Abstract: Disclosed is a dip-coating method as a method of coating an outer surface of a target mold including steps of: preparing and putting a supporting liquid in a container; applying a coating material to the target mold; dipping the target mold in the supporting liquid; shaking the target mold surrounded by the coating material in the supporting liquid; curing the coating material surrounding the target mold in the supporting liquid; and taking out the coated target mold from the supporting liquid.

Abstract: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

Abstract: Provided is a compact-sized tape measure including a housing, a reel rotatably mounted in the housing, and a blade wound on an outer surface of the reel and drawn out through an inlet of the housing, in which the reel includes a spring providing a force for winding the blade and a bobbin providing an inner space receiving the spring and an outer space for winding and storing the blade, and a width of a spring receiving space capable of receiving the spring in the inner space is larger than a width of a blade receiving space capable of receiving the blade in the outer space.

Abstract: The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m2/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.

Abstract: A semiconductor device includes at least two die stacked on and electrically coupled to an underlying buffer die, which includes a delay control circuit therein. The delay control circuit is configured to: (i) receive and selectively delay test inputs for testing the at least two die, and (ii) transfer test inputs and a delayed version of the test inputs to a first one of the at least two die and a second one of the at least two die, respectively, during test mode operation. The at least two die may include a vertical stack of N (N>2) die on the buffer die and the delay control circuit may include a timing control circuit therein that is configured to supply test inputs to each of the N die in a staged manner so that commencement of respective test modes within each of the N die using the test inputs are out-of-sync relative to each other.

Abstract: The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %.

Abstract: One technical problem to be solved by the present invention relates to a device and a method for detecting surrounding vehicles, which are capable of correcting information on detected surrounding vehicles on the basis of the degree of energy necessary for cars to normally move along lanes and leave the corresponding lanes.

Abstract: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

Abstract: Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.

Abstract: A cleaning composition includes an organic solvent, an organic acid, a chelating agent, a surfactant containing at least one hydroxyl group (OH) at the end, and an ultra pure water, wherein a pH value of the cleaning composition is equal to or higher than 12.

Abstract: Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.

Abstract: There are provided an insulating film, a printed circuit board including the insulating film, and a method of manufacturing the printed circuit board. The insulating film includes a first insulating material; a second insulating material; and a metal thin film disposed between the first insulating material and the second insulating material.

Abstract: The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m2/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.

Abstract: The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %.

Abstract: One technical problem to be solved by the present invention relates to a device and a method for detecting surrounding vehicles, which are capable of correcting information on detected surrounding vehicles on the basis of the degree of energy necessary for cars to normally move along lanes and leave the corresponding lanes.

Abstract: Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor.

Abstract: The present invention relates to a CMP slurry composition for polishing copper, comprising: polishing particles; a complexing agent; a corrosion inhibitor; and deionized water. The complexing agent comprises one or more organic acids selected from oxalic acid, malic acid, malonic acid, and formic acid, and glycine.

Abstract: A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a width that is wider than a width of the rest of the deep trench; a compressive stress layer against the substrate in the lower portion; a metal-insulator-metal (MIM) stack over the compressive stress layer, the MIM stack including a node dielectric between an inner electrode and an outer electrode; and a semiconductor core within the MIM stack.

Abstract: A cleaning composition includes an organic solvent, an organic acid, a chelating agent, a surfactant containing at least one hydroxyl group (OH) at the end, and an ultra pure water, wherein a pH value of the cleaning composition is equal to or higher than 12.

Abstract: A flexible organic light-emitting display apparatus includes a flexible substrate, a barrier layer on the flexible substrate, a display portion on the barrier layer, an encapsulation layer covering the display portion, and a porous layer between the flexible substrate and the display portion.