Abstract: Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; enlarging a width of a lower portion of the deep trench to be wider than a width of the rest of the deep trench; epitaxially forming a compressive stress layer in the lower portion of the deep trench; forming a metal-insulator-metal (MIM) stack within the lower portion of the deep trench; and filling a remaining portion of the deep trench with a semiconductor. Alternatively to forming the compressive stress layer or in addition thereto, a silicide may be formed by co-deposition of a refractory metal and silicon.

Abstract: The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

Abstract: There are provided an insulating film, a printed circuit board including the insulating film, and a method of manufacturing the printed circuit board. The insulating film includes a first insulating material; a second insulating material; and a metal thin film disposed between the first insulating material and the second insulating material.

Abstract: A flexible organic light-emitting display apparatus includes a flexible substrate, a barrier layer on the flexible substrate, a display portion on the barrier layer, an encapsulation layer covering the display portion, and a moisture absorption layer between the flexible substrate and the display portion.

Abstract: The present invention relates to a CMP slurry composition for polishing copper, comprising: polishing particles; a complexing agent; a corrosion inhibitor; and deionized water. The complexing agent comprises one or more organic acids selected from oxalic acid, malic acid, malonic acid, and formic acid, and glycine.

Abstract: Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor.

Abstract: A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a width that is wider than a width of the rest of the deep trench; a compressive stress layer against the substrate in the lower portion; a metal-insulator-metal (MIM) stack over the compressive stress layer, the MIM stack including a node dielectric between an inner electrode and an outer electrode; and a semiconductor core within the MIM stack.

Abstract: Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; enlarging a width of a lower portion of the deep trench to be wider than a width of the rest of the deep trench; epitaxially forming a compressive stress layer in the lower portion of the deep trench; forming a metal-insulator-metal (MIM) stack within the lower portion of the deep trench; and filling a remaining portion of the deep trench with a semiconductor. Alternatively to forming the compressive stress layer or in addition thereto, a silicide may be formed by co-deposition of a refractory metal and silicon.

Abstract: A UV curing resin injection apparatus for treating an aneurysm, includes a catheter, a light transmission tube disposed at an inner side of the catheter to transmit UV light, and a connection tube disposed at the inner side of the catheter to be spaced from the light transmission tube and configured to transfer a UV curing resin, wherein the light transmission tube is formed independently from the connection tube.

Abstract: A flexible organic light-emitting display apparatus includes a flexible substrate, a barrier layer on the flexible substrate, a display portion on the barrier layer, an encapsulation layer covering the display portion, and a moisture absorption layer between the flexible substrate and the display portion.

Abstract: A flexible organic light-emitting display apparatus includes a flexible substrate, a barrier layer on the flexible substrate, a display portion on the barrier layer, an encapsulation layer covering the display portion, and a porous layer between the flexible substrate and the display portion.

Abstract: A method of manufacturing an organic light emitting diode (OLED) display is disclosed. In one aspect, the method includes preparing a substrate, forming a spacer on the substrate along an edge of the substrate, forming a driving circuit and an organic light emitting diode on the substrate to be surrounded by the spacer and forming an encapsulation thin film so as to substantially cover the driving circuit and the organic light emitting diodel. The mask that is used in the forming of the driving circuit and the organic light emitting diode is supported by and contacts the spacer.

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)??Formula 1 wherein, about 0.75?x/z?about 3.15, and about 0.55?y/z? about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract: A light emitting device includes a substrate and a plurality of protrusions protruding from a top surface of the substrate. A first semiconductor layer is provided on top surfaces of the protrusions and a plurality of seed patterns protrudes from a bottom surface of the first semiconductor layer toward the protrusions. A medium layer is provided between the protrusions and a light emitting structure on a top surface of the first semiconductor layer. The bottom surface of the first semiconductor layer is located at a higher position than that of each of the protrusions, and the first semiconductor layer contacts a c-plane of each protrusion.

Abstract: Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Abstract: In an organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus comprises: a substrate; a light-emitting unit formed on the substrate; and an encapsulation film, which covers the light-emitting unit on the substrate, and which includes a plurality of organic layers and a plurality of inorganic layers which are alternately stacked.

Abstract: In a flat panel display device and a method of manufacturing the same, the flat panel display device is manufactured by forming a display unit on a substrate, forming a hydrophobic barrier layer for preventing a material of an organic layer from flowing around the display unit, and forming a thin film sealing layer by alternately stacking an inorganic layer and the organic layer on the display unit. Accordingly, formation of an edge tail of the organic layer is prevented, thereby preventing penetration of external moisture.

Abstract: Disclosed herein is a tape measure with a self-regulating speed control mechanism. In the present invention, when a bobbin rotates, a rubber roller rotatably provided on a movable mounting plate alternately comes into contact with an inner surface of a support ring and a rubber acceleration prevention member provided on the inner surface of the support ring, so that the speed of the bobbin can be smoothly and reliably reduced.

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)??Formula 1 wherein, about 0.75?x/z?about 3.15, and about 0.55?y/z?about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the display includes i) a substrate, ii) a driving circuit formed on the substrate, iii) an organic light emitting diode formed on the substrate and electrically connected to the driving circuit, iv) an encapsulation thin film formed on the driving circuit and organic light emitting diode and v) a spacer formed on the substrate and surrounding the encapsulation thin film.