FRAM) device and a driving method thereof are provided that reduce data loss in an operation of the FRAM device. A power supply supplies a power source to the memory device. A power detection circuit detects a voltage level of the power supply and generates a detection signal when the power source has an off state. In an internal chip enable (ICE) signal generation circuit, an ICE signal is disabled to stop operation of the memory device when the ICE signal is enabled and the detection signal is applied at a first time point, and an enabled state of the ICE signal is maintained when the detection signal is applied at a second time point, wherein the operation of the FRAM device continues by control signals generated from the ICE signal.

Abstract: A FeRAM device and a writing section control method therefor, in which the device includes a memory cell constructed of one access transistor and one ferroelectric capacitor; and a writing control circuit for controlling a first writing section to write data of a first logic state in the memory cell and a second writing section to write data of a second logic state different from the first logic state, in response to an external clock signal. Thus a stabilized write operation can be performed and a reliability of data stored in the memory cell can be tested.

Abstract: A ferroelectric memory device includes a plurality of memory cells, each memory cell includes a ferroelectric capacitor and a transistor, a plate line drive unit capable of providing a first voltage to the memory cell array in response to a plate line drive signal, and a reference voltage generating device. The reference voltage generating includes a reference cell block having a plurality of reference cells, each reference cell including a ferroelectric capacitor and a transistor, and a reference plate line drive to provide a reference plate line voltage to at least one reference cell in response to a plate line drive signal and a reference voltage generation signal, where each reference cell generates a reference voltage in response to the reference plate line voltage.

Abstract: A reference voltage generating device that provides a constant reference voltage even with temperature change in a ferroelectric random access memory and a method for driving the same are provided. A device for generating a reference voltage in a ferroelectric random access memory including memory cells, each of which has one ferroelectric capacitor and one access transistor, includes a reference cell composed of a ferroelectric capacitor and a transistor; a reference plate line connected to one end of the ferroelectric capacitor constituting the reference cell; and a reference plate line driver circuit for adjusting a voltage level of a reference plate line enable signal depending on temperature change so that a constant reference voltage is generated.

Abstract: Ferroelectric memory devices include a ferroelectric memory cell. The ferroelectric memory cell has at least one bit line and a plate line. A control circuit drives the at least one bit line with write data substantially concurrently with activation of the plate line during a write operation. The memory devices may also include a sense amplifier coupled to the ferroelectric memory cell and the control circuit may be further configured to deactivate the plate line substantially concurrently with activation of the sense amplifier during a read operation.

Abstract: A reference voltage generating apparatus and a driving method therefor are provided. The method of driving the reference voltage generating apparatus for supplying a reference voltage to read data from a ferroelectric memory cell including a ferroelectric capacitor and an access transistor comprises: re-storing, in a reference cell, data equal to data stored in the reference cell, in response to a first control signal, and generating a reference voltage, in the re-stored reference cell, in response to a second control signal, to compare the reference voltage with a voltage corresponding to data stored in the ferroelectric memory cell and to read the data stored in the ferroelectric memory cell. The reference cell includes a ferroelectric capacitor and an access transistor.

Abstract: Ferroelectric memory devices include a ferroelectric memory cell. The ferroelectric memory cell has at least one bit line and a plate line. A control circuit drives the at least one bit line with write data substantially concurrently with activation of the plate line during a write operation. The memory devices may also include a sense amplifier coupled to the ferroelectric memory cell and the control circuit may be further configured to deactivate the plate line substantially concurrently with activation of the sense amplifier during a read operation.

Abstract: A nonvolatile semiconductor memory device is provided, comprising a nonvolatile memory cell array which has a one-time programming region accessed in response to a first decoding signal and a normal region accessed in response to a second decoding signal. The device performs a read operation and a write operation. The device further comprises (a) a data write circuit writing data in the nonvolatile memory cell array in response to a write enable signal during the write operation; (b) a data read circuit reading data output from the nonvolatile memory cell array in response to a sense amplifier enable signal during the read operation; and (c) a control means activating the sense amplifier enable signal when the first decoding signal is generated and comparing data output from the data read circuit to generate the write enable signal during the write operation.