Abstract: A system and method of characterizing a work piece, comprising: scanning an ion beam across an exposed surface of a work piece, the ion beam causing the emission of secondary electrons at multiple imaging points of the scan, the number of secondary electrons emitted varying at different ones of the multiple imaging points; detecting the emitted secondary electrons at each of the multiple imaging point to form an image, the brightness of each point in the image being determined by the number of secondary electrons detected at a corresponding imaging point on the work piece; determining grain boundaries in the work piece using the differences in brightness at different points in the image, the grain boundaries defining multiple grains; directing a charged particle beam toward one or more analysis points within one or more of the grains, the number of the one or more analysis points within each grain being less than the number of imaging points within the same grain; and detecting emissions from the work piec

Abstract: Sample pillars for x-ray tomography or other tomography scanning are created using an innovative milling strategy on a Plasma-FIB. The strategies are provided in methods, systems, and program products executable to perform the strategies herein. The milling strategy creates an asymmetrical crater around a sample pillar, and provides a single cut cut-free process. Various embodiments may include tuning the ion dose as a function of pixel coordinates along with optimization of the beam scan and crater geometries, drastically reducing the preparation time and significantly improving the overall workflow efficiency. A novel cut-free milling pattern is provided with a crescent shape and optimized dwell-time values.

Abstract: A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and arranged according to the material properties of the sample.

Abstract: A system and method of characterizing a work piece, comprising: scanning an ion beam across an exposed surface of a work piece, the ion beam causing the emission of secondary electrons at multiple imaging points of the scan, the number of secondary electrons emitted varying at different ones of the multiple imaging points; detecting the emitted secondary electrons at each of the multiple imaging point to form an image, the brightness of each point in the image being determined by the number of secondary electrons detected at a corresponding imaging point on the work piece; determining grain boundaries in the work piece using the differences in brightness at different points in the image, the grain boundaries defining multiple grains; directing a charged particle beam toward one or more analysis points within one or more of the grains, the number of the one or more analysis points within each grain being less than the number of imaging points within the same grain; and detecting emissions from the work piec

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and arranged according to the material properties of the sample.

Abstract: An improved process control for a charged beam system is provided that allows the capability of accurately producing complex two and three dimensional structures from a computer generated model in a material deposition process. The process control actively monitors the material deposition process and makes corrective adjustments as necessary to produce a pattern or structure that is within an acceptable tolerance range with little or no user intervention. The process control includes a data base containing information directed to properties of a specific pattern or structure and uses an algorithm to instruct the beam system during the material deposition process. Feedback through various means such as image recognition, chamber pressure readings, and EDS signal can be used to instruct the system to make automatic system modifications, such as, beam and gas parameters, or other modifications to the pattern during a material deposition run.

Abstract: A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O2, greatly increases the etch rate. In one example, polyimide material etched using a Xe+ plasma FIB with a beam energy from 8 keV to 14 keV and O2 as an etch-assisting gas, the increase in etch rate can approach 30× as compared to the default mill rate.

Abstract: Implanting a material in a pattern hardens the material in the pattern for subsequent etching. When the region is etched, by ion beam sputtering, chemically enhanced charged particle beam etching, or chemical etching, a thicker structure remains because of the reduced etch rate of the hardened pattern. The invention is particularly useful for the preparation of thin lamella for viewing on a transmission electron microscope.

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing. Preferred embodiments of the present invention can also be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan only a “strip” of cells on the one edge of the array (along either the X axis or the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically “count” the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array.

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing. Preferred embodiments of the present invention can also be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan only a “strip” of cells on the one edge of the array (along either the X axis and the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically “count” the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array.

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing. Preferred embodiments of the present invention can also be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan only a “strip” of cells on the one edge of the array (along either the X axis and the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically “count” the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array.

Abstract: A charged particle beam system for processing substrates is disclosed, comprising a charged particle column, combination infrared radiation and visible light illumination and imaging subsystems, in-vacuum optics, and a precision stage for supporting and positioning the substrate alternately under the charged particle column and the imaging system. The axes of the charged particle column and imaging system are offset to enable much closer working distances for both imaging and beam processing than would be possible in a single integrated assembly. A method for extremely accurately calibrating the offset between the column and imaging system is disclosed, enabling beam processing at precisely-determined locations on the substrate. The imaging system is capable of locating sub-surface features on the substrate which cannot be seen using the charged particle beam. Two illumination modes are disclosed, enabling both bright-field and dark-field imaging in infrared radiation and visible light.

Abstract: A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O2, greatly increases the etch rate. In one example, polyimide material etched using a Xe+ plasma FIB with a beam energy from 8 keV to 14 keV and O2 as an etch-assisting gas, the increase in etch rate can approach 30x as compared to the default mill rate.

Abstract: An improved method and apparatus for imaging and milling a substrate using a FIB system. Preferred embodiments of the present invention use a mixture of light and heavy ions, focused to the same focal point by the same beam optics, to simultaneously mill the sample surface (primarily with the heavy ions) while the light ions penetrate deeper into the sample to allow the generation of images of subsurface features. Among other uses, preferred embodiments of the present invention provide improved methods of navigation and sample processing that can be used for various circuit edit applications, such as backside circuit edit.

Abstract: An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing. This invention demonstrates a method where high accuracy navigation to the site of interest within a relatively large local area (e.g. an area 200 ?m×200 ?m) is possible even where the stage/navigation system is not normally capable of such high accuracy navigation. The combination of large area, high-resolution scanning, digital zoom and registration of the image to an idealized coordinate system enables navigation around a local area without relying on stage movements. Once the image is acquired any sample or beam drift will not affect the alignment. Preferred embodiments thus allow accurate navigation to a site on a sample with sub-100 nm accuracy, even without a high-accuracy stage/navigation system.

Abstract: An improved method of high accuracy beam placement for local area navigation in the field of semiconductor chip manufacturing. Preferred embodiments of the present invention can also be used to rapidly navigate to one single bit cell in a memory array or similar structure, for example to characterize or correct a defect in that individual bit cell. High-resolution scanning is used to scan only a “strip” of cells on the one edge of the array (along either the X axis and the Y axis) to locate a row containing the desired cell followed by a similar high-speed scan along the located row (in the remaining direction) until the desired cell location is reached. This allows pattern-recognition tools to be used to automatically “count” the cells necessary to navigate to the desired cell, without the large expenditure of time required to image the entire array.