Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.

Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Abstract: According to one embodiment, a memory system includes first, second, and third ICs. The first IC includes a non-volatile semiconductor memory. The second IC includes a controller configured to control the non-volatile semiconductor memory. The third IC is configured to receive an external first power supply voltage and generate a second power supply voltage. The third IC is connected to the second IC via an interface according to a serial communication standard. A temperature sensor element is connected to the third IC.

Abstract: The object of the present invention is to provide the gelatinous, molten salt having a high ion-conductivity and an excellent heat resistance. The object of the present invention can be solved by the inorganic nanofibers having a functional group which inter-molecularly interacts with the molten salt on the surface thereof, and the molten salt composition comprising molten salt; or the method for increasing a viscosity of liquid molten salt characterized in that the inorganic nanofibers having a functional group which inter-molecularly interacts with the molten salt in the surface thereof is added to the liquid molten salt.

Abstract: According to one embodiment, a memory system includes first, second, and third ICs. The first IC includes a non-volatile semiconductor memory. The second IC includes a controller configured to control the non-volatile semiconductor memory. The third IC is configured to receive an external first power supply voltage and generate a second power supply voltage. The third IC is connected to the second IC via an interface according to a serial communication standard. A temperature sensor element is connected to the third IC.

Abstract: The present invention provides a magnesium secondary cell comprising a positive electrode, a negative electrode releasing magnesium ions, and a nonaqueous electrolyte. The nonaqueous electrolyte comprises a solvent and a magnesium sulfonamide salt represented by formula (I) below, Mg[X1—SO2—N—SO2—X2]2??(I) wherein X1 and X2 are identical or different and each represents CpF2p+1, or X1 and X2 are taken together to represent CqF2q, wherein p is 0, 1, 2, or 3, and q is 2, 3, or 4. The solvent is a mixed solvent comprising a sulfone-based solvent and an ether- or thioether-based solvent, or the solvent is a solvent comprising a sulfone moiety and an ether or thioether moiety.

Abstract: A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to supply the first power to the output portion, the power supply circuit generating second power and third power from the first power, a semiconductor memory which receives the second power from the output portion, and a controller which receives the third power from the output portion and controls the semiconductor memory. The power supply circuit turns off the switch and stops supply of power to the semiconductor memory and the controller when the second power exceeds a first value or when the third power exceeds a second value.

Abstract: The object of the present invention is to provide the gelatinous, molten salt having a high ion-conductivity and an excellent heat resistance. The object of the present invention can be solved by the inorganic nanofibers having a functional group which inter-molecularly interacts with the molten salt on the surface thereof, and the molten salt composition comprising molten salt; or the method for increasing a viscosity of liquid molten salt characterized in that the inorganic nanofibers having a functional group which inter-molecularly interacts with the molten salt in the surface thereof is added to the liquid molten salt.

Abstract: A semiconductor device includes a connector configured for connection to a host, a power circuit supplied with a first voltage from the host via the connector, the power circuit including first and second channels configured to generate second and third voltages, respectively, from the first voltage, a semiconductor memory supplied with the second voltage via the first channel, and a controller for the semiconductor memory, supplied with the third voltage via the second channel. When the first voltage is less than a first threshold, the power circuit turns off the first channel and the second channel.

Abstract: A semiconductor device includes a connector configured for connection to a host, a power circuit supplied with a first voltage from the host via the connector, the power circuit including first and second channels configured to generate second and third voltages, respectively, from the first voltage, a semiconductor memory supplied with the second voltage via the first channel, and a controller for the semiconductor memory, supplied with the third voltage via the second channel. When the first voltage is less than a first threshold, the power circuit turns off the first channel and the second channel.

Abstract: A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to supply the first power to the output portion, the power supply circuit generating second power and third power from the first power, a semiconductor memory which receives the second power from the output portion, and a controller which receives the third power from the output portion and controls the semiconductor memory. The power supply circuit turns off the switch and stops supply of power to the semiconductor memory and the controller when the second power exceeds a first value or when the third power exceeds a second value.

Abstract: An omnidirectional camera system includes an omnidirectional camera that acquires an omnidirectional image by capturing using a fish-eye lens and an image processing device which displays the plurality of partial images which are cut out from the omnidirectional image side by side on one screen, in which the omnidirectional camera performs luminance adjustment with respect to the omnidirectional image, and the image processing device performs gradation adjustment processing in each partial image with respect to the plurality of partial images.

Abstract: A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to supply the first power to the output portion, the power supply circuit generating second power and third power from the first power, a semiconductor memory which receives the second power from the output portion, and a controller which receives the third power from the output portion and controls the semiconductor memory. The power supply circuit turns off the switch and stops supply of power to the semiconductor memory and the controller when the second power exceeds a first value or when the third power exceeds a second value.

Abstract: The present invention relates to a phosphor represented by the Formula [1]: MaSrbCacAldSieNf, wherein the phosphor includes phosphor particles in which single crystallites are three-dimensionally coupled to each other, the phosphor particles include a crystal grain boundary triple point, and [a total number of the crystal grain boundary triple points (A)]/[the number of the phosphor particles (B)] is 1.0 or less.

Abstract: A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to supply the first power to the output portion, the power supply circuit generating second power and third power from the first power, a semiconductor memory which receives the second power from the output portion, and a controller which receives the third power from the output portion and controls the semiconductor memory. The power supply circuit turns off the switch and stops supply of power to the semiconductor memory and the controller when the second power exceeds a first value or when the third power exceeds a second value.

Abstract: This invention provides a non-aqueous electrolyte magnesium secondary battery comprising a positive electrode, a negative electrode, a separator, and a non-aqueous electrolyte, the non-aqueous electrolyte comprising [N(SO2CF3)2]? as an anion, and Mg2+ and/or an organic onium cation as a cation.

Abstract: The present invention provides an ionic liquid or plastic crystal comprising an anion and a cation, the anion comprising [C(SO2F)3]?, and the cation comprising at least one member selected from the group consisting of 1-ethyl-3-methylimidazolium ([EMI]+), N,N-diethyl-N-methyl-(2-methoxyethyl)ammonium ([DEME]+), N-methyl-N-propylpyrrolidinium ([Py13]+), N-methyl-N-propylpiperidinium ([PP13]+), tetramethylammonium ([N1111]+), tetraethylammonium ([N2222]+), trimethylhexylammonium ([N6111]+), triethylhexylammonium ([N6222]+), N-methyl-ethylpyrrolidinium ([Py12]+), 1-butyl-3-methylimidazolium ([C4mim]+), and 1-hexyl-3-methylimidazolium ([C6mim]+).

Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Abstract: The invention provides a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a method for manufacturing an M-plane GaN substrate by forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonothermal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Abstract: The present invention relates to a phosphor represented by the Formula [1]: MaSrbCacAldSieNf, wherein the phosphor includes phosphor particles in which single crystallites are three-dimensionally coupled to each other, the phosphor particles include a crystal grain boundary triple point, and [a total number of the crystal grain boundary triple points (A)]/[the number of the phosphor particles (B)] is 1.0 or less.