Patents by Inventor Chien-Chen Lin
Chien-Chen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11301148Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple operational voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum operational voltage signal from among the multiple operational voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum operational voltage signal from among the multiple operational voltage signals to minimize power consumption.Type: GrantFiled: March 15, 2021Date of Patent: April 12, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Hao Hsu, Cheng Hung Lee, Chen-Lin Yang, Chiting Cheng, Fu-An Wu, Hung-Jen Liao, Jung-Ping Yang, Jonathan Tsung-Yung Chang, Wei Min Chan, Yen-Huei Chen, Yangsyu Lin, Chien-Chen Lin
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Patent number: 11263331Abstract: An electronic device for checking a randomness of an identification key device, a random key checker circuit for an electronic device and a method of checking randomness for an electronic device. An electronic device for checking a randomness of an identification key device includes an identification key generator, configured to generate an identification key. A random key checker circuit, configured to receive the identification key from the identification key generator, calculates a randomness value of the identification key according to the identification key for checking a randomness of the identification key and generates an output of the identification key with high randomness.Type: GrantFiled: September 5, 2019Date of Patent: March 1, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Chen Lin, Hidehiro Fujiwara, Wei-Min Chan, Yen-Huei Chen, Shih-Lien Linus Lu
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Publication number: 20220051702Abstract: A method of operating a memory device is provide. A clock signal is received. Each clock cycle of the clock signal initiates a write operation or a read operation in a memory device. A power nap period is then determined. The power nap period is compare with a clock cycle period to determine that the power nap period is less that the clock cycle period of the clock signal. A header control signal is generated in response to determining that the power nap period is less than the clock cycle period. The header control signal turns off a header of a component of the memory device.Type: ApplicationFiled: August 12, 2020Publication date: February 17, 2022Inventors: Chien-Chen Lin, Wei Min Chan
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Patent number: 11222838Abstract: An embedded component substrate structure and a method for manufacturing the same, with a carrier structure being formed with a groove on a top, and a chip structure with a plurality of conductors disposed in the groove. Dielectric layers are disposed on a top and a bottom of the carrier structure, and two opposite ends of multiple circuits in the carrier structure are exposed to the dielectric layers. Circuit build-up structures are disposed on the dielectric layers, and electrically connect to the circuits of the carrier structure.Type: GrantFiled: July 31, 2020Date of Patent: January 11, 2022Assignee: UNIMICRON TECHNOLOGY CORPORATIONInventor: Chien-Chen Lin
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Publication number: 20210383847Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Inventors: Wei-Cheng Wu, Kao-Cheng Lin, Chih-Cheng Yu, Pei-Yuan Li, Chien-Chen Lin, Wei Min Chan, Yen-Huei Chen
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Patent number: 11196574Abstract: A physically unclonable function (PUF) generator includes a first sense amplifier that has a first input terminal configured to receive a signal from a first memory cell of a plurality of memory cells, and a second input terminal configured to receive a signal from a second memory cell of the plurality of memory cells. The first sense amplifier is configured to compare accessing speeds of the first and second memory cells of the plurality of memory cells. Based on the comparison of the accessing speeds, the sense amplifier provides a first output signal for generating a PUF signature. A controller is configured to output an enable signal to the first sense amplifier, which has a first input terminal configured to receive a signal from a bit line of the first memory cell and a second input terminal configured to receive a signal from a bit line of the second memory cell.Type: GrantFiled: July 25, 2018Date of Patent: December 7, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Chen Lin, Wei Min Chan, Chih-Yu Lin, Shih-Lien Linus Lu
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Publication number: 20210375737Abstract: An embedded component substrate structure and a method for manufacturing the same, with a carrier structure being formed with a groove on a top, and a chip structure with a plurality of conductors disposed in the groove. Dielectric layers are disposed on a top and a bottom of the carrier structure, and two opposite ends of multiple circuits in the carrier structure are exposed to the dielectric layers. Circuit build-up structures are disposed on the dielectric layers, and electrically connect to the circuits of the carrier structure.Type: ApplicationFiled: July 31, 2020Publication date: December 2, 2021Inventor: CHIEN-CHEN LIN
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Patent number: 11176997Abstract: A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.Type: GrantFiled: February 26, 2021Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Chien-Chen Lin
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Patent number: 11153963Abstract: A circuit carrier structure includes an inner circuit structure, at least one first circuit layer, and at least one heat dissipating structure. The inner circuit structure has a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface of the inner circuit structure. The heat dissipating structure is disposed in the first circuit layer. The heat dissipating structure includes a first heat dissipating pattern, a second heat dissipating pattern and an interlayer metal layer. The first heat dissipating pattern is embedded in the corresponding first circuit layer. The second heat dissipating pattern is disposed on the first heat dissipating pattern. The interlayer metal layer is disposed between the first heat dissipating pattern and the second heat dissipating pattern. A manufacturing method of the circuit carrier structure is also provided.Type: GrantFiled: April 10, 2020Date of Patent: October 19, 2021Assignee: Unimicron Technology Corp.Inventors: Chang-Fu Chen, Ho-Shing Lee, Chien-Chen Lin
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Publication number: 20210298184Abstract: A circuit board structure includes a circuit layer structure, an electronic component, and a stopper. The circuit layer structure includes a plurality of dielectric layers and circuits in the dielectric layers. The electronic component is disposed in the circuit layer structure; the electronic component includes a chip and a conductive bump; the chip has a first surface and a second surface that are oppositely disposed, and the first surface of the chip contacts one of the dielectric layers; the conductive bump is on the second surface of the chip and is electrically connected to the chip. The stopper is within the circuit layer structure and abuts against the conductive bump. A method for fabricating a circuit board structure is also provided herein.Type: ApplicationFiled: June 4, 2021Publication date: September 23, 2021Inventor: Chien-Chen LIN
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Publication number: 20210289614Abstract: A circuit carrier structure includes an inner circuit structure, at least one first circuit layer, and at least one heat dissipating structure. The inner circuit structure has a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface of the inner circuit structure. The heat dissipating structure is disposed in the first circuit layer. The heat dissipating structure includes a first heat dissipating pattern, a second heat dissipating pattern and an interlayer metal layer. The first heat dissipating pattern is embedded in the corresponding first circuit layer. The second heat dissipating pattern is disposed on the first heat dissipating pattern. The interlayer metal layer is disposed between the first heat dissipating pattern and the second heat dissipating pattern. A manufacturing method of the circuit carrier structure is also provided.Type: ApplicationFiled: April 10, 2020Publication date: September 16, 2021Applicant: Unimicron Technology Corp.Inventors: Chang-Fu Chen, Ho-Shing Lee, Chien-Chen Lin
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Patent number: 11100964Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.Type: GrantFiled: February 10, 2020Date of Patent: August 24, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Wei-Cheng Wu, Kao-Cheng Lin, Chih-Cheng Yu, Pei-Yuan Li, Chien-Chen Lin, Wei Min Chan, Yen-Huei Chen
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Publication number: 20210249057Abstract: Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.Type: ApplicationFiled: February 10, 2020Publication date: August 12, 2021Inventors: Wei-Cheng Wu, Kao-Cheng Lin, Chih-Cheng Yu, Pei-Yuan Li, Chien-Chen Lin, Wei Min Chan, Yen-Huei Chen
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Publication number: 20210242123Abstract: A method of manufacturing circuit board structure includes forming a sacrificial layer having first openings on a substrate; forming a metal layer on the sacrificial layer; forming a patterned photoresist layer having second openings over the sacrificial layer, in which the second openings are connected to the first openings and expose a portion of the metal layer; forming a first circuit layer filling the second openings and the first openings; forming a first dielectric layer over the sacrificial layer and covering the metal layer, in which the first dielectric layer has third openings exposing the first circuit layer; forming a second circuit layer filling the third openings and covering a portion of the first dielectric layer; removing the substrate to expose the sacrificial layer, a portion of the metal layer and a portion of the first circuit layer; and removing the sacrificial layer and the metal layer.Type: ApplicationFiled: April 20, 2021Publication date: August 5, 2021Inventor: Chien-Chen LIN
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Patent number: 11058012Abstract: A circuit board structure includes a circuit layer structure, an electronic component, and a stopper. The circuit layer structure includes a plurality of dielectric layers and circuits in the dielectric layers. The electronic component is disposed in the circuit layer structure; the electronic component includes a chip and a conductive bump; the chip has a first surface and a second surface that are oppositely disposed, and the first surface of the chip contacts one of the dielectric layers; the conductive bump is on the second surface of the chip and is electrically connected to the chip. The stopper is within the circuit layer structure and abuts against the conductive bump. A method for fabricating a circuit board structure is also provided herein.Type: GrantFiled: August 20, 2019Date of Patent: July 6, 2021Assignee: Unimicron Technology Corp.Inventor: Chien-Chen Lin
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Publication number: 20210200452Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple operational voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum operational voltage signal from among the multiple operational voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum operational voltage signal from among the multiple operational voltage signals to minimize power consumption.Type: ApplicationFiled: March 15, 2021Publication date: July 1, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Hao HSU, Cheng Hung LEE, Chen-Lin YANG, Chiting CHENG, Fu-An WU, Hung-Jen LIAO, Jung-Ping YANG, Jonathan Tsung-Yung CHANG, Wei Min CHAN, Yen-Huei CHEN, Yangsyu LIN, Chien-Chen LIN
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Publication number: 20210201999Abstract: A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.Type: ApplicationFiled: February 26, 2021Publication date: July 1, 2021Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Chien-Chen Lin
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Publication number: 20210159142Abstract: A chip package structure includes a circuit structure, a redistribution structure, a heat conductive component, a chip, and a heat sink. The circuit structure includes a first circuit layer. The redistribution structure is disposed on the circuit structure and includes a second circuit layer, wherein the redistribution structure has an opening. The heat conductive component is disposed on the circuit structure and covered by the redistribution structure. The heat conductive component has a horizontal portion and a vertical portion. The horizontal portion extends toward the opening until it exceeds the opening. The vertical portion extends upward beyond the top surface of the redistribution structure from a part of the horizontal portion. The chip is disposed in the opening, and the bottom of the chip contacts the heat conductive component. The heat sink is disposed over the redistribution structure and the chip.Type: ApplicationFiled: February 2, 2021Publication date: May 27, 2021Inventors: Tzu-Hsuan WANG, Chien-Chen LIN, Kuan-Wen FONG
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Patent number: 11011458Abstract: A method of manufacturing circuit board structure includes forming a sacrificial layer having first openings on a substrate; forming a metal layer on the sacrificial layer; forming a patterned photoresist layer having second openings over the sacrificial layer, in which the second openings are connected to the first openings and expose a portion of the metal layer; forming a first circuit layer filling the second openings and the first openings; forming a first dielectric layer over the sacrificial layer and covering the metal layer, in which the first dielectric layer has third openings exposing the first circuit layer; forming a second circuit layer filling the third openings and covering a portion of the first dielectric layer; removing the substrate to expose the sacrificial layer, a portion of the metal layer and a portion of the first circuit layer; and removing the sacrificial layer and the metal layer.Type: GrantFiled: September 23, 2019Date of Patent: May 18, 2021Assignee: Unimicron Technology Corp.Inventor: Chien-Chen Lin
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Patent number: 11012246Abstract: A memory device includes a memory block comprises a plurality of bits, wherein at least a first bit of the plurality of bits presents an initial logic state each time it is powered on; a start-up circuit configured to power on and off the memory block N times, where N is an odd integer greater than 1, and wherein the at least first bit presents an initial state after each respective power cycle of the memory block; and an authentication circuit, coupled to the memory block, and comprising an election engine that is configured to elect an initial state that occurs (N+1)/2 or more times after N power cycles that are performed by the start-up circuit, as a majority initial logic state for the first bit.Type: GrantFiled: September 8, 2016Date of Patent: May 18, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Lien Linus Lu, Wei-Min Chan, Chien-Chen Lin