Abstract: A charge-coupled device (CCD) image sensor, which can be operated either in the interlace mode or in the non-interlace mode, includes in a substrate of a semiconductor material a plurality of photodetectors, such as photodiodes, arranged in an array of rows and columns. A separate CCD shift register in the substrate extends along each column of the photodectectors. First and second sets of conductive gates extend transversely across the CCD shift registers with each first gate extending across a portion of the photodetectors in each row and each of the second gates extending across the remaining portion of the photodetectors in each row. A transfer region extends across the substrate from a portion of each of the photodetectors to an adjacent CCD shift register. The transfer regions of alternate photodetectors in each column extends under the first gates of the photodetectors and the transfer regions of the other photodetectors in each column extends under the second gates of the respective photodetectors.

Abstract: An image sensor formed on a P-type substrate includes a plurality of pinned diode photodiodes, a CCD shift register and a separate buried transfer gate located between each of the photodiodes and the CCD shift register. The photodetectors are arranged in at least one line. The CCD shift register extends along the line of photodetectors. Each of the pinned diode photodetectors includes a first region of N-type conductivity in the substrate and a second region of P+ type conductivity in the first region and along the substrate surface. The CCD shift register includes a channel region of N-type conductivity in the substrate surface and two sets of conductive gates along the channel region and insulated from the substrate surface. Each transfer gate includes a transfer channel region of N-type conductivity in the substrate and extending along the substrate surface from the shift register channel region to the first region of its respective photodetector.

Abstract: A solid-state imager comprising a substrate of a semiconductor material of one conductivity type having a major surface. A plurality of photodetectors are in the substrate and are arranged in an array of rows and columns. A separate CCD shift register is in the substrate along each column of the photodetectors and between adjacent columns of the photodetectors. Each shift register includes gates which can be operated to selectively transfer charge carriers from the photoconductors in the column at one side thereof into the shift register. A separate drain is adjacent each photodetector and the shift register adjacent the other side of the column of photodetectors. An anti-blooming barrier is provided between each drain and its adjacent photodetector. An exposure control barrier is provided between each drain and the shift register at the opposite side of the column of photodetectors.

Abstract: An image sensor is disclosed which comprises an imaging region and horizontal shift registers which receive charge carriers generated in the imaging region and transfer them to an output circuit for processing. In order to facilitate the transfer of charge carriers out of the sensor and to provide an image sensor which has a simplified structure, dual horizontal transfer registers are used and transfer of charge carriers between the two registers is accomplished without a separate transfer gate electrode. Transfer regions are disposed between alternate storage regions of the registers such that charge carriers in one-half of the storage regions in one register can be transferred to storage regions in the other register. The two registers can then be clocked out in parallel to read out a single line.

Abstract: A solid-state image sensor is disclosed which comprises a pn photodiode formed in a P-type substrate. A charge-coupled device is disposed adjacent the photodiode for receiving signal carriers from the diode. A lateral-overflow drain is disposed adjacent the photodiode for receiving carriers from the photodiode. In order to provide a simplified image sensor, a virtual gate is formed between the photodiode and the drain to effect the flow of excess carriers from the photodiode.

Abstract: A solid-state image sensor comprises a plurality of photodetectors in a substrate of a semiconductor material at a major surface of the substrate and arranged in an array of rows and columns. A separate shift register, such as a CCD shift register, is in the substrate and extends along each column of the photodetectors. Transfer gates are provided to selectively transfer charge carriers from the photodetectors to their adjacent shift register. A separate drain region is provided in the substrate at the major surface adjacent each photodetector and between adjacent photodetectors in each column. A virtual barrier region is provided across an edge of each photodetector between the photodetector and its adjacent drain region.

Abstract: An image sensor is disclosed which comprises an imaging region and horizontal shift registers which receive charge carriers generated in the imaging region and transfer them to an output circuit for processing. In order to facilitate the transfer of charge carriers out of the sensor and to provide an image sensor which has a simplified structure, dual horizontal transfer registers are used and transfer of charge carriers between the two registers is accomplished without a separate transfer gate electrode.

Abstract: An integrated-circuit including two NMOS depletion mode transistors having parameters selected so that when the transistors are connected in accordance with the invention (see FIG. 1), the circuit in response to a variable input DC voltage produces a stable DC output voltage.