Abstract: A method for preparing the double-sided composite thinning zoom concave lens, includes steps of: S1: establishing the a front surface mathematical model and a back surface mathematical model in an optical software; S2: establishing an evaluation function comprising an optimized value of astigmatism and an edge thickness of the lens; and S3: inputting a structural parameters of the lens blank and the prescription power, optimizing one by one using the least square method according to the evaluation function to obtain data of a front surface and a rear surface of the lens.

Abstract: An optical sensing device includes a first sensor, a second sensor, a third sensor and a fourth sensor for sensing light to generate a first sensing signal, a second sensing signal, a third sensing signal and a fourth sensing signal, respectively. A spectrum of a coating of the first sensor includes a first peak of a X spectrum. A spectrum of a coating of the second sensor includes a second peak of the X spectrum. A spectrum of a coating of the third sensor includes a Y spectrum. A spectrum of a coating of the fourth sensor includes a Z spectrum. The first sensing signal and the second sensing signal are used to determine a X output value. The third sensing signal and the fourth sensing signal are used to determine a Y output value and a Z output value, respectively.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: A sunk-type package structure includes a substrate, an optical sensing chip, and a housing. The substrate has a cavity with a first depth. The optical sensing chip is disposed inside the cavity and electrically connected with the substrate. A surface of the optical sensing chip has a first sensing area for sensing light. The housing covers the substrate and the optical sensing chip. The housing has a light-permeable portion disposed above the first sensing area.

Abstract: A heat exchanging device includes: an inner wall and an outer wall, wherein the inner wall is close to the center axis of the heat exchanging device. The inner wall and the outer wall together form a chamber for a cooling medium to flow. The inner wall is provided with at least one protrusion component having an internal cavity. The protruding direction of the protrusion component faces the center axis. The internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall. The protruding direction of the protrusion component faces the crystal bar, and the internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall, which increases the heat exchanging area, and reduces the horizontal distance between the cooling medium and the crystal bar.

Abstract: A soft-bodied apparatus and a method for opening an eyelid are provided. The apparatus includes: a head support module, a real-time eyelid positioning module, a robot end-effector real-time positioning module, and an automatic eyelid opening operation module. The automatic eyelid opening operation module includes a robot body and a robot control system. The robot body is provided with a multi-axis rigid body mechanical arm and a soft-bodied end-effector. The robot control system takes the real-time poses of the upper and lower eyelids of the user as a motion target, and takes the real-time shape and the pose of the soft-bodied end-effector as feedback information to control motion of the robot body to automatically open the eyelid.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: The present disclosure provides a superconducting qubit. The superconducting qubit includes: a Josephson junction and a non-Josephson junction area, wherein the non-Josephson junction area includes a first layer of superconducting material, the first layer of superconducting material being superconducting material deposited on the non-Josephson junction area before ion milling on the Josephson junction and the non-Josephson junction area during preparation of the superconducting qubit.

Abstract: A method for preparing the double-sided composite thinning zoom concave lens, includes steps of: S1: establishing the a front surface mathematical model and a back surface mathematical model in an optical software; S2: establishing an evaluation function comprising an optimized value of astigmatism and an edge thickness of the lens; and S3: inputting a structural parameters of the lens blank and the prescription power, optimizing one by one using the least square method according to the evaluation function to obtain data of a front surface and a rear surface of the lens.

Abstract: A semiconductor structure is provided and includes a substrate; a gate dielectric layer on the substrate; a dielectric barrier layer structure on the gate dielectric layer; a work function layer on the dielectric barrier layer structure; a gate barrier layer structure on the work function layer; and a gate electrode layer on the gate barrier layer structure. The dielectric barrier layer structure is doped with silicon and the gate barrier layer structure is doped with silicon.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: A system and method for determining clearance between a fabrication tool and a workpiece is provided. In an exemplary embodiment, the method includes receiving a substrate within a tool such that a gap is defined there between. A transducer disposed on a bottom surface of the substrate opposite the gap provides an acoustic signal that is conducted through the substrate. The transducer also receives a first echo from a top surface of the substrate that defines the gap and a second echo from a bottom surface of the tool that further defines the gap. A width of the gap is measured based on the first echo and the second echo. In some embodiments, the bottom surface of the tool is a bottom surface of a nozzle, and the nozzle provides a liquid or a gas in the gap while the transducer is receiving the first and second echoes.

Abstract: A three-dimensional convertor includes a housing and a socket interior arranged inside the housing. The socket interior includes clapboards, a live wire plug bush conductive sheet, a naught wire plug bush conductive sheet and an earth wire plug bush conductive sheet. The clapboards include a first clapboard, a second clapboard, a third clapboard and a fourth clapboard which are sequentially stacked. The naught wire plug bush conductive sheet is located between the first clapboard and the second clapboard, the earth wire plug bush conductive sheet is located between the second clapboard and the third clapboard, the live wire plug bush conductive sheet is located between the third clapboard and the fourth clapboard. The housing includes at least two jack surfaces each of which is provided with a jack. The jack is corresponding to the live wire plug bush conductive sheet, the naught wire plug bush conductive sheet and the earth wire plug bush conductive sheet.

Abstract: A semiconductor structure is provided and includes a substrate; a gate dielectric layer on the substrate; a dielectric barrier layer structure on the gate dielectric layer; a work function layer on the dielectric barrier layer structure; a gate barrier layer structure on the work function layer; and a gate electrode layer on the gate barrier layer structure. The dielectric barrier layer structure is doped with silicon and the gate barrier layer structure is doped with silicon.

Abstract: A semiconductor device includes a semiconductor substrate, a first SiGe semiconductor fin on the semiconductor substrate, and a dielectric layer on the semiconductor substrate and side surfaces of the first SiGe semiconductor fin. The first SiGe semiconductor fin has a Ge content that gradually changes from bottom to top. The dielectric layer has an upper surface lower than an upper surface of the first SiGe semiconductor fin.