Abstract: Semiconductor chips and methods of manufacturing the same are provided. The semiconductor chip includes a substrate, an interlayer insulation layer including a bottom interlayer insulation layer on an upper surface of the substrate and a top interlayer insulation layer on the bottom interlayer insulation layer, an etch stop layer between the bottom interlayer insulation layer and the top interlayer insulation layer, a landing pad on the interlayer insulation layer, and a through via connected to the landing pad through the substrate, the interlayer insulation layer, and the etch stop layer. The etch stop layer is isolated from direct contact with the landing pad.

Abstract: An integrated circuit device includes a substrate, a landing pad on the substrate, and a through-via structure passing through the substrate and connected to the landing pad. The through-via structure may include a conductive plug, a first conductive barrier layer covering a sidewall and a lower surface of the conductive plug, and a second conductive barrier layer covering a sidewall of the first conductive barrier layer.

Abstract: Methods, devices, and apparatus for processing a strip of material including: measuring and feeding the strip of material to a predetermined length; and making broaching cuts on the strip of material using a plurality of cutting tools configured to make a plurality of angled cuts.

Abstract: Disclosed is a semiconductor device including a conductive pattern on a substrate, a passivation layer on the substrate and including an opening that partially exposes the conductive pattern, and a pad structure in the opening of the passivation layer and connected to the conductive pattern. The pad structure includes a first metal layer that fills the opening of the passivation layer and has a width greater than that of the opening, and a second metal layer on the first metal layer. The first metal layer has a first thickness at an outer wall of the first metal layer, a second thickness on a top surface of the passivation layer, and a third thickness on a top surface of the conductive pattern. The second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.

Abstract: A cable is provided having at least one elongated conductor surrounded by at least one cross-linked layer, said layer being obtained from a polymer composition comprising a polymer, a crosslinking agent, and an amine as co-crosslinking agent, wherein said amine has a nucleophilic value (N) of 14 or more.

Abstract: A semiconductor device includes a memory string coupled between a common source line and a bit line, the memory string including at least one first selection transistor, a plurality of memory cells, and a plurality of second selection transistors. The semiconductor device also includes selection lines respectively coupled to the second selection transistors. The semiconductor device further includes a control logic circuit configured to float a first group of selection lines from among the selection lines at a first time and configured to float a second group of selection lines from among the selection lines at a second time different from the first time.

Abstract: Disclosed is a 5G or pre-5G communication system to be provided so as to support a data transmission rate higher than that of a 4G communication system such as long term evolution (LTE). According to the present disclosure, a method for transmitting a signal in a communication system supporting multi-user access comprises the steps of: transmitting, to a receiving device, information indicating a codebook formed on the basis of at least two signal constellations for sparse code multiple access (SCMA) transmissions; and transmitting signals on the basis of the codebook, wherein the at least two signal constellations are generated on the basis of energy values of symbols of a pre-given mother signal constellation and sizes of the symbols of the mother signal constellation.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the same. The semiconductor memory device may include peripheral circuits configured to perform a verify operation on selected memory cells by applying a verify voltage to a word line, and perform a compensation program operation on the selected memory cells by applying a compensation program voltage to the word line; and a control logic configured to control the peripheral circuits such that the compensation program operation is performed by applying the compensation program voltage to the selected memory cells to be programmed to a selected threshold voltage distribution among the threshold voltage distributions other than a highest threshold voltage distribution, wherein the compensation program voltage has a positive voltage lower than the main program voltage most recently applied to the word line.

Abstract: Methods of removing metal from a portion of a substrate include exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent if the metal remaining on the portion of the substrate is deemed to be greater than the particular level.

Abstract: An auto brushing device for brushing a rule, including: at least one brushing roller configured to rotate to brush against the rule to remove various impurities; a first unit configured to control rotational speeds of the at least one brushing roller; and a second unit configured to control distances of the at least one brushing roller from the rule.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a plurality of pages each including a plurality of memory cells, peripheral circuits configured to perform a program operation of a selected page among the plurality of pages and a control logic configured to control the peripheral circuits such that a main program operation is performed on the selected page and, when the main program operation is completed, a compensation program operation is performed on memory cells having lower threshold voltage retention characteristics compared to remaining memory cells, among the memory cells included in the selected page.

Abstract: A semiconductor device includes a conductive component on a substrate, a passivation layer on the substrate and including an opening that exposes at least a portion of the conductive component, and a pad structure in the opening and located on the passivation layer, the pad structure being electrically connected to the conductive component. The pad structure includes a lower conductive layer conformally extending on an inner sidewall of the opening, the lower conductive layer including a conductive barrier layer, a first seed layer, an etch stop layer, and a second seed layer that are sequentially stacked, a first pad layer on the lower conductive layer and at least partially filling the opening, and a second pad layer on the first pad layer and being in contact with a peripheral portion of the lower conductive layer located on the top surface of the passivation layer.

Abstract: Provided is a piezoelectric speaker unit to be installed in a mobile terminal. The piezoelectric speaker unit includes a plate, a piezoelectric body attached to a central part of the plate, and an edge type support member which supports one surface of the plate along an edge thereof and provides a space therein in which the plate is deformable. Here, at least one opening, which has one side communicating with the space and the other side communicating with the outside of the support member to release sounds generated in the space by oscillation of the plate to the outside of the support member, is formed in the support member.

Abstract: A semiconductor device includes a conductive component on a substrate, a passivation layer on the substrate and including an opening that exposes at least a portion of the conductive component, and a pad structure in the opening and located on the passivation layer, the pad structure being electrically connected to the conductive component.

Abstract: An apparatus configured to produce a letterbox using a strip of material including: a processor configured to measure a first plurality of hole positions on a first end of the strip of material and a second plurality of hole positions on flanges of the strip of material; a puncher configured to punch the first plurality of holes on at least one of the first end and the second end of the strip of material according to the first plurality of hole positions, the puncher configured to punch the second plurality of holes on the flanges according to the second plurality of hole positions; a support structure; an auto rivet machine coupled to the support structure, the support structure configured to support and hold the auto rivet machine such that the auto rivet machine can be moved above the first and second plurality of holes on the letterbox to be riveted.

Abstract: A crosslinked composition for use as a sheath layer of cable is obtained from polymer blend having ethylene vinyl acetate copolymer (EVA), nitrile rubber (NBR) and crosslinking agent. The polymer blend further has a reactive polymer containing at least one nucleophilic or electrophilic functional group and a reactive compound selected from amphiphilic compound containing at least one nucleophilic or electrophilic functional group that can chemically react with nucleophilic or electrophilic functional group of the reactive polymer.

Abstract: According to one embodiment, a cup holder is disclosed. The cup holder comprises: a holder body; a thermoelectric element disposed at a lower part of the holder body; a heat sink disposed at a lower part of the thermoelectric element; and a fan disposed on a side surface of the holder body, and discharging, through the heat sink, air suctioned from the side surface of the holder body.

Abstract: An apparatus to produce a letterbox using a strip of material includes: a bender to receive and bend the strip of material into a desired shape of a letterbox including flanges and notches, and the bender to bend at least one end of the strip of material slightly to produce a slight bent; a processor to measure a first plurality of hole positions on a first end of the strip of material and a second plurality of hole positions on flanges of the strip of material, wherein the first plurality of hole positions on the first end are measured to match a first plurality of holes on a second end of the strip of material, wherein the second plurality of hole positions on the flanges are measured to match a second plurality of holes on a base plate; and a puncher to punch the first plurality of holes on at least one of the first end and the second end of the strip of material according to the first plurality of hole positions, and the puncher to punch the second plurality of holes on the flanges according to the second

Abstract: Provided are a current collector for a battery, including: a base material; adhesive layers positioned on the base material; and metal mesh layers positioned on the adhesive layers, in which the metal mesh layer includes a plurality of metal mesh patterns, and holes positioned between the metal mesh patterns, and a method of manufacturing the same. An active material is applied onto the metal mesh layer through the holes of the metal mesh layer, and thus a contact area of the metal mesh layer and the active material is increased, so that it is possible to restrict the active material from being deintercalated from the current collector and improve a cycle lifespan property of a battery.

Abstract: The disclosure provides a method and apparatus for forming a channel letter box using a profile. The method can include determining an incision position on one surface of the profile where at least one surface incision is to be made. The profile can be surface incised at the determined position. The profile can be folded at the incision position to form the channel letter box. The profile can have at least one rib on one surface. The method can also include cutting and attaching a top plate to the channel letter box, wherein a thickness of the top plate is substantially close to a distance from the top of the profile to the top of a top rib of the at least one rib.