Abstract: A semiconductor device assembly includes a first semiconductor die, such as a logic device, with bond pads arranged in an array on an active surface thereof, and at least one second semiconductor die, such as a memory device or an ancillary or parallel logic device, with bond pads on an active surface thereof with active surfaces thereof facing each other. Corresponding bond pads of the first and at least one second semiconductor dice are connected to each other by way of conductive structures disposed therebetween. The package includes the assembly and a carrier, such as a carrier substrate or leads. The first semiconductor die is oriented over the carrier such that bond pads thereof that are exposed beyond the periphery of each second semiconductor die face the carrier and are electrically connected to corresponding contacts thereof.

Abstract: A plurality of semiconductor die is packaged into one component. The inventive design comprises devices which have been singularized, packaged and thoroughly tested for functionality and adherence to required specifications. A plurality of packaged devices is then received by a housing. The conductive leads of the packaged devices are electrically coupled with pads manufactured into the housing. These pads are connected to traces within the housing, which terminate externally to the housing. Input/output leads are then electrically coupled with the traces, or are coupled with the traces as the housing is manufactured. The input/output leads provide means for connecting the housing with the electronic device or system into which it is installed. A lid received by the housing hermetically seals the packaged die in the housing, and prevents moisture or other contaminants which may impede the proper functionality of the die from entering the housing.

Abstract: An improved integrated circuit package for providing built-in heating or cooling to a semiconductor chip is provided. The improved integrated circuit package provides increased operational bandwidth between different circuit devices, e.g. logic and memory chips. The improved integrated circuit package does not require changes in current CMOS processing techniques. The structure includes the use of a silicon interposer. The silicon interposer can consist of recycled rejected wafers from the front-end semiconductor processing. Micro-machined vias are formed through the silicon interposer. The micro-machined vias include electrical contacts which couple various integrated circuit devices located on the opposing surfaces of the silicon interposer. The packaging includes a Peltier element.

Abstract: An improved structure and method are provided for increasing the operational bandwidth between different circuit devices, e.g. logic and memory chips, without requiring changes in current CMOS processing techniques. The structure includes the use of a silicon interposer. The silicon interposer can consist of recycled rejected wafers from the front-end semiconductor processing. Micro-machined vias are formed through the silicon interposer. The micro-machined vias include electrical contacts which couple various intergrated circuit devices located on the opposing surfaces of the silicon interposer.

Abstract: A method for forming a semiconductor component comprises packaging a plurality of semiconductor die into one component. Present designs comprise multiple unpackaged die which have been probed, but not rigorously tested for complete functionality and adherence to required operating specifications. The yields of present designs of multi-chip modules (MCMs) are low and functional units are therefore costly. Unlike present designs incorporating multiple die, the inventive design comprises devices which have been singularized, packaged, and thoroughly tested for functionality and adherence to required specifications. A plurality of packaged devices are then received by a housing. The conductive leads of the packaged devices are electrically coupled with pads manufactured into the housing. These pads are enjoined with traces within the housing, which terminate externally to the housing. Input/output leads are then electrically coupled with the traces, or are coupled with the traces as the housing is manufactured.

Abstract: A device comprising a circuit, a lead having a first end connected to the circuit and having a second end, and a deformable structure connected to the second end of the lead. The invention may be embodied on a circuit board, so that the circuit board includes a substrate and a deformable structure connected to said substrate.

Abstract: A semiconductor wafer having dice that include circuitry that is placed into a mode when the circuitry receives an alternating signal having certain characteristics. The alternating signal may be supplied from a system controller through a probe, probe pad, and conductive path on the wafer. In a preferred embodiment, the conductive path simultaneously carries a VCC power signal and the alternating signal to the circuitry. However, the alternating signal may be carried on a conductive path different from the one carrying the VCC signal. A great deal of information may be conveyed through the alternating signal, making other signals unnecessary in controlling, testing, stressing, and repairing dice on the wafer. For example, clocking information may be conveyed through the alternating signal. The circuitry may be placed in different modes in response to different characteristics of the alternating signal. The alternating signal and a VCC power signal are received through a single contact on each die.

Abstract: A device comprising a circuit, a lead having a first end connected to the circuit and having a second end, and a deformable structure connected to the second end of the lead. The invention may be embodied on a circuit board, so that the circuit board includes a substrate and a deformable structure connected to said substrate. Also disclosed is a device comprising a circuit having an active side and a non-active side, a package enclosing the active side of the circuit and not enclosing a portion of the non-active side of the circuit, and a lead having a first end connected to the active side of the circuit via a lead-over-chip connection, and having a second end extending from the package. Also disclosed is a device comprising a circuit and a lead formed from a flexible conductor, with the lead having a first end connected to the circuit.

Abstract: Assemblies including semiconductor dice flip-chip connected to one another and packages including the assemblies. The assembly includes a first semiconductor die, such as a logic device, with bond pads arranged in an array on an active surface thereof. The assembly also includes at least one second semiconductor die, such as a memory device or an ancillary or parallel logic device, with bond pads on an active surface thereof. The at least one second semiconductor die is oriented with the active surface thereof facing the active surface of the first semiconductor die. The bond pads of the at least one second semiconductor die are connected to corresponding bond pads of the first semiconductor die by way of conductive structures, such as balls, bumps, columns, or pillars of conductive material, disposed therebetween. The package includes the assembly and a carrier, such as a carrier substrate or leads.

Abstract: Structures and methods for PLA capability on a DRAM chip according to a DRAM optimized process flow are provided by the present invention. These structures and methods include using MOSFET devices as re-programmable elements in memory address decode circuits in a DRAM integrated circuit. The structures and methods use the existing process sequence for MOSFET's in DRAM technology. An illustrative embodiment of the present invention includes a non-volatile, reprogrammable circuit switch. The circuit switch includes a metal oxide semiconductor field effect transistor (MOSFET) in a substrate. The MOSFET has a source region, a drain region, a channel region between the source and drain regions, and a gate separated from the channel region by a gate oxide.

Abstract: Disclosed is a device comprising a circuit having an active side and a non-active side, a package enclosing the active side of the circuit and not enclosing a portion of the non-active side of the circuit, and a lead having a first end connected to the active side of the circuit via a lead-over-chip connection, and having a second end extending from the package. Also disclosed is a device comprising a circuit and a lead formed from a flexible conductor, with the lead having a first end connected to the circuit.

Abstract: A device comprising a circuit, a lead having a first end connected to the circuit and having a second end, and a deformable structure connected to the second end of the lead. The invention may be embodied on a circuit board, so that the circuit board includes a substrate and a deformable structure connected to said substrate. Also disclosed is a device comprising a circuit having an active side and a non-active side, a package enclosing the active side of the circuit and not enclosing a portion of the non-active side of the circuit, and a lead having a first end connected to the active side of the circuit via a lead-over-chip connection, and having a second end extending from the package. Also disclosed is a device comprising a circuit and a lead formed from a flexible conductor, with the lead having a first end connected to the circuit.

Abstract: A semiconductor wafer having dice that include circuitry that is placed into a mode when the circuitry receives an alternating signal having certain characteristics. The alternating signal may be supplied from a system controller through a probe, probe pad, and conductive path on the wafer.

Abstract: Applications and methods for DRAM technology compatible non-volatile memory cells are presented. An example illustrating the applications and methods includes a circuit switch. The circuit switch has a non-volatile memory cell which a metal oxide semiconductor field effect transistor (MOSFET) formed in a semiconductor substrate, a capacitor, and a vertical electrical via coupling a bottom plate of the capacitor through an insulator layer to a gate of MOSFET. A wordline is coupled to a top plate of the capacitor in the non-volatile memory cell. A sourceline is coupled to a source region of the MOSFET in the non-volatile memory cell. A bit line is coupled to a drain region of the MOSFET in the non-volatile memory cell and coupled to a logic/select circuit.

Abstract: A circuit for isolating a short-circuited integrated circuit (IC) formed on the surface of a semiconductor wafer from other ICs formed on the wafer that are interconnected with the short-circuited IC includes control circuitry within the short-circuited IC for sensing the short circuit. The control circuitry may sense the short circuit in a variety of ways, including sensing excessive current drawn by the short-circuited IC, and sensing an abnormally low or high voltage within the short-circuited IC. Switching circuitry also within the short-circuited IC selectively isolates the short-circuited IC from the other ICs on the wafer in response to the control circuitry sensing the short circuit. As a result, if the wafer is under probe test, for example, testing can continue uninterrupted on the other ICs while the short-circuited IC is isolated.

Abstract: The present invention includes a programmable logic array having a first logic plane that receives a number of input signals. The first logic plane has a plurality of non-volatile memory cells arranged in rows and columns that are interconnected to provide a number of logical outputs. A number of non-volatile memory cells arranged in rows and columns of a second logic plane receive the outputs of the first logic plane and are interconnected to produce a number of logical outputs such that the programmable logic array implements a logical function. Each non-volatile memory cell includes a MOSFET. Each non-volatile memory cell includes a stacked capacitor formed according to a DRAM process. Each non-volatile memory cell includes an electrical contact that couples the stacked capacitor to a gate of the MOSFET. The present invention also includes methods for producing the Ics and arrays.

Abstract: The present invention includes a programmable logic array having a first logic plane that receives a number of input signals. The first logic plane has a plurality of non-volatile memory cells arranged in rows and columns that are interconnected to provide a number of logical outputs. A number of non-volatile memory cells arranged in rows and columns of a second logic plane receive the outputs of the first logic plane and are interconnected to produce a number of logical outputs such that the programmable logic array implements a logical function. Each non-volatile memory cell includes a MOSFET. Each non-volatile memory cell includes a stacked capacitor formed according to a DRAM process. Each non-volatile memory cell includes an electrical contact that couples the stacked capacitor to a gate of the MOSFET. The present invention also includes methods for producing the Ics and arrays.

Abstract: The present invention includes a programmable logic array having a first logic plane that receives a number of input signals. The first logic plane has a plurality of non-volatile memory cells arranged in rows and columns that are interconnected to provide a number of logical outputs. A number of non-volatile memory cells arranged in rows and columns of a second logic plane receive the outputs of the first logic plane and are interconnected to produce a number of logical outputs such that the programmable logic array implements a logical function. Each non-volatile memory cell includes a MOSFET. Each non-volatile memory cell includes a stacked capacitor formed according to a DRAM process. Each nonvolatile memory cell includes an electrical contact that couples the stacked capacitor to a gate of the MOSFET. The present invention also includes methods for producing the Ics and arrays.

Abstract: The present invention includes a programmable logic array having a first logic plane that receives a number of input signals. The first logic plane has a plurality of non-volatile memory cells arranged in rows and columns that are interconnected to provide a number of logical outputs. A number of non-volatile memory cells arranged in rows and columns of a second logic plane receive the outputs of the first logic plane and are interconnected to produce a number of logical outputs such that the programmable logic array implements a logical function. Each non-volatile memory cell includes a MOSFET. Each non-volatile memory cell includes a stacked capacitor formed according to a DRAM process. Each non-volatile memory cell includes an electrical contact that couples the stacked capacitor to a gate of the MOSFET. The present invention also includes methods for producing the Ics and arrays.

Abstract: An on-chip testing device separately locates must-repairs or preferred-repairs in a row direction and column direction of a memory array. A row counter and a column counter are operated to index the memory array in row-major order, and then in column-major order (or vice versa). A running total of the number of failures is kept for each row and column, when the running total equals or exceeds a predetermined value, the row or column is determined to be a must-repair or a preferred repair. Rows to be repaired are substituted with redundant memory rows and columns to be prepared are substituted with redundant memory columns.