Abstract: The present invention relates to coated fiber cement products as well as to methods for manufacturing such products. In particular, the present invention provides processes for manufacturing coated fiber cement products, these processes comprising the IN steps of: (i) providing a cured fiber cement product having at least one surface; (ii) applying a primer to the at least one surface of the cured fiber cement product; (iii) providing at least one layer of a radiation curable composition to the at least one surface, which radiation curable composition comprises at least one pigment; and (iv) curing the layer of radiation curable composition by radiation. Finally, the present invention provides coated fiber cement products obtainable by such processes and uses of these fiber cement products as building materials.

Abstract: What are presented and described are a curing agent for silicone rubber compounds comprising a compound having the general structural formula R1mSi(R)4-m, a process for preparation thereof and the use of this curing agent for hardening a silicone rubber compound. The invention further relates to a composition comprising the curing agent for silicone rubber compounds and to the use of such a composition as sealant, adhesive or coating composition.

Abstract: A method for forming a semiconductor device includes incorporating recombination center atoms into a semiconductor substrate. The method further includes, after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate.

Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.

Abstract: A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 1017/cm3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.

Abstract: A method for forming a semiconductor device includes incorporating chalcogen dopant atoms into a semiconductor doping region of a semiconductor substrate of a semiconductor device. The method further includes incorporating heavy metal atoms into the semiconductor doping region.

Abstract: A variable securing configuration for an interior equipment element on the body of a vehicle, particularly a passenger seat on the side wall of a rail vehicle, includes at least one body-side engagement device and a securing rail connected to the interior equipment element. In order to be able to produce such a securing configuration easily and cost-effectively, the body has recesses disposed at equal distances between one another in the longitudinal direction of the vehicle and at least one retention element of the engagement device engages with the recesses. The engagement device is connected to the securing rail in such a way that the securing rail with the interior equipment element is adjustable relative to the engagement device in the longitudinal direction of the vehicle by an adjustment path corresponding to at least the spacing between two successive recesses.

Abstract: A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.

Abstract: A fuse holder (10) for a high-voltage system for accommodating an electric fuse link (13), comprising a bottom part (11) and a cover (12), which, when assembled, form a housing that serves to accommodate a fuse link (13). The fuse link (13) has two opposite terminal lugs (131), which can be fixed in the cover by means of fastening screws (14), so that, together with the cover (12), the fuse link (13) forms a unit, which is fastened on the bottom part (11) by means of the fastening screws (14).

Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.

Abstract: A semiconductor device is provide that includes: a semiconductor body having a first surface, an inner region, and an edge region; a pn junction between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the pn-junction extending in a lateral direction of the semiconductor body in the inner region; a recess extending from the first surface in the edge region into the semiconductor body, the recess comprising at least one sidewall; a dielectric filling the recess. In the dielectric, a dielectric number, in the lateral direction, decreases as a distance from the first sidewall increases.

Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.

Abstract: According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.

Abstract: The present invention relates to processes for producing fiber cement products as well as to the fiber cement products obtainable therewith. More specifically, the present invention relates to fiber cement products that are suitable for being subjected to ink-jet printing, which fiber cement products at least comprise on their outer surface one or more cured layers of a first coating composition, which at least comprises a binder and a pigment and which is characterized by a pigment volume concentration of higher than about 40%. The invention further provides processes for producing such fiber cement products. Moreover, the present invention provides processes for producing ink-jet printed fiber cement products and ink jet printed fiber cement products obtainable therewith. The present invention further relates to various uses of these fiber cement products, in particular as building materials.

Abstract: A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.

Abstract: A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.

Abstract: A rail vehicle includes a coupling disposed centrally in a front region of the rail vehicle. The coupling is mounted in a transversely extended crossmember, so that forces acting on the coupling are introduced through the crossmember into abutments which are supported on a front side of a car body of the rail vehicle. The crossmember is connected through at least one elastic energy absorption configuration to one of the abutments.

Abstract: A semiconductor device is provide that includes: a semiconductor body having a first surface, an inner region, and an edge region; a pn junction between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the pn-junction extending in a lateral direction of the semiconductor body in the inner region; a recess extending from the first surface in the edge region into the semiconductor body, the recess comprising at least one sidewall; a dielectric filling the recess. In the dielectric, a dielectric number, in the lateral direction, decreases as a distance from the first sidewall increases.

Abstract: A semiconductor device includes a glass piece and an active semiconductor element formed in a single-crystalline semiconductor portion. The single-crystalline semiconductor portion has a working surface, a rear side surface opposite to the working surface and an edge surface connecting the working and rear side surfaces. The glass piece has a portion extending along and in direct contact with the edge surface of the single-crystalline semiconductor portion.

Abstract: A passenger table for connection to a side wall of a rail vehicle and for orientation in the transverse direction of the rail vehicle, includes a side wall pillar for connection to the side wall and a table panel supported by the side wall pillar. A horizontal support bar extends from the side wall pillar and, at a distance from the side wall pillar, is connected to the table panel by plastically deformable connection elements in such a manner that, when the plastically deformable connection elements are deformed, the support bar is movable in a horizontal plane relative to the table panel.