Abstract: Provided is a light-emitting panel comprising a substrate, a plurality of light-emitting device, and a reflection sheet, wherein the plurality of light-emitting devices and the reflection sheet are disposed on the same side of the substrate, the reflection sheet comprises a plurality of first through-holes, which are in one-to-one correspondence with the plurality of light-emitting devices, and the reflection sheet at an edge of the plurality of first through-holes is configured to wrap around an edge of the plurality of light-emitting device, and a gap between an edge of the plurality of first through-holes and an edge adjacent to the plurality of light-emitting devices is less than 0.1 mm, so that a distance between the edge of the plurality of first through holes and the edge of the plurality of light-emitting devices is reduced, and the size and width of the windowed area are reduced.

Abstract: The present application relates to the technical field of solar cells, and in particular, to a method for preparing a tunnel oxide layer and an amorphous silicon thin film and a TOPCon cell. The method includes sequentially depositing a tunnel oxide layer, an intrinsic amorphous silicon thin film and a doped amorphous silicon thin film at a deposition temperature of 440° C. to 460° C. by using a PECVD device. A flow rate of silane of depositing the intrinsic amorphous silicon thin film and the doped amorphous silicon thin film is in a range of 2000 sccm to 2500 sccm.

Abstract: A tunnel oxide layer, an N-type bifacial crystalline silicon solar cell and a method for manufacturing the same are provided. The method for manufacturing the tunnel oxide layer includes forming excess -OH on a back side of a silicon wafer, and depositing the tunnel oxide layer on the back side of the silicon wafer by a Plasma Enhanced Atomic Layer Deposition method. The method for manufacturing the N-type bifacial crystalline silicon solar cell can include following steps: performing cleaning, texturing, boron diffusing, and alkaline polishing on an N-type silicon wafer, sequentially forming a P-type doped layer, a passivation layer, and an anti-reflection layer on a front side of the alkaline-polished N-type silicon wafer, and forming a tunnel oxide layer on a back side of the alkaline-polished N-type silicon wafer, followed by forming an N-type doped polysilicon layer, and after annealing, forming an anti-reflection layer.

Abstract: A combined catalytic viscosity reducing system includes a catalyst slug, a heat generating system slug, a gas injection slug, and a water-soluble viscosity reducing system slug. The catalyst slug includes 10%-15% of azacarbene iron, 15%-30% of tert-butyl hydroperoxide, 2%-5% of phosphoric acid, 2%-5% of hydrogen donor, and 0.5%-1% of emulsifier agent, and the others are solvent. The heat generating system slug includes 10%-30% of NaNO2, 8%-25% of NH4Cl, and 3%-10% of acid initiator, and the others are water, totaling 100%. The water-soluble viscosity reducing system slug, according to mass percentage, includes 0.2%-0.5% of surfactant and 2%-10% of alkali, and the others are water. The combined catalytic viscosity reducing system can effectively reduce viscosity without injecting steam, and the viscosity reduction rate can reach 96.5%.

Abstract: Disclosed are a life prediction method of a rotary multi-component system and a related apparatus.

Abstract: The present disclosure provides a power semiconductor device and a manufacturing method thereof. In order to provide a power semiconductor device with improved latch-up immunity but without increasing device power loss and costs, a hole current path in a fourth semiconductor region of a first conductivity type between a gate trench and a dummy gate trench is shortened by providing a first contact trench between two adjacent gate trenches, and providing a second contact trench between the gate trench and a dummy gate trench such that the width and depth of the second contact trench are respectively greater than those of the first contact trench. The effect of the hole current on the potential rise of the fourth semiconductor region of the first conductivity type is suppressed, thereby suppressing the latch-up effect, and enhancing the switching reliability.

Abstract: A stroboscopic stepped illumination defect detection system for appearance defect detection of a product is provided. The system includes an image extraction unit, a brightness adjustment unit, a data processing unit, and a stroboscopic control unit. The image extraction unit is connected to the stroboscopic control unit and used for obtaining stable and clear images in various transmission/reflection visual bright fields/dark fields; and the brightness adjustment unit is connected to the stroboscopic control unit and used for setting various transmission/reflection visual bright fields/dark fields and converting in the various transmission/reflection visual bright fields/dark fields.

Abstract: A crystal-pulling method for pulling monocrystalline silicon, wherein the crystal-pulling method comprises that a furnace pressure of a monocrystal furnace in an equal-diameter stage of growth of a crystal does not exceed 18 Torr, a flow rate of argon gas introduced into the monocrystal furnace is kept in a constant range, and the monocrystalline silicon is doped with a dopant, so as to achieve equal-diameter crystal pulling under a low furnace pressure. By means of the process, the axial resistivity degradation slope of the monocrystal doped with the volatile dopant, especially gallium, can be reduced, and the length thereof with effective resistivity can be increased.

Abstract: The disclosure provides a battery pack. The battery pack includes a battery pack box body and a plurality of cells, wherein the battery pack box body has an accommodation space, the plurality of cells are stacked in the accommodation space, and each cell of the plurality of cells has a safety valve, a positive electrode terminal and a negative electrode terminal, the positive electrode terminal and the negative electrode terminal are located on a first surface of the cell, and the safety valve is located on a second surface of the cell; the battery pack box body further includes an accommodation pipeline and a cooling mechanism, wherein the accommodation pipeline and the cooling mechanism are both located in the accommodation space, the cooling mechanism is configured for supporting the second surface and cooling the cell, the accommodation pipeline is configured for accommodating molten substance collected by the accommodation holes.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: Disclosed in embodiments of the present application is a method for displaying information in an application. A provider creates flowable information to be displayed by means of a data standard provided by a sharing platform, and provides same to the sharing platform. When one party (a display party) is to present information of another party (a provider party), the display party sends a display request to the sharing platform, the display request comprising an identifier of information to be displayed. Upon receiving the display request, the sharing platform acquires the information to be displayed according to the identifier in the display request, so that the display party can display the information to be displayed.

Abstract: A vehicle-mounted controller includes: a GNSS module, an MPU and an MCU. The GNSS module transmits a pulse signal to the MPU via the rigid line and transmits recommended positioning information to the MPU via the serial port line at the moment when a change occurs in high and low levels of the pulse signal; the MPU determines first absolute time according to first reception time when the pulse signal is received, second reception time when the recommended positioning information is received, and the recommended positioning information, and broadcasts the first absolute time to Ethernet network for absolute time synchronization; the MCU determines second absolute time according to time when the pulse signal is received, time when the first absolute time is received, and the recommended positioning information, and broadcasts the second absolute time to a CAN bus for absolute time synchronization.

Abstract: A support on the cleaning device includes trays; a water outlet channel is formed on each tray; a height difference is formed between two sides of the water outlet channel, such that when flowing in a direction from high to low, a fluid m the tray and used for cleaning can cross the water outlet channel and is kept from flowing out through the water outlet channel, and when the fluid in the tray flows in a direction from low to high, the fluid can flow out through the water outlet channel. The height difference formed between the two sides of the water outlet channel is used to combine cleaning and scraping of the cleaning device by the tray with discharging of the fluid; the cleaning device is scraped clean by a high end formed by the height difference.

Abstract: A display panel is provided, including a grounding signal wiring, driving chips, a driving chip input output signal wiring, and a power line. A grounding signal pin is connected to the grounding signal wiring. The driving chip input output signal wiring is configured to connect a stage-transfer signal input pin and a stage-transfer signal output pin of two adjacent driving chips. The grounding signal wiring, the driving chip input output signal wiring, and the power line are disposed in a same layer and do not intersect with each other.

Abstract: A method for adjusting a resonant cavity includes: acquiring a construction parameter of a coplanar waveguide; determining, based on the construction parameter, an equivalent inductance of the coplanar waveguide, in which the equivalent inductance is a superposition of geometric inductance and kinetic inductance, and the equivalent inductance represents current density distribution on a metal surface of the coplanar waveguide; determining, based on the equivalent inductance, a resonance frequency of the resonant cavity formed by the coplanar waveguide, in which the resonance frequency is an analytical function with the construction parameter of the coplanar waveguide as a variable; and adjusting the resonance frequency of the resonant cavity to a target resonance frequency by adjusting a value of the construction parameter of the coplanar waveguide.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: A method for preparing the double-sided composite thinning zoom concave lens, includes steps of: S1: establishing the a front surface mathematical model and a back surface mathematical model in an optical software; S2: establishing an evaluation function comprising an optimized value of astigmatism and an edge thickness of the lens; and S3: inputting a structural parameters of the lens blank and the prescription power, optimizing one by one using the least square method according to the evaluation function to obtain data of a front surface and a rear surface of the lens.

Abstract: An optical sensing device includes a first sensor, a second sensor, a third sensor and a fourth sensor for sensing light to generate a first sensing signal, a second sensing signal, a third sensing signal and a fourth sensing signal, respectively. A spectrum of a coating of the first sensor includes a first peak of a X spectrum. A spectrum of a coating of the second sensor includes a second peak of the X spectrum. A spectrum of a coating of the third sensor includes a Y spectrum. A spectrum of a coating of the fourth sensor includes a Z spectrum. The first sensing signal and the second sensing signal are used to determine a X output value. The third sensing signal and the fourth sensing signal are used to determine a Y output value and a Z output value, respectively.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.