Abstract: A method of water absorption for a generator stator winding insulator using a cross capacitance involves detecting a state of the insulator of the stator winding of the generator using a theory of the cross capacitance, and carrying out the water absorption test of the insulator of the stator winding of the power generator using the detected state in the detecting.

Abstract: Apparatus and method of water absorption for generator stator winding insulator using a cross capacitance are disclosed. The apparatus includes a sensor using a cross capacitance, and a water absorption testing unit for carrying out the water absorption test of the insulator of the stator winding of the power generator using the sensor. The apparatus determines whether the insulator absorbs water, according to thickness, using the cross capacitance, such that inferior winding is detected, a power plant is prevented from being suddenly stopped, costs for the maintenance are reduced, and the lifespan of the power generator is extended.

Abstract: The methods for modeling a structure of a spider web using computer programming are disclosed. First method of modeling elliptical spider webs using computer programming includes inputting variables into computer program to model spider webs; number of radii, number of spirals, length of major and minor axes of hub, length of major and minor axes of outermost ellipse, and slope of major axis. It includes calculating the functions of each radius and ellipse based on the variables. It proceeds to calculating the intersections of each radius and ellipse by using the radial and ellipse functions. It ends in modeling spider webs by connecting the intersections of each radius to draw radii and by connecting the intersections of each elliptical spiral to draw spirals, based on the intersections. The other method of modeling spiral spider webs has similar process with the notable differences in input variables, in its use of spiral functions (parametric equations), etc.

Abstract: A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.

Abstract: Apparatus and method of water absorption for generator stator winding insulator using a cross capacitance are disclosed. The apparatus includes a sensor using a cross capacitance, and a water absorption testing unit for carrying out the water absorption test of the insulator of the stator winding of the power generator using the sensor. The apparatus determines whether the insulator absorbs water, according to thickness, using the cross capacitance, such that inferior winding is detected, a power plant is prevented from being suddenly stopped, costs for the maintenance are reduced, and the lifespan of the power generator is extended.

Abstract: A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.

Abstract: A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.

Abstract: A portrait displaying receptacle comprising a transparent covering and a base, wherein a portrait is affixed to the base with a plurality of fastening members and the transparent covering is affixed to the base over the portrait, thereby fully enclosing the portrait. The plurality of fastening members each comprises a main fastening member which is affixed to the base, a screw connected to the main fastening member, and a securing pad which holds the portrait in place.