Abstract: An X-ray imaging apparatus is disclosed that includes an x-ray detector. The x-ray detector includes a member configured to convert incident x-ray wavelength photons into emitted visible wavelength photons, a position for a material under test, an x-ray source, and a structure configured to perturb an x-ray energy spectrum, each lying on a common axis. The x-ray source is arranged to direct an x-ray energy spectrum along the common axis to impinge upon the member, the structure configured to perturb the x-ray energy spectrum, and positioned material under test. The structure lies between the x-ray source and the member to one side of the position for material under test intersecting the common axis, and the structure includes at least three adjacent regions, each region different to immediately adjacent regions and configured to perturb the x-ray energy spectrum differently.

Abstract: Example implementations disclosed herein can be used to decode memory elements in a crosspoint array. In one example implementation, a drain voltage is applied to a drain terminal of a field effect transistor switch for a selected row in the crosspoint array associated with the selected memory element. A bulk terminal of the field effect transistor switch for the selected row can be biased with a well voltage that is independent of the drain, source, or substrate voltages. In such examples, the gate terminal of the field effect transistor switch for the selected row can be driven with a gate voltage comprising the drain voltage and the well voltage. The drain voltage, the well voltage, and the gate voltage are selected to cause the field effect transistor switch for the selected row to operate as an ohmic switch.

Abstract: A superlinear selector includes a first electrode, a second electrode, and an active layer coupled in series between the first electrode and the second electrode. The active layer includes a superlinear electrical conductor and an electrical insulator. One of the superlinear electrical conductor and the electrical insulator forms a matrix in which the other of the superlinear electrical conductor and the electrical insulator is dispersed.

Abstract: In one example, a volatile selector is switched from a low conduction state to a first high conduction state with a first voltage level and then the first voltage level is removed to activate a relaxation time for the volatile selector. The relaxation time is defined as the time the first volatile selector transitions from the high conduction state back to the low conduction state. The volatile selector is switched with a second voltage level of opposite polarity to the first voltage level to significantly reduce the relaxation time of the volatile selector.

Abstract: An integrated circuit is provided. In an example, the integrated circuit includes a first address line, a selector device electrically coupled to the first address lines, and a memory device electrically coupled between the selector device and a second address line. The selector device has a first I-V response in a first current direction and a second I-V response in a second current direction that is different from the first I-V response.

Abstract: Polarization selective surface enhanced Raman spectroscopy (SERS) includes a plurality of nanofingers arranged as a SERS multimer to exhibit a polarization-dependent plasmonic mode and one or both of a stimulus source and a Raman detector. The stimulus source is to illuminate the SERS multimer with a stimulus signal and the Raman detector is to detect a Raman scattering signal emitted by an analyte in a vicinity of the SERS multimer. One or both of the Raman scattering signal has a polarization state dictated by or associated with the polarization-dependent plasmonic mode and the stimulus signal has a polarization state corresponding to the polarization-dependent plasmonic mode.

Abstract: A charge trapping memristor is disclosed. An example charge trapping memristor includes a first electrode and second electrode configured on opposite sides of a channel to generate an electric potential across the channel, and a charge barrier. The example charge trapping memristor also includes a charge trapping material configured to store and release an electric charge therein, wherein storing and releasing the electric charge changes electrical properties of the channel.

Abstract: An x-ray apparatus comprises an x-ray source and an x-ray detector and there between a member that is configured to perturb x-ray photons incident thereon. The apparatus further comprises a first database of values representative of material type and material thicknesses, a second database of scatter radiation values indicative of material type and/or material thicknesses, a processor configured to perform an algorithm which compares the output signal of the x-ray detector with values in the first database and to output a most likely material and/or thickness from the first database; selects from the second database the scatter radiation associated with the material type and/or material thickness; and removes the scatter radiation from an output signal of the x-ray detector.

Abstract: According to an example, methods for forming three-dimensional (3-D) nano-particle assemblies include depositing SES elements onto respective tips of nano-fingers, in which the nano-fingers are arranged in sufficiently close proximities to each other to enable the tips of groups of adjacent ones of the nano-fingers to come into sufficiently close proximities to each other to enable the SES elements on the tips to be bonded together when the nano-fingers are partially collapsed. The methods also include causing the nano-fingers to partially collapse toward adjacent ones of the nano-fingers to cause a plurality of SES elements on respective groups of the nano-fingers to be in relatively close proximities to each other and form respective clusters of SES elements, introducing additional particles that are to attach onto the clusters of SES elements, and causing the clusters of SES elements to detach from the nano-fingers.

Abstract: A device includes a cross-point array and an access circuit to access subsets of memory elements respectively corresponding to encoded blocks of data. For each of the subsets of memory elements, a row or a column of the cross-point array that includes a first memory element in the subset and a second memory element in the subset further includes a third memory element that is between the first and second memory elements along the row or column and is in one of the subsets corresponding to another of the encoded blocks.

Abstract: A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at % of a first metal, 5 to 90 at % of a second metal, and 5 to 90 at % of a metalloid, wherein the metalloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous conductive material.

Abstract: A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode. The thermally-insulating cladding surrounds at least a portion of the memristor.

Abstract: According to an example, an apparatus may include an input line, an output line, and a memory cell connected between the input line and the output line. The memory cell may include a memristor connected in series with a selector. The apparatus may also include a shunt device connected to the input line, in which the shunt device is to divert a portion of current away from the memory cell in response to a voltage at the input line being greater than a threshold voltage.

Abstract: Polarization selective surface enhanced Raman spectroscopy (SERS) includes a plurality of nanofingers arranged as a SERS multimer to exhibit a polarization-dependent plasmonic mode and one or both of a stimulus source and a Raman detector. The stimulus source is to illuminate the SERS multimer with a stimulus signal and the Raman detector is to detect a Raman scattering signal emitted by an analyte in a vicinity of the SERS multimer. One or both of the Raman scattering signal has a polarization state dictated by or associated with the polarization-dependent plasmonic mode and the stimulus signal has a polarization state corresponding to the polarization-dependent plasmonic mode.

Abstract: A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.

Abstract: An X-ray imaging apparatus is disclosed that includes an x-ray detector. The x-ray detector includes a member configured to convert incident x-ray wavelength photons into emitted visible wavelength photons, a position for a material under test, an x-ray source, and a structure configured to perturb an x-ray energy spectrum, each lying on a common axis. The x-ray source is arranged to direct an x-ray energy spectrum along the common axis to impinge upon the member, the structure configured to perturb the x-ray energy spectrum, and positioned material under test. The structure lies between the x-ray source and the member to one side of the position for material under test intersecting the common axis, and the structure includes at least three adjacent regions, each region different to immediately adjacent regions and configured to perturb the x-ray energy spectrum differently.

Abstract: An implantable nanosensor includes a stent to be implanted inside a fluid conduit. The stent has a well in a surface of the stent. The implantable nanosensor further includes a nanoscale-patterned sensing substrate disposed in the well. The nanoscale-patterned sensing substrate is to produce an optical scattering response signal indicative of a presence of an analyte in a fluid carried by the fluid conduit when interrogated by an optical stimulus signal.

Abstract: According to an example, methods for forming three-dimensional (3-D) nano-particle assemblies include depositing SES elements onto respective tips of nano-fingers, in which the nano-fingers are arranged in sufficiently close proximities to each other to enable the tips of groups of adjacent ones of the nano-fingers to come into sufficiently close proximities to each other to enable the SES elements on the tips to be bonded together when the nano-fingers are partially collapsed. The methods also include causing the nano-fingers to partially collapse toward adjacent ones of the nano-fingers to cause a plurality of SES elements on respective groups of the nano-fingers to be in relatively close proximities to each other and form respective clusters of SES elements, introducing additional particles that are to attach onto the clusters of SES elements, and causing the clusters of SES elements to detach from the nano-fingers.

Abstract: X-ray imaging apparatus, which includes an x-ray detector. The x-ray detector comprises a member configured to convert incident x-ray wavelength photons into emitted visible wavelength photons, a position for a material under test, an x-ray source, and a structure configured to perturb an x-ray energy spectrum, each lying on a common axis. The x-ray source is arranged to direct an x-ray energy spectrum along the common axis to impinge upon the member, the structure configured to perturb the x-ray energy spectrum, and positioned material under test. The structure lies between the x-ray source and the member to one side of the position for material under test intersecting the common axis, and the said structure comprises at least three adjacent regions, each region different to immediately adjacent regions and configured to perturb the x-ray energy spectrum differently.

Abstract: A nonlinear dielectric stack circuit element includes a first layer of material having a first dielectric constant; a second layer of material having a second dielectric constant; and a third layer of material sandwiched between the first layer of material and the second layer of material and having a third dielectric constant. The third dielectric constant has a value less than the first dielectric constant and the second dielectric constant.