Abstract: The present invention relates to a catalyst for the cross-linking of silicone rubber materials. In particular, the present invention provides a composition for the production of a silicone rubber material, wherein the composition comprises a catalyst, which comprises at least two compounds, which are different from each other and which are selected independently of each other from metal salts of carboxylic acids. In addition, the present invention provides a use of the catalyst according to the invention for the cross-linking of a silicone rubber material, as well as a use of the composition according to the invention for the production of a silicone rubber material, especially for the use as a sealant, an adhesive, or a coating agent.

Abstract: The present invention relates to a catalyst for the cross-linking of silicone rubber materials with a cross-linker on the basis of lactate. In particular, the present invention provides a composition for the production of a silicone rubber material with a cross-linker on the basis of lactate, wherein the composition comprises a catalyst, which comprises at least two compounds, which are different from each other and which are selected independently of each other from metal salts of carboxylic acids. In addition, the present invention provides a method for the production of such a composition, as well as a use of the catalyst for the cross-linking of a silicone rubber material, in particular for cross-linking a silicone rubber material with a cross-linker on the basis of lactate, as well as a use of the composition of the present invention for the production of a silicone rubber material, in particular for use as a sealant, an adhesive, or a coating agent.

Abstract: A semiconductor device includes a single crystalline semiconductor body with a first surface and a second surface parallel to the first surface. The semiconductor body contains chalcogen atoms and a background doping of pnictogen and/or hydrogen atoms. A concentration of the chalcogen atoms is at least 1E12 cm?3. A ratio of the chalcogen atoms to the atoms of the background doping is in a range from 1:9 to 9:1.

Abstract: A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls.

Abstract: A method includes implanting recombination center atoms via a first surface into a semiconductor body and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor body having a first semiconductor material and a second semiconductor material having a band gap larger than a band gap of the first semiconductor material. A first pn-junction is formed in the first semiconductor material. A second pn-junction is formed by the second semiconductor material and extends deeper into the semiconductor body than the first pn-junction. The second semiconductor material is in contact with the first semiconductor material and forms part of an edge termination zone of the semiconductor device.

Abstract: A power semiconductor device includes a semiconductor substrate, an active device region disposed in the semiconductor substrate, an edge termination region spaced laterally outward from the active device region in the semiconductor substrate, and first and second trenches. The first trench is disposed in the edge termination region and has an inner sidewall, an outer sidewall and a bottom, the inner sidewall being spaced closer to the active device region than the outer sidewall. The second trench is spaced laterally outward from the first trench in the edge termination region, and extends further into the semiconductor substrate than the first trench and has a sidewall which outwardly faces the outer sidewall of the first trench and is doped opposite as the inner sidewall and bottom of the first trench.

Abstract: Chalcogen atoms are implanted into a single crystalline semiconductor substrate. At a density of interstitial oxygen of at least 5E16 cm?3 thermal donors containing oxygen are generated at crystal defects in the semiconductor substrate. Then the semiconductor substrate is heated up to a temperature above a deactivation temperature at which the thermal donors become inactive, wherein a portion of electrically active chalcogen atoms is increased.

Abstract: A semiconductor substrate includes a first side and a second side opposite the first side. A semiconductor material extends between the first and second sides and is devoid of active device regions. The semiconductor material has a first region and a second region. The first region extends from the first side to a depth into the semiconductor material and includes chalcogen dopant atoms which provide a base doping concentration for the first region. The second region extends from the first region to the second side and is devoid of base doping. Further, a power semiconductor component is provided.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate having first and second sides, laterally spaced semiconductor devices integrated into the semiconductor substrate, and a drift region of a first conductivity type. Trenches are formed in the semiconductor substrate at the first side of the semiconductor substrate between laterally adjacent semiconductor devices, each of the trenches having two sidewalls and a bottom. First doping zones of a second conductivity type are formed in the semiconductor substrate at least along the sidewalls of the trenches. The first doping zones form pn-junctions with the drift region. Second doping zones of the first conductivity type are formed in the semiconductor substrate at least along a part of the bottom of the trenches. The second doping zones adjoin the drift region. The semiconductor substrate is cut along the second doping zones in the trenches to separate the semiconductor devices.

Abstract: A power semiconductor device has a semiconductor body having a first surface and a second surface that runs substantially parallel to the first surface. A first metallization is arranged on the first surface. A second metallization is arranged on the second surface. The semiconductor body includes an n-doped first semiconductor region spaced apart from the first metallization and having a first maximum doping concentration, an n-doped second semiconductor region having a second maximum doping concentration higher than the first maximum doping concentration and adjoining the first semiconductor region, and a third semiconductor region in ohmic contact with the second metallization, arranged between the second metallization and the second semiconductor region, and adjoining the second semiconductor region. The second semiconductor region is made of a semiconductor material which includes electrically active chalcogen impurities as donors.

Abstract: A semiconductor body has a first side, second side, lateral edge, active area, edge termination between the active area and the lateral edge, and drift region of a first conductivity type. The edge termination includes a step formed in the semiconductor body between the first side and the lateral edge. The step includes a lateral surface extending up to the first side and a bottom surface extending up to the lateral edge. A first doping zone of a second conductivity type is formed in the semiconductor body along the lateral surface of the step and forms a pn-junction with the drift region. A second doping zone of the first conductivity type is formed in the semiconductor body at least along a part of the bottom surface of the step and extends up to the lateral edge, wherein the second doping zone is in contact with the drift region.

Abstract: Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.

Abstract: A traction head part includes a cabin which has a floor region, a roof and two side walls which extend between the floor region and the roof. The side walls each have an A-pillar on the head end thereof which is held on the floor region. One longitudinal member extends into the side walls from each A-pillar. The unit formed of the A-pillar and the longitudinal members is constructed to absorb and direct forces into the cabin in the case of a crash.

Abstract: Embodiments of the present invention exploit redundancy of succeeding FFT spectra and use this redundancy for computing interpolated temporal supporting points. An analysis filter bank converts overlapped sequences of an audio (ex. loudspeaker) signal from a time domain to a frequency domain to obtain a time series of short-time loudspeaker spectra. An interpolator temporally interpolates this time series. The interpolation is fed to an echo canceller, which computes an estimated echo spectrum. A microphone analysis filter bank converts overlapped sequences of an audio microphone signal from the time domain to the frequency domain to obtain a time series of short-time microphone spectra. The estimated echo spectrum is subtracted from the microphone spectrum. Further signal enhancement (filtration) may be applied. A synthesis filter bank converts the filtered microphone spectra to the time domain to generate an echo compensated audio microphone signal.

Abstract: A railway vehicle has a cover for a front coupling of the railway vehicle. The cover is formed of at least one displaceable front hatch that can be displaced by a drive between an opened and a closed end position. A displacement of the at least one front hatch is guided such that the displacement takes place along a circular segment path about a rotary axis.

Abstract: The invention provides a method for estimating a fundamental frequency of a speech signal comprising the steps of receiving a signal spectrum of the speech signal, filtering the signal spectrum to obtain a refined signal spectrum, determining a cross-power spectral density using the refined signal spectrum and the signal spectrum, transforming the cross-power spectral density into the time domain to obtain a cross-correlation function, and estimating the fundamental frequency of the speech signal based on the cross-correlation function.

Abstract: Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.

Abstract: An integrated circuit having a semiconductor component arrangement and production method is provided. The integrated circuit includes a semiconductor material region having a surface region and being laterally subdivided into a central region and into an edge region. The integrated circuit includes a passivation layer region, an oxide layer, and a VLD zone. The passivation layer region is formed on the surface region in the edge region and is configured to realize a field distribution at the edge of the semiconductor component arrangement. The oxide layer region is provided as a protection against oxidation on and in direct contact with the surface region of the semiconductor material region in the edge region. The oxide layer region or a part of the oxide layer region is formed in direct contact with a channel stopper region formed in the edge region.