Abstract: Provided are a light emitting device and a light emitting device package. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a first electrode on the first conductive type semiconductor layer, the first electrode being electrically connected to the first conductive type semiconductor layer; a plurality of reflective islands on the second conductive type semiconductor layer; a second electrode on the second conductive type semiconductor layer and the plurality of reflective islands, the second electrode being electrically connected to the second conductive type semiconductor layer; and a conductive support member on the second electrode.

Abstract: Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a first conductive semiconductor layer; a superlattice layer on the first conductive semiconductor layer; an active layer on the superlattice layer; and a second conductive semiconductor layer on the active layer. The superlattice layer comprises InxGa(1?x)N(0<x<1) doped with an n-type dopant and undoped InyGa(1?y)N(0<y<1).

Abstract: A manufacturing method of an organic light emitting diode (OLED) display device includes forming a thin film transistor and an organic light emitting diode in a display area of a first substrate, forming a thin film encapsulation layer that has a layering structure of an organic film and an inorganic film on one substrate of the first substrate and a second substrate, forming a sealing member by coating a sealing material that includes an inorganic sealant and an organic compound on an edge of the second substrate, removing the organic compound of the sealing member by baking the sealing member, layering the second substrate on the first substrate so that the sealing member contacts the first substrate, dissolving the sealing member by using a laser beam, solidifying the sealing member, attaching the sealing member to the first substrate, and removing the second substrate from the sealing member.

Abstract: Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

Abstract: Disclosed herein is a tape measure with a self-regulating speed control mechanism. In the present invention, when a bobbin rotates, a rubber roller rotatably provided on a movable mounting plate alternately comes into contact with an inner surface of a support ring and a rubber acceleration prevention member provided on the inner surface of the support ring, so that the speed of the bobbin can be smoothly and reliably reduced.

Abstract: Disclosed herein is a tape measure with a self-regulating speed control mechanism. In the present invention, when a bobbin rotates, a rubber roller rotatably provided on a movable mounting plate alternately comes into contact with an inner surface of a support ring and a rubber acceleration prevention member provided on the inner surface of the support ring, so that the speed of the bobbin can be smoothly and reliably reduced.

Abstract: In an organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus comprises: a substrate; a light-emitting unit formed on the substrate; and an encapsulation film, which covers the light-emitting unit on the substrate, and which includes a plurality of organic layers and a plurality of inorganic layers which are alternately stacked.

Abstract: In a flat panel display device and a method of manufacturing the same, the flat panel display device is manufactured by forming a display unit on a substrate, forming a hydrophobic barrier layer for preventing a material of an organic layer from flowing around the display unit, and forming a thin film sealing layer by alternately stacking an inorganic layer and the organic layer on the display unit. Accordingly, formation of an edge tail of the organic layer is prevented, thereby preventing penetration of external moisture.

Abstract: Provided is an organic light emitting display apparatus in which process efficiency and contrast are increased. The organic light emitting display apparatus includes a substrate, a display unit that is formed on the substrate and includes an organic light emitting device, an encapsulation layer that is formed on the display unit so as to encapsulate the display unit, a color filter layer that is formed on the encapsulation layer, a protection layer that is formed on the color filter layer, and a black matrix that is formed on the protection layer. The black matrix is aligned not to overlap the color filter layer.

Abstract: A manufacturing method of an organic light emitting diode (OLED) display device includes forming a thin film transistor and an organic light emitting diode in a display area of a first substrate, forming a thin film encapsulation layer that has a layering structure of an organic film and an inorganic film on one substrate of the first substrate and a second substrate, forming a sealing member by coating a sealing material that includes an inorganic sealant and an organic compound on an edge of the second substrate, removing the organic compound of the sealing member by baking the sealing member, layering the second substrate on the first substrate so that the sealing member contacts the first substrate, dissolving the sealing member by using a laser beam, solidifying the sealing member, attaching the sealing member to the first substrate, and removing the second substrate from the sealing member.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the display includes i) a substrate, ii) a driving circuit formed on the substrate, iii) an organic light emitting diode formed on the substrate and electrically connected to the driving circuit, iv) an encapsulation thin film formed on the driving circuit and organic light emitting diode and v) a spacer formed on the substrate and surrounding the encapsulation thin film.

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

Abstract: Disclosed herein is a tape measure with a self-regulating speed control mechanism. In the present invention, when a bobbin rotates, a rubber roller rotatably provided on a movable mounting plate alternately comes into contact with an inner surface of a support ring and a rubber acceleration prevention member provided on the inner surface of the support ring, so that the speed of the bobbin can be smoothly and reliably reduced.

Abstract: Disclosed herein are a stature measuring method and a stature measuring device using the method. The method includes securing an anchoring unit, coupled to a main body via a tape, to a building wall, moving the main body to a bottom in a state in which the anchoring unit is secured to the building wall, inputting a reference point setting signal in a state in which the main body comes into contact with the bottom, and moving the main body from the bottom to a position above an examinee's head, and measuring a distance from a point where the reference point setting signal is input to a point where the main body is moved above the examinee's head, thus determining the examinee's stature.

Abstract: A foldable extension pipe is provided which consists of upper and lower pipe sections which are folded and unfolded. The operation input from the upper side is transmitted towards the lower side by means of the transmission rods of the upper and lower pipe sections being magnetic-coupled by first and second magnetic couplings. The measuring wheel unit and the spraying wheel unit having the foldable extension pipe are carried or stored with ease, and when a user inputs an operation via the upper portion of the extension pipe, particularly the operation input portion such as an operation lever at the grip portion of the upper portion, the operation output portion manipulates the reset switch of the counter, manipulates the nozzle section of the spray can for spraying paint, or brakes the rotary wheel.

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)??Formula 1 wherein, about 0.75?x/z?about 3.15, and about 0.55?y/z?about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)??Formula 1 wherein, about 0.75?x/z?about 3.15, and about 0.55?y/z?about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract: Provided are a light emitting device and a light emitting device package. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a first electrode on the first conductive type semiconductor layer, the first electrode being electrically connected to the first conductive type semiconductor layer; a plurality of reflective islands on the second conductive type semiconductor layer; a second electrode on the second conductive type semiconductor layer and the plurality of reflective islands, the second electrode being electrically connected to the second conductive type semiconductor layer; and a conductive support member on the second electrode.

Abstract: A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes.

Abstract: Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.