Abstract: A refresh command is received from a memory controller. An interruptible refresh containing multiple segment refreshes is initiated. The segment refreshes are separated by interrupt boundaries. A command is received before execution of a segment refresh. The first command is executed and execution of the first segment refresh is delayed at a first interrupt boundary. Alternatively, a first number of segment refreshes to execute is received from a memory controller. The received first number of segment refreshes is executed. A second number of segment refreshes to execute is received from a memory controller. The received second number of segment refreshes is executed. No segment refreshes are executed between the execution of the first number of segment refreshes and the execution of the second number of segment refreshes.

Abstract: By arranging dies in a stack such that failed cores are aligned with adjacent good cores, fast connections between good cores and cache of failed cores can be implemented. Cache can be allocated according to a priority assigned to each good core, by latency between a requesting core and available cache, and/or by load on a core.

Abstract: A method and apparatus for operation of a memory module for storage of a data word is provided. The apparatus includes a memory module having a set of paired memory devices including a first memory device to store a first section of a data word and a second memory device to store a second section of the data word when used in failure free operation. The apparatus may further include a first logic module to perform a write operation by writing the first and second sections of the data word to both the first memory device and the second memory device upon the determination of certain types of failure. The determination may include that a failure exists in the word section storage of either the first or second memory devices but that no failures exist in equivalent locations of word section storage in the two memory devices.

Abstract: Exemplary embodiments of the present invention disclose a method and system for monitoring a first Error Correcting Code (ECC) device for failure and replacing the first ECC device with a second ECC device if the first ECC device begins to fail or fails. In a step, an exemplary embodiment detects that a specified number of correctable errors is exceeded. In another step, an exemplary embodiment detects the occurrence of an uncorrectable error. In another step, an exemplary embodiment performs a loopback test on an ECC device if a specified number of correctable errors is exceeded or if an uncorrectable error occurs. In another step, an exemplary embodiment replaces an ECC device that fails the loopback test with an ECC device that passes a loopback test.

Abstract: A method and apparatus for continued operation of a memory module, including a first and second memory device, when one of memory devices has failed. The method includes receiving a write operation request to write a data word, having first and second sections, by a first memory module. The memory module may have a first memory device and a second memory device, for respectively storing the first and second sections of the data word. A determination if one of the first and second memory devices is inoperable is made. If one of the first and second memory devices is inoperable, a write operation is performed by writing the first and second sections of the data word to the operable one of the first and second memory devices.

Abstract: Methods of requesting memory spaces and resources using a memory controller are provided. A particular method may include communicating, by a memory controller, a request to a computer program for a resource, and using the resource in response to an indication from the computer program that the resource is available. Another particular method may include communicating a request to a memory controller for at least one of a memory space of a memory or a second resource. The memory controller may be configured to communicate the request from the first resource to a computer program. Another particular method may also include using, by the first resource, at least one of the memory space or the second resource in response to an indication that the memory space or the second resource is available.

Abstract: A method, system and computer program product are provided for implementing command timing adjustments to alleviate Dynamic Random Access Memory (DRAM) failures in a computer system. A predefined DRAM failure is detected. Responsive to the detected failure, a set of timers is adjusted for controlling predetermined timings used to access the DRAM. Responsive to the failure being resolved by the adjusted set of timers, checking for a predetermined level of performance is performed.

Abstract: A method, computer-readable storage media, and a system are provided for managing a scrub. The method may include detecting a trigger for the scrub. The trigger may be based upon a metric of a memory unit. The method may further include scrubbing the memory unit based upon the detection of the trigger.

Abstract: A method and apparatus for continued operation of a memory module, including a first and second memory device, when one of memory devices has failed. The method includes receiving a write operation request to write a data word, having first and second sections, by a first memory module. The memory module may have a first memory device and a second memory device, for respectively storing the first and second sections of the data word. A determination if one of the first and second memory devices is inoperable is made. If one of the first and second memory devices is inoperable, a write operation is performed by writing the first and second sections of the data word to the operable one of the first and second memory devices.

Abstract: A method and apparatus for modifying a reference voltage between refreshes in a memory device are disclosed. The memory array may include a plurality of memory cells. The memory device may also include a sense amplifier. The sense amplifier may be configured to read data from the plurality of memory cells using a reference voltage. The memory device may also include a sense amplifier reference voltage modification circuit. The sense amplifier reference voltage modification circuit may be configured to detect a triggering event and modify the reference voltage in response to detecting a triggering event.

Abstract: A method and apparatus for refreshing a row of a memory device prior to a scheduled refresh. A memory array may include a plurality of memory cells. The memory array may be configured to be refreshed at a first refresh time interval. The memory device may also include an intermediate refresh circuit. The intermediate refresh circuit may be configured to detect a triggering event and request a refresh for a row of the memory array in response to detecting a triggering event.

Abstract: According to one embodiment of the present invention, a method for bank sparing in a 3D memory device that includes detecting, by a memory controller, a first error in the 3D memory device and detecting a second error in a first element in a first rank of the 3D memory device, wherein the first element in the first rank has an associated first chip select. The method also includes sending a command to the 3D memory device to set mode registers in a master logic portion of the 3D memory device that enable a second element to receive communications directed to the first element and wherein the second element is in a second rank of the 3D memory device, wherein the first element and second element are each either a bank or a bank group that comprise a plurality of chips.

Abstract: A method, system and computer program product are provided for implementing ECC (Error Correction Codes) redundancy using reconfigurable logic blocks in a computer system. When a fail is detected when reading from memory, it is determined if the incorrect data is in the data or the ECC component of the data. When incorrect data is found in the ECC component of the data, and an actionable threshold is not reached, a predetermined Reliability, Availability, and Serviceability (RAS) action is taken. When the actionable threshold is reached with incorrect data identified in the ECC component of the data, an analysis process is performed to determine if the ECC logic is faulty. When a fail in the ECC logic is detected, the identified ECC failed logic is replaced with a spare block of logic.

Abstract: According to one embodiment of the present invention, a method for operating a three dimensional (“3D”) memory device includes detecting, by a memory controller, a first error on the 3D memory device and detecting, by the memory controller, a second error in a first chip in a first rank of the 3D memory device, wherein the first chip has an associated first chip select. The method also includes powering up a second chip in a second rank, sending a command from the memory controller to the 3D memory device to replace the first chip in the first chip select with the second chip and correcting the first error using an error control code.

Abstract: A method and apparatus for continued operation of a memory module, including a first and second memory device, when one of memory devices has failed. The method includes receiving a write operation request to write a data word, having first and second sections, by a first memory module. The memory module may have a first memory device and a second memory device, for respectively storing the first and second sections of the data word. A determination if one of the first and second memory devices is inoperable is made. If one of the first and second memory devices is inoperable, a write operation is performed by writing the first and second sections of the data word to the operable one of the first and second memory devices.

Abstract: According to one embodiment, a method for error correction in a memory module having ranks is provided where each rank has memory devices. The method includes determining a first mark condition for a first rank of the memory module, the first mark condition based on one or more uncorrectable error occurring in a first memory device in the first rank, placing a first mark in the first memory device, determining a second mark condition for the first rank, the second mark condition based on one or more uncorrectable error occurring in a second memory device in the first rank, placing a second mark in a third memory device in a second rank of the memory module and configuring the first memory device to respond to commands directed to the second rank, wherein configuring the first memory device is based on placing of the first mark and the second mark.

Abstract: Exemplary embodiments of the present invention disclose a method and system for monitoring a first Error Correcting Code (ECC) device for failure and replacing the first ECC device with a second ECC device if the first ECC device begins to fail or fails. In a step, an exemplary embodiment detects that a specified number of correctable errors is exceeded. In another step, an exemplary embodiment detects the occurrence of an uncorrectable error. In another step, an exemplary embodiment performs a loopback test on an ECC device if a specified number of correctable errors is exceeded or if an uncorrectable error occurs. In another step, an exemplary embodiment replaces an ECC device that fails the loopback test with an ECC device that passes a loopback test.

Abstract: A computer determines a threshold signal voltage of a semiconductor device. The computer determines a first expected signal propagation time for a signal travelling through a first test path of the semiconductor device. The computer transmits a first signal through the first test path. The computer measures a signal voltage and signal propagation time of the first signal. The computer determines that the signal voltage of the first signal does not reach or exceed the threshold signal voltage within the first expected signal propagation time. The computer determines that the first test path contains a defect.

Abstract: An apparatus and method is provided for coupling additional memory to a plurality of processors. The method may include determining the memory requirements of the plurality of processors in a system, comparing the memory requirements of the plurality of processors to an available memory assigned to each of the plurality of processors, and selecting a processor from the plurality of processors that requires additional memory capacity. The apparatus may include a plurality of processors, where the plurality of processors is coupled to a logic element. In addition, the apparatus may include an additional memory coupled to the logic element, where the logic element is adapted to select a processor from the plurality of processors to couple with the additional memory.

Abstract: An apparatus and method is provided for coupling additional memory to a plurality of processors. The method may include determining the memory requirements of the plurality of processors in a system, comparing the memory requirements of the plurality of processors to an available memory assigned to each of the plurality of processors, and selecting a processor from the plurality of processors that requires additional memory capacity. The apparatus may include a plurality of processors, where the plurality of processors is coupled to a logic element. In addition, the apparatus may include an additional memory coupled to the logic element, where the logic element is adapted to select a processor from the plurality of processors to couple with the additional memory.