Abstract: A method and a User Equipment (UE) for beam operations are provided. The method includes monitoring at least one of a plurality of Control Resource Sets (CORESETs) configured for the UE within an active Bandwidth Part (BWP) of a serving cell in a time slot; and applying a first Quasi Co-Location (QCL) assumption of a first CORESET of a set of one or more of the monitored at least one of the plurality of CORESETs to receive a Downlink (DL) Reference Signal (RS), wherein the first CORESET is associated with a monitored search space configured with a lowest CORESET Identity (ID) among the set of one or more of the monitored at least one of the plurality of CORESETs.

Abstract: A method and a kit for detecting Mycobacterium tuberculosis are provided. The method includes a step of performing a nested qPCR assay to a specimen. The nested qPCR assay includes a first round of amplification using external primers and a second round of amplification using internal primers and a probe. The external primers have sequences of SEQ ID NOs. 1 and 2, and the internal primers and the probe have sequences of SEQ ID NOs. 3 to 5.

Abstract: A cold plate is provided and includes: a housing disposed with a chamber; a base combined with the housing to form a working space separated from the chamber but connected with the chamber through an interconnecting structure to allow a working medium to flow within the chamber and the working space; a heat transfer structure disposed on the inner side of the base; and a pump disposed within the working space to drive the working medium in the working space. As such, the cold plate can provide better heat dissipation performance.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Abstract: Integrated circuit packages and methods of forming the same are discussed. In an embodiment, a device includes: a package substrate; a semiconductor device attached to the package substrate; an underfill between the semiconductor device and the package substrate; and a package stiffener attached to the package substrate, the package stiffener includes: a main body extending around the semiconductor device and the underfill in a top-down view, the main body having a first coefficient of thermal expansion; and pillars in the main body, each of the pillars extending from a top surface of the main body to a bottom surface of the main body, each of the pillars physically contacting the main body, the pillars having a second coefficient of thermal expansion, the second coefficient of thermal expansion being less than the first coefficient of thermal expansion.

Abstract: Some implementations described herein a provide a multi-die package and methods of formation. The multi-die package includes a dynamic random access memory integrated circuit die over a system-on-chip integrated circuit die, and a heat transfer component between the system-on-chip integrated circuit die and the dynamic random access memory integrated circuit die. The heat transfer component, which may correspond to a dome-shaped structure, may be on a surface of the system-on-chip integrated circuit die and enveloped by an underfill material between the system-on-chip integrated circuit die and the dynamic random access memory integrated circuit die. The heat transfer component, in combination with the underfill material, may be a portion of a thermal circuit having one or more thermal conductivity properties to quickly spread and transfer heat within the multi-die package so that a temperature of the system-on-chip integrated circuit die satisfies a threshold.

Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.

Abstract: A method of operating a memory device is provided. A clock signal is received. Each clock cycle of the clock signal initiates a write operation or a read operation in a memory device. A power nap period is then determined. The power nap period is compared with a clock cycle period to determine that the power nap period is less than the clock cycle period of the clock signal. A header control signal is generated in response to determining that the power nap period is less than the clock cycle period. The header control signal turns off a header of a component of the memory device.

Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.

Abstract: Disclosed herein are related to memory device including an adaptive word line control circuit. In one aspect, the memory device includes a memory cell and a word line driver coupled to the memory cell through a word line. In one aspect, the memory device includes an adaptive word line control circuit including two or more diodes connected in series, where one of the two or more diodes is coupled to the word line.

Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum voltage signal from among the multiple voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum voltage signal from among the multiple voltage signals to minimize power consumption.

Abstract: A wiring board includes an insulating layer, a wiring layer and a plurality of conductive columns. The insulating layer has a first surface and a second surface opposite to the first surface. The wiring layer is disposed in the insulating layer and has a third surface and a fourth surface opposite to the third surface. The insulating layer covers the third surface, and the second surface of the insulating layer is flush with the fourth surface of the wiring layer. The conductive columns are disposed in the insulating layer and connected to the wiring layer. The conductive columns extend from the third surface of the wiring layer to the first surface of the insulating layer, and protrude from the first surface.

Abstract: A memory device includes a memory cell array comprising a plurality of memory cells wherein each of the plurality of memory cells is configured to be in a data state, and a physically unclonable function (PUF) generator. The PUF generator further includes a first sense amplifier, coupled to the plurality of memory cells, wherein while the plurality of memory cells are being accessed, the first sense amplifier is configured to compare accessing speeds of first and second memory cells of the plurality of memory cells, and based on the comparison, provide a first output signal for generating a first PUF signature.

Abstract: A method of operating a memory device is provided. A clock signal is received. Each clock cycle of the clock signal initiates a write operation or a read operation in a memory device. A power nap period is then determined. The power nap period is compared with a clock cycle period to determine that the power nap period is less that the clock cycle period of the clock signal. A header control signal is generated in response to determining that the power nap period is less than the clock cycle period. The header control signal turns off a header of a component of the memory device.

Abstract: A method of operating a memory device is provide. A clock signal is received. Each clock cycle of the clock signal initiates a write operation or a read operation in a memory device. A power nap period is then determined. The power nap period is compare with a clock cycle period to determine that the power nap period is less that the clock cycle period of the clock signal. A header control signal is generated in response to determining that the power nap period is less than the clock cycle period. The header control signal turns off a header of a component of the memory device.

Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum voltage signal from among the multiple voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum voltage signal from among the multiple voltage signals to minimize power consumption.

Abstract: A wiring board includes an insulating layer, a wiring layer and a plurality of conductive columns. The insulating layer has a first surface and a second surface opposite to the first surface. The wiring layer is disposed in the insulating layer and has a third surface and a fourth surface opposite to the third surface. The insulating layer covers the third surface, and the second surface of the insulating layer is flush with the fourth surface of the wiring layer. The conductive columns are disposed in the insulating layer and connected to the wiring layer. The conductive columns extend from the third surface of the wiring layer to the first surface of the insulating layer, and protrude from the first surface.

Abstract: A circuit substrate has an open substrate, a heat-dissipation block, multiple high thermal conductivity members, a first dielectric layer, a second dielectric layer, multiple first heat conductive members, and multiple second heat conductive members. The heat-dissipation block is disposed in the open substrate. Multiple high thermal conductivity members are mounted through the heat-dissipation block. The first dielectric layer exposes a part of one of two surfaces of the heat-dissipation block. The second dielectric layer exposes a part of the other surface of the heat-dissipation block. The first heat conductive members are in contact with the heat-dissipation block exposed from the first dielectric layer. The second heat conductive members are in contact with the part of the heat-dissipation block exposed from the second dielectric layer.

Abstract: A method of manufacturing circuit board structure includes forming a sacrificial layer having first openings on a substrate; forming a metal layer on the sacrificial layer; forming a patterned photoresist layer having second openings over the sacrificial layer, in which the second openings are connected to the first openings and expose a portion of the metal layer; forming a first circuit layer filling the second openings and the first openings; forming a first dielectric layer over the sacrificial layer and covering the metal layer, in which the first dielectric layer has third openings exposing the first circuit layer; forming a second circuit layer filling the third openings and covering a portion of the first dielectric layer; removing the substrate to expose the sacrificial layer, a portion of the metal layer and a portion of the first circuit layer; and removing the sacrificial layer and the metal layer.

Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple operational voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum operational voltage signal from among the multiple operational voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum operational voltage signal from among the multiple operational voltage signals to minimize power consumption.