Patents by Inventor Hajime Matsumoto

Hajime Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9639291
    Abstract: According to one embodiment, there is provided a memory system including a non-volatile memory, a controller, a first interface circuit, a first signal line, and a second signal line. The controller is configured to control the non-volatile memory. The first interface circuit is configured to perform level conversion between a first power source level and a second power source level which is lower than the first power source level. The second power source level is used as a driving voltage of the controller. The first signal line is configured to connect to the first interface circuit. The second signal line is configured to connect the first interface circuit and a signal terminal of the controller. A potential of the second signal line is able to be pulled up to the second power source level.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: May 2, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Hajime Matsumoto
  • Publication number: 20160344932
    Abstract: An omnidirectional camera system includes an omnidirectional camera that acquires an omnidirectional image by capturing using a fish-eye lens and an image processing device which displays the plurality of partial images which are cut out from the omnidirectional image side by side on one screen, in which the omnidirectional camera performs luminance adjustment with respect to the omnidirectional image, and the image processing device performs gradation adjustment processing in each partial image with respect to the plurality of partial images.
    Type: Application
    Filed: May 5, 2016
    Publication date: November 24, 2016
    Inventors: Hajime MATSUMOTO, Takamasa YOKOYAMA
  • Patent number: 9502241
    Abstract: Provided is a high-quality Group III nitride crystal of excellent processability. A Group III nitride crystal is produced by forming a film is composed of an oxide, hydroxide and/or oxyhydroxide containing a Group III element by heat-treating a Group III nitride single crystal at 1000° C. or above, and removing the film.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: November 22, 2016
    Assignee: MITSUSBISHI CHEMICAL CORPORATION
    Inventors: Hajime Matsumoto, Kunitada Suzaki, Kenji Fujito, Satoru Nagao
  • Patent number: 9460813
    Abstract: According to one embodiment, there is provided a memory system that is connected to a host apparatus. The memory system includes a transmitting port and a controller. The transmitting port transmits a transmission signal to the host apparatus. The controller includes a first output interface that is connected to the transmitting port and a second output interface that is connected to the transmitting port. The memory system is configured such that a drivability of an output from the first output interface is larger than a drivability of an output from the second output interface in a first mode.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: October 4, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Daisuke Hashimoto, Toyokazu Eguchi, Hajime Matsumoto, Daisuke Ide
  • Publication number: 20160070502
    Abstract: According to one embodiment, there is provided a memory system including a non-volatile memory, a controller, a first interface circuit, a first signal line, and a second signal line. The controller is configured to control the non-volatile memory. The first interface circuit is configured to perform level conversion between a first power source level and a second power source level which is lower than the first power source level. The second power source level is used as a driving voltage of the controller. The first signal line is configured to connect to the first interface circuit. The second signal line is configured to connect the first interface circuit and a signal terminal of the controller. A potential of the second signal line is able to be pulled up to the second power source level.
    Type: Application
    Filed: March 3, 2015
    Publication date: March 10, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Hajime MATSUMOTO
  • Publication number: 20150311068
    Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.
    Type: Application
    Filed: June 16, 2015
    Publication date: October 29, 2015
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Yusuke TSUKADA, Shuichi KUBO, Kazunori KAMADA, Hideo FUJISAWA, Tatsuhiro OHATA, Hirotaka IKEDA, Hajime MATSUMOTO, Yutaka MIKAWA
  • Publication number: 20140281154
    Abstract: According to one embodiment, there is provided a memory system that is connected to a host apparatus. The memory system includes a transmitting port and a controller. The transmitting port transmits a transmission signal to the host apparatus. The controller includes a first output interface that is connected to the transmitting port and a second output interface that is connected to the transmitting port. The memory system is configured such that a drivability of an output from the first output interface is larger than a drivability of an output from the second output interface in a first mode.
    Type: Application
    Filed: July 2, 2013
    Publication date: September 18, 2014
    Inventors: Daisuke Hashimoto, Toyokazu Eguchi, Hajime Matsumoto, Daisuke Ide
  • Patent number: 8765296
    Abstract: Disclosed is an ionic liquid having a low melting point, a low viscosity, and high electrical conductivity. Specifically disclosed is an anion represented by [CF3OCF2CF2BF3]? for use in the production of such ionic liquids.
    Type: Grant
    Filed: May 1, 2009
    Date of Patent: July 1, 2014
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Hajime Matsumoto, Naohiro Terasawa, Seiji Tsuzuki
  • Publication number: 20140035103
    Abstract: Provided is a high-quality Group III nitride crystal of excellent processability. A Group III nitride crystal is produced by forming a film is composed of an oxide, hydroxide and/or oxyhydroxide containing a Group III element by heat-treating a Group III nitride single crystal at 1000° C. or above, and removing the film.
    Type: Application
    Filed: October 15, 2013
    Publication date: February 6, 2014
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Hajime MATSUMOTO, Kunitada SUZAKI, Kenji FUJITO, Satoru NAGAO
  • Patent number: 8387632
    Abstract: A camera apparatus (1) includes: a CCD (2) serving as an imaging device; a cleaning member (3) for performing cleaning of the front face of the CCD (2); and a cleaning controller (13) for controlling the movement of the cleaning member (3). Cleaning control is carried out so that when the cleaning of the CCD (2) is started, the cleaning member (3) is moved to a cleaning position located in front of and in proximity to the CCD (2), and when the cleaning of the CCD (2) is finished, the cleaning member (3) is moved to a retracted position retracted from the cleaning position. The camera apparatus itself is provided with the function of cleaning the imaging device, thereby enabling reduction in time and effort for a cleaning operation performed on the imaging device.
    Type: Grant
    Filed: June 11, 2008
    Date of Patent: March 5, 2013
    Assignee: Panasonic Corporation
    Inventors: Kazumasa Saito, Hajime Matsumoto, Tetsurou Kajino, Haruo Kogane, Jyouji Wada
  • Patent number: 8258344
    Abstract: The present invention relates to a conductor having high conductivity and electrochemical stability, which is in a solid state over a practically wide temperature range. Specifically disclosed is a plastic crystal containing a compound represented by Formula (I) or (IA) below: and at least one compound [BF3(CF3)] salt represented by Formula (II): Mn+[BF3(CF3)?]n??(II) wherein M is an alkaline metal, alkaline earth metal, aluminum or H; and when M is an alkaline metal or H, n is 1; when M is an alkaline earth metal, n is 2; and when M is aluminum, n is 3.
    Type: Grant
    Filed: December 26, 2007
    Date of Patent: September 4, 2012
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Hajime Matsumoto, Zhi-Bin Zhou
  • Patent number: 8247117
    Abstract: The present invention relates to ionic liquids having low melting points, low viscosities and high electrical conductivities; and more specifically, to ionic liquids including at least one organic onium ion and at least one anion represented by the formula: [Z—BF3]?, wherein Z is an alkyl group, an alkenyl group, or a fluoroalkenyl group. The ionic liquids according to the invention are capable of easily dissolving electrolytes such as lithium salts, and are also nonflammable and have low viscosities; therefore, the ionic liquids are suitable for use as electrolyte solvents for lithium batteries such as lithium secondary batteries, electric double-layer capacitors, and the like. The ionic liquids according to the invention are suitable for use in electrochemical devices such as lithium secondary batteries, fuel cells, solar batteries, electrical double-layer capacitors and the like; as solvents for chemical reactions; and as lubricants.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: August 21, 2012
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Hajime Matsumoto, Zhi-Bin Zhou
  • Publication number: 20110091769
    Abstract: Disclosed is an ionic liquid having a low melting point, a low viscosity, and high electrical conductivity. Specifically disclosed is an anion represented by [CF3OCF2CF2BF3]? for use in the production of such ionic liquids.
    Type: Application
    Filed: May 1, 2009
    Publication date: April 21, 2011
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Hajime Matsumoto, Naohiro Terasawa, Seiji Tsuzuki
  • Patent number: 7923142
    Abstract: There are provided a novel onium salt and a method for optimizing the interface of a negative electrode by the use of the novel onium salt and/or a conventional onium salt. Such a method is characterized in that an electrolyte comprising novel 2,2,2-trifluoro-N-(trifluoromethanesulfonyl)acetamide•tetraethyl ammonium salt is made to intervene between a negative electrode and a positive electrode in an electrochemical device having the constitution: a negative electrode|an electrolyte|a positive electrode, thereby constructing an electrode structure in the electrochemical device, and applying a voltage between the negative electrode and the positive electrode so as for the negative electrode to have a potential of ?1 V to ?5 V in terms of the potential relative to a reference electrode of I?/I3?, thereby forming a passive-state layer comprising a decomposition product of the above electrolyte or salt on the surface of the above negative electrode.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: April 12, 2011
    Assignees: Tokuyama Corporation, National Institute of Advanced Industrial Science and Technology
    Inventors: Tomonori Matsunaga, Takeo Kawahara, Hajime Matsumoto
  • Publication number: 20110070486
    Abstract: An object of the invention is to provide an ionic liquid having a low viscosity and low melting point, and having a high electrical conductivity and thermal stability. The ionic liquid comprises fluorosulfonyl(trifluoromethylsulfonylamide) (FTA) as an anion and a cation selected from N1111, N1112, N1113, N1122, N1133, N2221, N1224, DEME, N2222, N3333, N4444, N5555, AS44, DMI, PMI, BMI, Py11, Py12, Py14, PP11, PP12, PP13, PP14, P2222, and PS44.
    Type: Application
    Filed: May 1, 2009
    Publication date: March 24, 2011
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Hajime Matsumoto, Naohiro Terasawa, Hikari Sakaebe, Seiji Tsuzuki
  • Publication number: 20110026214
    Abstract: According to one embodiment, a storage device includes a multilayer wiring board; an internal circuit formed to include a memory device mounted on the multilayer wiring board; a plurality of connector terminals formed on the multilayer wiring board and used for connection to an external apparatus; and a plurality of connector pads formed on the multilayer wiring board and configured to connect wires in the internal circuit and the connector terminals, a connector pad for signals among the connector pads including a micro-strip line including a signal conductor pattern conductor on a surface layer and an internal layer ground conductor. The micro-strip line is formed by patterning a plurality of internal layer ground conductors such that the internal layer ground conductor is set as a target of the signal conductor pattern conductor on the surface layer.
    Type: Application
    Filed: July 23, 2010
    Publication date: February 3, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hajime MATSUMOTO, Toshihiro Tsujimura
  • Patent number: 7858799
    Abstract: An ionic organic compound having a repeating unit of formula (I) can be synthesized easily from a readily available organic compound through a small number of reaction steps, can be produced without any purification technique such as chromatography, and can be used in a quite small amount for gelation of water or an ionic liquid without any other auxiliary solvent: [-(A-B-C)n-]•m(X)??(I) wherein A represents a group having a quaternary ammonium cation which is formed from a heterocyclic compound having at least one nitrogen atom; B represents a functional group, which may have a substituent, selected from amide, urea, urethane and peptide groups; C represents a divalent hydrocarbon group, which may have a substituent, capable of linking between A and B; X represents an anion; n represents the number of repeating units; m represents the total number of anions; and n and m are the same integer.
    Type: Grant
    Filed: January 30, 2006
    Date of Patent: December 28, 2010
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Masaru Yoshida, Nagatoshi Koumura, Nobuyuki Tamaoki, Hajime Kawanami, Hajime Matsumoto, Said Kazaoui, Nobutsugu Minami
  • Patent number: 7846576
    Abstract: There are provided a novel onium salt and a method for optimizing the interface of a negative electrode by the use of the novel onium salt and/or a conventional onium salt. Such a method is characterized in that an electrolyte comprising novel 2,2,2-trifluoro-N-(trifluoromethanesulfonyl)acetamide.tetraethyl ammonium salt is made to intervene between a negative electrode and a positive electrode in an electrochemical device having the constitution: a negative electrode| an electrolyte| a positive electrode, thereby constructing an electrode structure in the electrochemical device, and applying a voltage between the negative electrode and the positive electrode so as for the negative electrode to have a potential of ?1 V to ?5 V in terms of the potential relative to a reference electrode of I?/I3?, thereby forming a passive-state layer comprising a decomposition product of the above electrolyte or salt on the surface of the above negative electrode.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: December 7, 2010
    Assignees: Tokuyama Corporation, National Institute of Advanced Industrial Science and Technology
    Inventors: Tomonori Matsunaga, Takeo Kawahara, Hajime Matsumoto
  • Publication number: 20100212689
    Abstract: A camera apparatus (1) includes: a CCD (2) serving as an imaging device; a cleaning member (3) for performing cleaning of the front face of the CCD (2); and a cleaning controller (13) for controlling the movement of the cleaning member (3). Cleaning control is carried out so that when the cleaning of the CCD (2) is started, the cleaning member (3) is moved to a cleaning position located in front of and in proximity to the CCD (2), and when the cleaning of the CCD (2) is finished, the cleaning member (3) is moved to a retracted position retracted from the cleaning position. The camera apparatus itself is provided with the function of cleaning the imaging device, thereby enabling reduction in time and effort for a cleaning operation performed on the imaging device.
    Type: Application
    Filed: June 11, 2008
    Publication date: August 26, 2010
    Applicant: PANASONIC CORPORATION
    Inventors: Kazumasa Saito, Hajime Matsumoto, Tetsurou Kajino, Haruo Kogane, Jyouji Wada
  • Patent number: 7732635
    Abstract: The utilization amount of steam generated by heat recovery tends to decrease in a production process of an organic acid when the concentration of an organic acid solution obtained in a step of collecting an organic acid with a solvent such as water becomes high. The purpose of the invention is to find an advantageous method for effectively utilizing reaction heat and contribute to global environmental preservation and saving product costs. The present invention provides a production method of an organic acid comprising carrying out a gas-phase catalytic oxidation reaction of raw material gas at the temperature from 250° C. to 450° C.
    Type: Grant
    Filed: April 6, 2007
    Date of Patent: June 8, 2010
    Assignee: Nippon Shokubai Co., Ltd.
    Inventor: Hajime Matsumoto