Abstract: An x-ray apparatus comprises an x-ray source and an x-ray detector and there between a member that is configured to perturb x-ray photons incident thereon. The apparatus further comprises a first database of values representative of material type and material thicknesses, a second database of scatter radiation values indicative of material type and/or material thicknesses, a processor configured to perform an algorithm which compares the output signal of the x-ray detector with values in the first database and to output a most likely material and/or thickness from the first database; selects from the second database the scatter radiation associated with the material type and/or material thickness; and removes the scatter radiation from an output signal of the x-ray detector.

Abstract: A system includes an illumination source, a detector and a processor. The detector acquires spectral measurements of a sample under test under at least one varying condition. The processor processes the measurements to generate at least one spectral representation that includes Raman spectra and at least one spectral representation that includes non-Raman spectra.

Abstract: An x-ray X-ray imaging apparatus includes an x-ray detector (3) that is configured to convert incident x-ray wavelength photons directly into electronic signals, a position for a material under test (2), an x-ray source (1), and a structure (4) configured to perturb an x-ray energy spectrum, each lying on a common axis. The x-ray source (1) is arranged to direct an x-ray energy spectrum along the common axis to impinge upon the member, the structure (4) configured to perturb the x-ray energy spectrum, and positioned material under test (2). The structure (4) lies between the x-ray source (1) and the member to one side of the position for material under test (2) intersecting the common axis, and the structure (4) includes at least three adjacent regions, each region different to immediately adjacent regions and configured to perturb the x-ray energy spectrum differently.

Abstract: A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at % of a first metal, 5 to 90 at % of a second metal, and 5 to 90 at % of a metalloid, wherein the metalloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous conductive material.

Abstract: In some examples, a device includes a nano-scale oscillator that exhibits chaotic oscillation responsive to a control input to the nano-scale oscillator, where the control input including a tunable input parameter.

Abstract: A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.

Abstract: An x-ray detector apparatus includes at least one x-ray detector (3) having a position for a material under test (2), an x-ray source (1), and a plurality of structures (4) each configured to perturb an x-ray energy spectrum differently. The structures (4) may be placed in the path of the x-ray energy spectrum sequentially or concurrently. A plurality of x-ray detectors (3) may be formed into a linear array.

Abstract: According to an example, an apparatus may include an input line, an output line, and a memory cell connected between the input line and the output line. The memory cell may include a memristor connected in series with a selector. The apparatus may also include a shunt device connected to the input line, in which the shunt device is to divert a portion of current away from the memory cell in response to a voltage at the input line being greater than a threshold voltage.

Abstract: An x-ray/gamma ray imaging apparatus includes a pixilated x-ray/gamma ray detector (3) including a member configured to detect incident x-ray/gamma ray wavelength photons, a position for a body under test (2), an x-ray or gamma ray source (1), and a structure configured to perturb the energy spectrum (6), each lying on a common axis. The source is arranged to direct an x-ray gamma ray energy spectrum along the common axis to impinge upon a structure configured to perturb the x-ray energy spectrum and a positioned body/object under test. The structure and the position for the body under test lie between the source and the detector member, and the structure includes at least three adjacent regions, each region different to immediately adjacent regions and configured to perturb the x-ray energy spectrum differently. Detected photons are subject to a random noise reduction algorithm.

Abstract: Polarization selective surface enhanced Raman spectroscopy (SERS) includes a plurality of nanofingers arranged as a SERS multimer to exhibit a polarization-dependent plasmonic mode and one or both of a stimulus source and a Raman detector. The stimulus source is to illuminate the SERS multimer with a stimulus signal and the Raman detector is to detect a Raman scattering signal emitted by an analyte in a vicinity of the SERS multimer. One or both of the Raman scattering signal has a polarization state dictated by or associated with the polarization-dependent plasmonic mode and the stimulus signal has a polarization state corresponding to the polarization-dependent plasmonic mode.

Abstract: A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.

Abstract: In one example, a volatile selector is switched from a low conduction state to a first high conduction state with a first voltage level and then the first voltage level is removed to activate a relaxation time for the volatile selector. The relaxation time is defined as the time the first volatile selector transitions from the high conduction state back to the low conduction state. The volatile selector is switched with a second voltage level of opposite polarity to the first voltage level to significantly reduce the relaxation time of the volatile selector.

Abstract: A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.

Abstract: A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN; XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.

Abstract: One example includes a resistive random access memory (ReRAM) device. The device includes a set of electrodes to receive a voltage. The device also includes a memristor element to at least one of store and readout a memory state in response to a current that flows through the ReRAM device in response to the voltage. The device further includes a selector element having a dynamic current-density area with respect to the voltage.

Abstract: A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.

Abstract: A bicycle transport bag (1) comprising a bicycle supporting frame structure (10) and a covering (6), wherein the supporting frame structure (10) comprises frame elements which are arranged to be assembled in a first bicycle supporting configuration inside the covering (6). The frame elements are removable from the covering (6) and are arranged to be reassembled into a second different bicycle supporting configuration outside of the covering (6). In the second bicycle supporting configuration, the bicycle supporting frame structure (10) may take the form of a bicycle work stand.

Abstract: The present invention relates to a connection device for a pannier for a vehicle and a pannier having such a connection device. The connection device includes a pivotable support member having an attachment arrangement for attaching to the vehicle. The pivotable support member is adapted to be pivoted between an attachment position, in which the attachment arrangement is exposed for attachment to the vehicle, and a concealed position. The present invention provides a connection device having an attachment arrangement. The attachment arrangement can be displaced so as not to interfere with objects, e.g., getting snared or caught.

Abstract: A circuit component that exhibits a region of negative differential resistance includes: a first layer of material; and a second layer of material in contact with the first layer of material, the contact forming a first self-heating interface. The first self-heating interface is structured such that an electrical current flowing from the first layer of material to the second layer of material encounters an electrical impedance occurring at the first interface that is greater than any electrical impedance occurring in the first and second layers of material, wherein heating occurring at the first interface is dominated by Joule heating caused by the electrical impedance occurring at the first interface, and wherein the electrical impedance occurring at the first interface decreases with increasing temperature to induce a region of negative differential resistance.

Abstract: In some examples, a device includes a nano-scale oscillator that exhibits chaotic oscillation responsive to a control input to the nano-scale oscillator, where the control input including a tunable input parameter.