Abstract: Described is an apparatus 1T-1 Magnetic Tunnel Junction (MTJ) Spin Hall Magnetic Random Access Memory (MRAM) bit-cell and array, and method of forming such. The apparatus comprises: a select line; an interconnect with Spin Hall Effect (SHE) material, the interconnect coupled to a write bit line; a transistor coupled to the select line and the interconnect, the transistor controllable by a word line; and a MTJ device having a free magnetic layer coupled to the interconnect.

Abstract: An embodiment includes a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major axis, corresponding to channel length, and a minor axis that corresponds to channel width and is orthogonal to the major axis; (b) the channel length is less than 10 nm long; (c) the source is doped with a first polarity and has a first conduction band; (d) the drain is doped with a second polarity, which is opposite the first polarity, and the drain has a second conduction band with higher energy than the first conduction band. Other embodiments are described herein.

Abstract: One embodiment includes a metal layer including first and second metal portions; a ferromagnetic layer including a first ferromagnetic portion that directly contacts the first metal portion and a second ferromagnetic portion that directly contacts the second metal portion; and a first metal non-magnetic interconnect coupling the first ferromagnetic portion to the second ferromagnetic portion. The spin interconnect conveys spin polarized current suitable for spin logic circuits. The interconnect may be included in a current repeater such as an inverter or buffer. The interconnect may perform regeneration of spin signals. Some embodiments extend spin interconnects into three dimensions (e.g., vertically across layers of a device) using vertical non-magnetic metal interconnects.

Abstract: An embodiment includes a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major axis, corresponding to channel length, and a minor axis that corresponds to channel width and is orthogonal to the major axis; (b) the channel length is less than 10 nm long; (c) the source is doped with a first polarity and has a first conduction band; (d) the drain is doped with a second polarity, which is opposite the first polarity, and the drain has a second conduction band with higher energy than the first conduction band. Other embodiments are described herein.

Abstract: One embodiment includes a metal layer including first and second metal portions; a ferromagnetic layer including a first ferromagnetic portion that directly contacts the first metal portion and a second ferromagnetic portion that directly contacts the second metal portion; and a first metal non-magnetic interconnect coupling the first ferromagnetic portion to the second ferromagnetic portion. The spin interconnect conveys spin polarized current suitable for spin logic circuits. The interconnect may be included in a current repeater such as an inverter or buffer. The interconnect may perform regeneration of spin signals. Some embodiments extend spin interconnects into three dimensions (e.g., vertically across layers of a device) using vertical non-magnetic metal interconnects.

Abstract: An embodiment of the invention includes a memory cell having a magnet layer coupled to a metal layer and read line. The metal layer is also coupled to write and sense lines. During a write operation charge current is supplied to the metal layer via the write line and induces spin current and a magnetic state within the magnet layer based on the spin Hall effect. During a read operation read current is supplied, via the read line, to the magnet layer and then the metal layer and induces another spin current, within the metal layer, that generates an electric field and voltage, based on inverse spin Hall effect, at a sense node coupled to the sense line. The voltage polarity is based on the aforementioned magnetic state. The memory operates with a low supply voltage to drive charge, read, and spin currents. Other embodiments are described herein.

Abstract: A method of operating an optical isolator having first and second optical splitter-combiners disposed within a semiconductor die. The optical splitter-combiners are coupled together into an interferometer configuration by first and second waveguide sections also disposed in the semiconductor die. A non-reciprocal optical phase shift element is disposed within the semiconductor die.

Abstract: An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.

Abstract: An integrated structure includes front and rear facets optically coupled by a waveguide passing through the integrated structure. The integrated structure includes a gain section and a reflector optically coupled to the gain section by the waveguide, the reflector to emit an optical output. A modulator is optically coupled to the reflector by the waveguide, the modulator to modulate the optical output. And a control section disposed along the waveguide.

Abstract: Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the substrate, a first doped layer on the ferromagnetic semiconductor layer, and a second doped layer on the first doped layer.

Abstract: An optical isolator includes first and second optical splitter-combiners disposed within a semiconductor die. The optical splitter-combiners are coupled together into an interferometer configuration by first and second waveguide sections also disposed in the semiconductor die. A non-reciprocal optical phase shift element is disposed within the semiconductor die and includes the first waveguide section passing through the non-reciprocal optical phase shift element. The optical isolator is configured such that forward propagating waves are constructively recombined by the second optical splitter-combiner while reverse propagating wave are destructively recombined by the first optical splitter-combiner.

Abstract: An integratable optical isolator includes a polarizer, a non-reciprocal rotator, and a reciprocal rotator. The polarizer includes first and second ports. The polarizer is configured to receive a forward propagating wave at the first port and to output a polarized forward propagating wave having a first plane of polarization at the second port. The non-reciprocal rotator is coupled to receive the polarized forward propagating wave from the second port of the polarizer. The non-reciprocal rotator rotates the polarized forward propagating wave from the first plane of polarization to a second plane of polarization. The reciprocal rotator is coupled to the non-reciprocal rotator to receive the polarized forward propagating wave. The reciprocal rotator rotates the polarized forward propagating wave from the second plane of polarization back to the first plane of polarization.

Abstract: An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.

Abstract: Semi-integrated external cavity diode laser (ECDL) designs including integrated structures comprising a gain section, modulator section, and optional phase control section. Each integrated structure includes a waveguide that passes through each of the sections, with the waveguide further including an in-waveguide mirror. The in-waveguide mirror defines one end of an “effective” laser cavity, with the other end defined by a reflective element disposed generally opposite a rear facet of the integrated structure, forming an external cavity therebetween. The in-waveguide mirror is formed by using a focused ion beam (FIB) cut through the waveguide, or by etching one or more trenches through the waveguide and backfilling the trenches using a re-grown crystal or amorphous material deposition process. A tunable filter is disposed in the external cavity to effectuate tuning of the laser.

Abstract: In embodiments of the present invention, a non-blocking quantum interference switch includes a segmented electron wave coupler that splits an electron wave and couples its two parts to two arms of a Mach Zehnder interferometer. A voltage may be applied to an interferometer gate electrode to change the phase of the electron wave traveling in that arm. A second segmented electron wave coupler may receive the two electron waves from the interferometer arms and recombine them into one electron wave. If the two electron waves interfere constructively, then the recombined electron wave exits through one switch output port, which may be a “logical zero” switch port, and if the two electron waves interfere destructively, then the recombined electron wave exits through a second switch output port, which may be a “logical one” switch port.

Abstract: Provided are a method and a system, wherein optical beams of a plurality of wavelengths are directed through a plurality of optical devices, wherein waveguides comprising the optical devices have different fabrication errors, and wherein the waveguides have a plurality of waveguide lengths and a plurality of waveguide widths. Optical phase errors corresponding to the waveguides are measured by the optical devices. A determination is made of the components of the optical phase errors for the waveguides from the measured phase errors.

Abstract: An optical element, such as a waveguide or fiber ribbon, may be formed with an edge surface that reduces back reflections when light travels between optical elements butted against one another. Instead of cutting the surface at an oblique angle to the plane of the element, the surface may be cut transversely to this plane but at an angle to the optical axis, in order to facilitate the fabrication of an appropriately inclined optical interface.

Abstract: Spin-orbital quantum cellular automata logic devices and integrated circuits in the form of a substrate having a thin film of material on the substrate having strongly coupled spin-orbital states, the thin film being patterned to define at least one input and at least one output, and to perform at least one logic operation by associated arrangement of the spin-orbital states between the input and the output. The logic devices and integrated circuits further include an input device at each input to define the spin-orbital states at each input, and an output sensor at each output for sensing the spin-orbital states of the thin film at the output. In an integrated circuit, the output of one gate or circuit, in the form of the ferromagnetically aligned spins, can be directly coupled to the next gate or circuit, so that entire circuits can be fabricated and effectively interconnected, only requiring interfacing for overall.

Abstract: Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the substrate, a first doped layer on the ferromagnetic semiconductor layer, and a second doped layer on the first doped layer.

Abstract: An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.