Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: An integrated circuit includes multiple backside conductive layers disposed over a backside of a substrate. The multiple backside conductive layers each includes conductive segments. The conductive segments in at least one of the backside conductive layers are configured to transmit one or more power signals. The conductive segments of the multiple backside conductive layers cover select areas of the backside of the substrate, thereby leaving other areas of the backside of the substrate exposed.

Abstract: Trenches in which to form a back side isolation structure for an array of CMOS image sensors are formed by a cyclic process that allows the trenches to be kept narrow. Each cycle of the process includes etching to add a depth segment to the trenches and coating the depth segment with an etch-resistant coating. The following etch step will break through the etch-resistant coating at the bottom of the trench but the etch-resistant coating will remain in the upper part of the trench to limit lateral etching and substrate damage. The resulting trenches have a series of vertically spaced nodes. The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a substrate and a wafer disposed on the substrate. The wafer includes a p-doped layer disposed on the substrate; a first diode disposed on the p-doped layer; a second diode disposed on the p-doped layer; a third diode disposed on the p-doped layer; and a dielectric layer disposed on the substrate and covering the first, second, and third diodes. The first, second, and third diodes are disposed side by side.

Abstract: The present disclosure provides a method for generating a backbone network, an apparatus for generating a backbone network, a device, and a storage medium. The method includes: acquiring a set of a training image, a set of an inference image, and a set of an initial backbone network; training and inferring, for each initial backbone network in the set of the initial backbone network, the initial backbone network by using the set of the training image and the set of the inference image, to obtain an inference time and an inference accuracy of a trained backbone network in an inference process; determining a basic backbone network based on the inference time and the inference accuracy of the trained backbone network in the inference process; and obtaining a target backbone network based on the basic backbone network and a preset target network.

Abstract: A smart acoustic information recognition-based welded weld impact quality determination method and system, comprising: controlling a tip of an ultrasonic impact gun (1) to perform impact treatment on a welded weld with different treatment pressures, treatment speeds, treatment angles and impact frequencies, obtaining acoustic signals during the impact treatment, calculating feature values of the acoustic signals, and constructing an acoustic signal sample set including various stress conditions; marking the acoustic signal sample set according to impact treatment quality assessment results for the welded weld; establishing a multi-weight neural network model, and using the marked acoustic signal sample set to train the multi-weight neural network model; obtaining feature values of welded weld impact treatment acoustic signals to be determined, inputting the feature values into the trained multi-weight neural network model, and outputting determination results for welded weld impact treatment quality to be det

Abstract: Embodiments include accessing an image of a region of tissue demonstrating cancerous pathology; detecting a plurality of cells represented in the image; segmenting a cellular nucleus of a first member of the plurality of cells and a cellular nucleus of at least one second, different member of the plurality of cells; extracting a set of nuclear morphology features from the plurality of cells; constructing a feature driven local cell graph (FeDeG) based on the set of nuclear morphology features and a spatial relationship between the cellular nuclei using a mean-shift clustering approach; computing a set of FeDeG features based on the FeDeG; providing the FeDeG features to a machine learning classifier; receiving, from the machine learning classifier, a classification of the region of tissue as a long-term or a short-term survivor, based, at least in part, on the set of FeDeG features; and displaying the classification.

Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Abstract: Apparatus, systems and methods for irrigating lands are disclosed. In one example, an irrigation system is disclosed. The irrigation system includes a gate and a microcontroller unit (MCU). The gate is configured for adjusting a water flow for irrigating a piece of land. The MCU is configured for controlling the gate to adjust the water flow based on environmental information related to the piece of land.

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a substrate, semiconductor structures, an isolation layer, an adhesive layer, a metal layer, a metal nitride layer, a semiconductor layer, a profile modifier layer, and a disconnection structure. The semiconductor structures are disposed on the substrate. The isolation layer is disposed between the semiconductor structures. The metal layer is disposed on an adhesive layer. The metal nitride layer is disposed on the metal layer. The semiconductor layer is disposed on the metal nitride layer. The profile modifier layer is disposed on the semiconductor layer. The disconnection structure is disposed and extending from the profile modifier layer to the isolation layer. A first width of the disconnection structure in the profile modifier layer is substantially the same as a second width of the disconnection structure in the isolation layer.

Abstract: A display device includes a display panel. The display panel has a functional display area. The functional display area includes a plurality of display pixels and a plurality of light transmitting regions. The plurality of display pixels are around by the plurality of the light transmitting regions. A boundary between one of the plurality of display pixels and one of the plurality of light transmitting regions comprises an arc segment.

Abstract: Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.

Abstract: A first packet flow and a second packet flow support a first protocol, a third packet flow and a fourth packet flow support a second protocol, and a priority of the first protocol is lower than a priority of the second protocol. The first packet flow and the third packet flow are transmitted from a first ingress port to a first egress port. The second packet flow and the fourth packet flow are transmitted from a second ingress port to a second egress port. When the packet processing device is in a congested state, a bandwidth modulator performs a first suppression process on the first packet flow at the first ingress port, and the bandwidth modulator performs a second suppression process on the second packet flow at the second egress port or on the third packet flow at the first ingress port.

Abstract: Disclosed are an agarase mutant with improved thermal stability and application thereof, belonging to the fields of genetic engineering technology and enzyme engineering. The present disclosure provides an agarase mutant, which is obtained by mutating the amino acid at the 86th site, the 373rd site, the 374th site, the 496th site, the 507th site, or the 747th site of agarase with an amino acid sequence as shown in SEQ ID NO.1. The agarase mutant provided by the present disclosure improves the thermal stability and the hydrolytic activity of the agarase. Compared with the wild type enzyme, the mutant enzyme shows excellent heat resistance and can be industrially used at a relatively high temperature, so that the utilization rate of agar raw materials and the yield of oligosaccharides from agar are improved, and the mutant enzyme has a good industrial application prospect.

Abstract: An electronic device includes a substrate, a driving element, a first transparent conductive layer, an insulating layer, and a second transparent conductive layer. The driving element is disposed on the substrate and includes a drain electrode having a first edge. The first transparent conductive layer is disposed on the driving element. The insulating layer is disposed between the driving element and the first transparent conductive layer and includes a hole through which the first transparent conductive layer is electrically connected to the driving element. The second transparent conductive layer is disposed on the insulating layer. One of the first and second transparent conductive layers includes at least one slit, and the first or second transparent conductive layer that includes the at least one slit has a second edge. The second edge is located in the hole, and the at least one slit exposes the first edge of the drain electrode.

Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.

Abstract: An electronic device including a plurality of pixels and a driving element is provided. Each of the plurality of pixels includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. The driving element drives each first sub-pixel of the plurality of pixels.