Abstract: According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.

Abstract: The present invention relates to a catalyst for the cross-linking of silicone rubber materials. In particular, the present invention provides a composition for the production of a silicone rubber material, wherein the composition comprises a catalyst, which comprises at least two compounds, which are different from each other and which are selected independently of each other from metal salts of carboxylic acids. In addition, the present invention provides a use of the catalyst according to the invention for the cross-linking of a silicone rubber material, as well as a use of the composition according to the invention for the production of a silicone rubber material, especially for the use as a sealant, an adhesive, or a coating agent.

Abstract: A power semiconductor device has a semiconductor body having a first surface and a second surface that runs substantially parallel to the first surface. A first metallization is arranged on the first surface. A second metallization is arranged on the second surface. The semiconductor body includes an n-doped first semiconductor region spaced apart from the first metallization and having a first maximum doping concentration, an n-doped second semiconductor region having a second maximum doping concentration higher than the first maximum doping concentration and adjoining the first semiconductor region, and a third semiconductor region in ohmic contact with the second metallization, arranged between the second metallization and the second semiconductor region, and adjoining the second semiconductor region. The second semiconductor region is made of a semiconductor material which includes electrically active chalcogen impurities as donors.

Abstract: The present invention relates to a catalyst for the cross-linking of silicone rubber materials with a cross-linker on the basis of lactate. In particular, the present invention provides a composition for the production of a silicone rubber material with a cross-linker on the basis of lactate, wherein the composition comprises a catalyst, which comprises at least two compounds, which are different from each other and which are selected independently of each other from metal salts of carboxylic acids. In addition, the present invention provides a method for the production of such a composition, as well as a use of the catalyst for the cross-linking of a silicone rubber material, in particular for cross-linking a silicone rubber material with a cross-linker on the basis of lactate, as well as a use of the composition of the present invention for the production of a silicone rubber material, in particular for use as a sealant, an adhesive, or a coating agent.

Abstract: A fuse holder (10) for a high-voltage system for accommodating an electric fuse link (13), comprising a bottom part (11) and a cover (12), which, when assembled, form a housing that serves to accommodate a fuse link (13). The fuse link (13) has two opposite terminal lugs (131), which can be fixed in the cover by means of fastening screws (14), so that, together with the cover (12), the fuse link (13) forms a unit, which is fastened on the bottom part (11) by means of the fastening screws (14).

Abstract: A method for forming a semiconductor device includes incorporating chalcogen dopant atoms into a semiconductor doping region of a semiconductor substrate of a semiconductor device. The method further includes incorporating heavy metal atoms into the semiconductor doping region.

Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract: A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a diode-structure with a pn-junction, and an edge-termination structure arranged in a peripheral area of the semiconductor body. The edge-termination structure includes an insulating region partially arranged in the semiconductor body adjacent the pn-junction and a semi-insulating region arranged on the insulating region and spaced apart from the semiconductor body. The semi-insulating region forms a resistor connected in parallel with the diode-structure.

Abstract: A semiconductor device has a semiconductor body with a first side and a second side that is arranged distant from the first side in a first vertical direction. The semiconductor device has a rectifying junction, a field stop zone of a first conduction type, and a drift zone of a first conduction type arranged between the rectifying junction and the field stop zone. The semiconductor body has a net doping concentration along a line parallel to the first vertical direction. At least one of (a) and (b) applies: (a) the drift zone has, at a first depth, a charge centroid, wherein a distance between the rectifying junction and the charge centroid is less than 37% of the thickness the drift zone has in the first vertical direction; (b) the absolute value of the net doping concentration comprises, along the straight line and inside the drift zone, a local maximum value.

Abstract: A semiconductor device includes a single crystalline semiconductor body with a first surface and a second surface parallel to the first surface. The semiconductor body contains chalcogen atoms and a background doping of pnictogen and/or hydrogen atoms. A concentration of the chalcogen atoms is at least 1E12 cm?3. A ratio of the chalcogen atoms to the atoms of the background doping is in a range from 1:9 to 9:1.

Abstract: A semiconductor device has a semiconductor body with a first side and a second side that is arranged distant from the first side in a first vertical direction. The semiconductor device has a rectifying junction, a field stop zone of a first conduction type, and a drift zone of a first conduction type arranged between the rectifying junction and the field stop zone. The semiconductor body has a net doping concentration along a line parallel to the first vertical direction. At least one of (a) and (b) applies: (a) the drift zone has, at a first depth, a charge centroid, wherein a distance between the rectifying junction and the charge centroid is less than 37% of the thickness the drift zone has in the first vertical direction; (b) the absolute value of the net doping concentration comprises, along the straight line and inside the drift zone, a local maximum value.

Abstract: A semiconductor device includes a glass piece and an active semiconductor element formed in a single-crystalline semiconductor portion. The single-crystalline semiconductor portion has a working surface, a rear side surface opposite to the working surface and an edge surface connecting the working and rear side surfaces. The glass piece has a portion extending along and in direct contact with the edge surface of the single-crystalline semiconductor portion.

Abstract: A passenger table for connection to a side wall of a rail vehicle and for orientation in the transverse direction of the rail vehicle, includes a side wall pillar for connection to the side wall and a table panel supported by the side wall pillar. A horizontal support bar extends from the side wall pillar and, at a distance from the side wall pillar, is connected to the table panel by plastically deformable connection elements in such a manner that, when the plastically deformable connection elements are deformed, the support bar is movable in a horizontal plane relative to the table panel.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate having first and second sides, laterally spaced semiconductor devices integrated into the semiconductor substrate, and a drift region of a first conductivity type. Trenches are formed in the semiconductor substrate at the first side of the semiconductor substrate between laterally adjacent semiconductor devices, each of the trenches having two sidewalls and a bottom. First doping zones of a second conductivity type are formed in the semiconductor substrate at least along the sidewalls of the trenches. The first doping zones form pn-junctions with the drift region. Second doping zones of the first conductivity type are formed in the semiconductor substrate at least along a part of the bottom of the trenches. The second doping zones adjoin the drift region. The semiconductor substrate is cut along the second doping zones in the trenches to separate the semiconductor devices.

Abstract: A power semiconductor device includes a semiconductor body, having an active zone and a high voltage peripheral zone laterally adjacent to each other, the high voltage peripheral zone laterally surrounding the active zone. The device further includes a metallization layer on a front surface of the semiconductor body and connected to the active zone, a first barrier layer, comprising a high-melting metal or a high-melting alloy, between the active zone and the metallization layer, and a second barrier layer covering at least a part of the peripheral zone, the second barrier layer comprising an amorphous semi-isolating material. The first barrier layer and the second barrier layer partially overlap and form an overlap zone. The overlap zone extends over an entire circumference of the active zone. A method for producing such a power semiconductor device is also provided.

Abstract: A semiconductor device has a semiconductor body including opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor region formed in the semiconductor body, an edge region surrounding the active semiconductor region, a first semiconductor zone of a first conduction type formed in the edge region, an edge termination structure formed in the edge region at the top side, and a shielding structure arranged on that side of the edge termination structure facing away from the bottom side. The shielding structure has a number of N1?2 first segments and a number of N2?1 second segments. Each of the first segments is electrically connected to each of the other first segments and to each of the second segments, and each of the second segments has an electric resistivity higher than an electric resistivity of each of the first segments.

Abstract: A variable securing configuration for an interior equipment element on the body of a vehicle, particularly a passenger seat on the side wall of a rail vehicle, includes at least one body-side engagement device and a securing rail connected to the interior equipment element. In order to be able to produce such a securing configuration easily and cost-effectively, the body has recesses disposed at equal distances between one another in the longitudinal direction of the vehicle and at least one retention element of the engagement device engages with the recesses. The engagement device is connected to the securing rail in such a way that the securing rail with the interior equipment element is adjustable relative to the engagement device in the longitudinal direction of the vehicle by an adjustment path corresponding to at least the spacing between two successive recesses.

Abstract: A semiconductor device has a semiconductor body including opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor region formed in the semiconductor body, an edge region surrounding the active semiconductor region, a first semiconductor zone of a first conduction type formed in the edge region, an edge termination structure formed in the edge region at the top side, and a shielding structure arranged on that side of the edge termination structure facing away from the bottom side. The shielding structure has a number of N1?2 first segments and a number of N2?1 second segments. Each of the first segments is electrically connected to each of the other first segments and to each of the second segments, and each of the second segments has an electric resistivity higher than an electric resistivity of each of the first segments.

Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract: Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.