Abstract: The present disclosure provides a light detection and ranging (LIDAR) system, which comprises: a distance measuring unit configured to emit a plurality of first pulses towards an object located in a field of view (FOV), wherein the object is associated with one or more markers; and a detector configured to receive at least one second pulse from the one or more markers of the object, wherein each of the at least one second pulse indicates object information identifying the object.

Abstract: A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.

Abstract: A body front-end structure for a two-track vehicle, having an A-pillar from which an upper wheel well longitudinal member projects toward the front of the vehicle in the longitudinal direction of the vehicle, and from which a lower body longitudinal member that is offset toward the inside of the vehicle with respect to the upper wheel well longitudinal member projects toward the front of the vehicle in the longitudinal direction of the vehicle. In a head-on crash with small lateral overlap, a suspension strut dome is loaded with a crash force in the longitudinal direction of the vehicle. The body front-end structure has a sheet-metal tension strip that connects the suspension strut dome to the lower body longitudinal member in a force-transmitting manner. In the event of a head-on crash, the sheet-metal tension strip provides a load path through which a tensile force opposing the crash force acts on the suspension strut dome.

Abstract: A body front-end structure for a two-track vehicle, having an A-pillar from which an upper wheel well longitudinal member projects toward the front of the vehicle in the longitudinal direction of the vehicle, and from which a lower body longitudinal member that is offset toward the inside of the vehicle with respect to the upper wheel well longitudinal member projects toward the front of the vehicle in the longitudinal direction of the vehicle. In a head-on crash with small lateral overlap, a suspension strut dome is loaded with a crash force in the longitudinal direction of the vehicle. The body front-end structure has a sheet-metal tension strip that connects the suspension strut dome to the lower body longitudinal member in a force-transmitting manner. In the event of a head-on crash, the sheet-metal tension strip provides a load path through which a tensile force opposing the crash force acts on the suspension strut dome.

Abstract: A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.

Abstract: A semiconductor device includes a semiconductor substrate having a first dopant and a second dopant. A covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant. The semiconductor device further includes a semiconductor layer on the semiconductor substrate and semiconductor device elements in the semiconductor layer. A vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface.

Abstract: A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate having opposing first and second main surfaces and first and second dopants. A covalent atomic radius of a material of the substrate is i) larger than a covalent atomic radius of the first dopant and smaller than that of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than that of the second dopant. A vertical extension of the first dopant into the substrate from the first main surface ends at a bottom of a substrate portion at a first vertical distance to the first main surface. The method further includes forming a semiconductor layer on the first main surface, forming semiconductor device elements in the semiconductor layer, and reducing a thickness of the substrate by removing material from the second main surface at least up to the substrate portion.

Abstract: What are presented and described are a curing agent for silicone rubber compounds comprising a compound having the general structural formula R1mSi(R)4-m, a process for preparation thereof and the use of this curing agent for hardening a silicone rubber compound. The invention further relates to a composition comprising the curing agent for silicone rubber compounds and to the use of such a composition as sealant, adhesive or coating composition.

Abstract: A rail vehicle includes a coupling disposed centrally in a front region of the rail vehicle. The coupling is mounted in a transversely extended crossmember, so that forces acting on the coupling are introduced through the crossmember into abutments which are supported on a front side of a car body of the rail vehicle. The crossmember is connected through at least one elastic energy absorption configuration to one of the abutments.

Abstract: Techniques are disclosed for using machine-learning processing for generating resource-allocation specifications. A first data set may be received from a first data source. The first data set can include a first resource request and a first timestamp associated with entities. A second data set can be received from a second data source that includes communication data and allocation data associated with the entities. Target characteristics may be defined for training instances. The training instances can be used to train a machine-learning model using the first data set and the second data set. A third data set may be accessed and used to generate a user session within which, the trained machine-learning model may execute to generate a resource-allocation specification. The resource-allocation specification including a communication schedule. One or more communications compliant with the communication schedule may be output to an entity.

Abstract: A method for forming a semiconductor device includes incorporating recombination center atoms into a semiconductor substrate. The method further includes, after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate.

Abstract: A semiconductor device includes: a semiconductor body with an edge region arranged between an inner region and an edge surface; a first semiconductor region of a first doping type in the inner region; and a second semiconductor region of a second doping type in the inner and edge regions. An edge termination structure includes: a third semiconductor region in the edge region adjoining the first semiconductor region; a surface section of the second semiconductor region adjoining a first main surface of the semiconductor body; and an amorphous passivation layer having a specific resistance higher than 109 ?cm adjoining the third semiconductor region and the surface section. An electrically active doping dose of the third region at a lateral position spaced apart from the first region by 50% of a width of the edge termination structure is at least QBR/q, wherein QBR is breakdown charge and q is elementary charge.

Abstract: A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 1017/cm3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.

Abstract: Techniques are disclosed for using machine-learning processing for generating resource-allocation specifications. A first data set may be received from a first data source. The first data set can include a first resource request and a first timestamp associated with entities. A second data set can be received from a second data source that includes communication data and allocation data associated with the entities. Target characteristics may be defined for training instances. The training instances can be used to train a machine-learning model using the first data set and the second data set. A third data set may be accessed and used to generate a user session within which, the trained machine-learning model may execute to generate a resource-allocation specification. The resource-allocation specification including a communication schedule. One or more communications compliant with the communication schedule may be output to an entity.

Abstract: A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

Abstract: The present invention relates to processes for producing fiber cement products as well as to the fiber cement products obtainable therewith. More specifically, the present invention relates to fiber cement products that are suitable for being subjected to ink-jet printing, which fiber cement products at least comprise on their outer surface one or more cured layers of a first coating composition, which at least comprises a binder and a pigment and which is characterized by a pigment volume concentration of higher than about 40%. The invention further provides processes for producing such fiber cement products. Moreover, the present invention provides processes for producing ink-jet printed fiber cement products and ink jet printed fiber cement products obtainable therewith. The present invention further relates to various uses of these fiber cement products, in particular as building materials.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate having opposing first and second main surfaces and first and second dopants. A covalent atomic radius of a material of the substrate is i) larger than a covalent atomic radius of the first dopant and smaller than that of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than that of the second dopant. A vertical extension of the first dopant into the substrate from the first main surface ends at a bottom of a substrate portion at a first vertical distance to the first main surface. The method further includes forming a semiconductor layer on the first main surface, forming semiconductor device elements in the semiconductor layer, and reducing a thickness of the substrate by removing material from the second main surface at least up to the substrate portion.

Abstract: A method for manufacturing a high-voltage semiconductor device includes exposing a semiconductor substrate to a plasma to form a protective substance layer on the semiconductor substrate. A semiconductor device includes a semiconductor substrate and a protective substance layer on the semiconductor substrate.